A5002730771- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Thermodynamic and Structural Properties of Metals and Alloys
- Thermal and Kinetic Analysis
- Flood Risk Assessment and Management
- Urban Stormwater Management Solutions
- Transition Metal Oxide Nanomaterials
- Infrared Target Detection Methodologies
- Integrated Circuits and Semiconductor Failure Analysis
- Graphene research and applications
- Water resources management and optimization
- Photovoltaic System Optimization Techniques
- GaN-based semiconductor devices and materials
- Material Properties and Processing
- Optical Coatings and Gratings
- Calibration and Measurement Techniques
- 2D Materials and Applications
- Machine Learning in Materials Science
- Electron and X-Ray Spectroscopy Techniques
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Physics of Superconductivity and Magnetism
Hillsborough County Public Schools
2025
Bohai University
2017-2019
Institute of Semiconductors
1989-1990
We have found a new electron trap state in Si-doped AlxGa1−xAs by deep level transient spectroscopy and constant temperature capacitance measurements under strong light illumination. This is shallower than the DX center associated with Si impurity that its emission capture activation energies are equal to 0.20±0.05 0.17±0.05 eV, respectively. Its maximum concentration comparable of center. Possible origins this relationship discussed.
We present two major points in this paper: (1) Statistics derived from the negative-U property of DX center are not consistent with existing Hall experiments Si-doped ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As. (2) The discrepancy between model and can be improved if there exist different donors SD comparable concentrations ${N}_{\mathrm{SD}}$ ${N}_{\mathrm{DX}}$, ${N}_{\mathrm{SD}}$/${N}_{\mathrm{DX}}$ increases increasing ${N}_{\mathrm{Si}}$. is a...
A new high-efficiency light-trapping structure (HE-LTS) with two cavities is proposed and designed for ultrathin c-Si solar cells. The results show that by optimizing the size parameters of HE-LTS, photocurrent density value a cell its active layer equal to 4.5 μm close Lambertian LTS at each wavelength in range from 300 nm 970 greatly exceeds 1200 nm; HE-LTS can exceed adjusting wide range.
This paper employs the Heyd-Scuseria-Ernzerhof (HSE) function to research electronic structures of monolayer InxAl1-xN with different compositions (x = 0, 0.25, 0.5, 0.75, 1) based on first-principles, and optical properties single-layer are calculated by Generalized Gradient Approximation-Perdew Burke Ernzerhof (GGA-PBE) function. The influence structure has been analyzed. Then doping quantity characteristics summarized, which also indicates trend complex dielectric absorption spectrum....
Dmochowski (preceding Comment) has suggested that the shallow donor level we proposed in our earlier paper [Phys. Rev. B 40, 1430 (1989)] could be a negative-U center. While this proposal is possible, it will require number of modifications calculations also.
与传统的有基底FPA(焦平面阵列)相比, 基于全镂空支撑框架结构的新型无基底FPA在热学特性上存在显著差异, 传统的基于恒温基底假设的热学分析模型不再适用, 因此, 通过电学比拟方法, 将无基底FPA的热响应特性等效为电学模型.通过该模型, 进一步分析了无基底FPA在非真空环境下的热学性能, 分析表明: 该无基底FPA具有在大气压下优良的红外成像性能, 其NETD(噪声等效温度差)值仅比真空环境下增加了数倍.;Thermal characteristics of new substrate-free FPA (focal plane array) with full hollow supporting frame structure are very different from that traditional substrate FPA. The thermal analysis model which based on temperature-constant assumption is not efficient any more. Therefore, an...