Following a significant number of graphene studies, other two‐dimensional (2D) layered materials have attracted more and interest for their unique structures distinct physical properties, which has opened window realizing novel electronic or optoelectronic devices. Here, we present comprehensive review on the applications 2D‐layered semiconductors as photodetectors, including photoconductors, phototransistors, photodiodes, reported in past five years. The device designs, mechanisms,...

Abstract Due to its significant applications in many relevant fields, light detection the solar‐blind deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances preparing high‐quality ultrawide‐bandgap (UWBG) semiconductors have enabled realization various high‐performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue circumventing numerous disadvantages traditional detectors....

Abstract Palladium diselenide (PdSe 2 ), a thus far scarcely studied group‐10 transition metal dichalcogenide has exhibited promising potential in future optoelectronic and electronic devices due to unique structures electrical properties. Here, the controllable synthesis of wafer‐scale homogeneous 2D PdSe film is reported by simple selenization approach. By choosing different thickness precursor Pd layer, with 1.2–20 nm can be readily synthesized. Interestingly, increase thickness, obvious...

Abstract Group‐10 layered transitional metal dichalcogenides including PtS 2 , PtSe and PtTe are excellent potential candidates for optoelectronic devices due to their unique properties such as high carrier mobility, tunable bandgap, stability, flexibility. Large‐area platinum diselenide (PtSe ) with semiconducting characteristics is far scarcely investigated. Here, the development of a high‐performance photodetector based on vertically aligned ‐GaAs heterojunction which exhibits broadband...

We report on the simple fabrication of monolayer graphene (MLG)/germanium (Ge) heterojunction for infrared (IR) light sensing. It is found that as-fabricated Schottky junction detector exhibits obvious photovoltaic characteristics, and sensitive to IR with high Ilight/Idark ratio 2 × 10(4) at zero bias voltage. The responsivity detectivity are as 51.8 mA W(-1) 1.38 10(10) cm Hz(1/2) W(-1), respectively. Further photoresponse study reveals displays excellent spectral selectivity peak...

Organolead halide perovskites have emerged as the most promising materials for various optoelectronic devices, especially solar cells, because of their excellent properties. Here, we present first report low-voltage high-gain phototransistors based on perovskite/organic-semiconductor vertical heterojunctions, which show ultrahigh responsivities ~109A W-1 and specific detectivities ~1014 Jones in a broadband region from ultraviolet to near infrared. The high sensitivity devices is attributed...

Abstract In the past several years, organic–inorganic hybrid perovskites and all inorganic have attracted enormous research interest in a variety of optoelectronic applications including solar cells, light‐emitting diodes, semiconductor lasers, photodetectors for their plenty appealing electrical optoelectrical properties. Benefiting from inherent amplification function transistors pronounced photogating effect, perovskite‐based phototransistors can provide very high photoresponsivity gain,...

Abstract A new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free‐standing ZnO nanorod (ZnONR) array with layer of transparent monolayer graphene (MLG) film. The single‐crystalline [0001]‐oriented ZnONR has length about 8–11 μm, and diameter 100∼600 nm. Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs. By studying I–V characteristics in temperature range...

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The barrier height 0.75 eV exhibited excellent rectifying behavior rectification ratio 10(3) at ±0.8 V the dark and power efficiency (PCE)...

In this work, a sensitive deep ultraviolet (DUV) light photodetector based on inorganic and lead-free Cs3Cu2I5 crystalline film derived by solution method was reported. Optoelectronic characterization revealed that the perovskite device exhibited nearly no sensitivity to visible illumination with wavelength of 405 nm but pronounced both DUV UV response speeds 26.2/49.9 ms for rise/fall time. The Ilight/Idark ratio could reach 127. What is more, responsivity specific detectivity were...

We report on the large-scale synthesis of polycrystalline multilayer PtSe2 film with typical semimetallic characteristics. With availability large-area film, we constructed a heterojunction composed and Cs-doped FAPbI3, which can function as self-driven photodetector in broadband wavelength from ultraviolet to near-infrared region. Further photoresponse analysis revealed that device showed outstanding photosensitive characteristics large Ilight/ Idark ratio 5.7 × 103, high responsivity 117.7...

In this paper, we investigated the fluorescent properties of gold nanoparticles (GNPs) with several tens nanometers by ensemble fluorescence spectrometry, correlation spectroscopy (FCS), and microscopy. We observed that GNPs synthesized citrate reduction chloroauric acid possessed certain fluorescence, narrow full width at half-maximum (17 nm), an increase particle sizes, emission intensity showed a gradual while wavelength remained almost constant (at 610 nm). Especially, excellent behavior...

Heterojunctions near infrared (NIR) photodetectors have attracted increasing research interests for their wide-ranging applications in many areas such as military surveillance, target detection and light vision. A high-performance NIR photodetector was fabricated by coating the methyl-group terminated Si nanowire array with plasmonic gold nanoparticles (AuNPs) decorated graphene film. Theoretical simulation based on finite element method (FEM) reveals that AuNPs@graphene/CH3-SiNWs device is...

The current Si-based photovoltaic devices require high-quality raw materials and intricate processing techniques to construct complex device structures; further improvement in efficiency a drastic decrease cost are thus highly desired promote their extensive applications. In this work, we conducted comprehensive study on high-efficiency graphene/Si nanoarray Schottky junction solar cells. Besides the Si nanowire (SiNW) array, nanohole (SiNH) array was first used for construction since it...

Graphene–Si Schottky junction solar cells are promising candidates for high-efficiency, low-cost photovoltaic applications. However, their performance enhancement is restricted by strong carrier recombination and relative low barrier height. Here, we demonstrated the successful construction of high-efficiency graphene–planar Si via modification surface with a molecule monolayer as well tuning interface band alignment an organic electron blocking layer. Methylated showed capability to...

Schottky junction solar cells were constructed by combining the monolayer graphene (MLG) films and Si nanowire (SiNW) arrays. Pronounced photovoltaic characteristics investigated for devices with both p-MLG/n-SiNWs n-MLG/p-SiNWs structures. Due to balance between light absorption surface carrier recombination, made of SiNW arrays a medium length showed better performance could be further improved enhancing MLG conductivity via appropriate treatment or doping. Eventually, photoconversion...

The broadband heterojunction photodetectors, exhibiting superior photoresponse performances ranged from deep ultraviolet to near-infrared, were made by growing a multilayered PtSe₂ film directly onto Si.

Organometal halide perovskite materials have attracted much attention recently for their excellent optoelectronic properties. Here, we report an ultrasensitive phototransistor based on the multiheterojunction of CH3NH3PbI3–xClx perovskite/poly(3-hexylthiophene)/graphene first time. Since photoexcited electrons and holes are effectively separated by poly(3-hexylthiophene) layer, high-density trapped in leading to a strong photogating effect underlying graphene channel. The demonstrates...

Abstract In this study, a sensitive infrared photodetector (IRPD) composed of germanium nanocones (GeNCs) array and PdSe 2 multilayer is presented, which obtained by straightforward selenization approach. The as‐assembled /GeNCs hybrid heterojunction exhibits obvious photovoltaic behavior to 1550 nm illumination, renders the IRPD self‐driven device without external power supply. Further analysis reveals that based high sensitivity 1350, 1550, 1650 illumination with excellent stability...

Recently, by taking advantage of the synergistic effects both graphene and ZnO, various photoelectric devices that combine ZnO have exhibited excellent device performances attracted increasing research interest.

Abstract Photodetection in the solar‐blind deep‐ultraviolet (DUV) regime (200–280 nm) has received significant attention for its many critical applications military and civil areas. In this study, a vapor–solid synthesis technique catalyst‐free growth of single‐crystalline β‐Ga 2 O 3 nanowires is developed. A photodetector made highly sensitive to 265 nm DUV illumination with excellent photoresponse performance. The performance parameters including I light / dark ratio, responsivity,...