A5055867813- Semiconductor Quantum Structures and Devices
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Semiconductor Lasers and Optical Devices
- Perovskite Materials and Applications
- Nanowire Synthesis and Applications
- Metal and Thin Film Mechanics
- Organic Light-Emitting Diodes Research
- Advanced Semiconductor Detectors and Materials
- Ga2O3 and related materials
- Quantum and electron transport phenomena
- Stellar, planetary, and galactic studies
- Integrated Circuits and Semiconductor Failure Analysis
- Chalcogenide Semiconductor Thin Films
- Transition Metal Oxide Nanomaterials
- Biological Activity of Diterpenoids and Biflavonoids
- Synthetic Organic Chemistry Methods
- Organic Electronics and Photovoltaics
Friedrich-Alexander-Universität Erlangen-Nürnberg
2023-2024
Institute of Semiconductors
1988-2001
Chinese Academy of Sciences
1988-2001
Peking Union Medical College Hospital
1996
University of Science and Technology of China
1989
Light management (LM) is the key to encapsulation of high-performance silicon (Si) photovoltaic devices (PVs). In this work, simulation analyses provide meaningful insights into optical losses and guide improvement PV performance encapsulated solar cells (Encap-Si SCs). An antireflective layer, textured polydimethylsiloxane (PDMS), designed reduce reflection losses, especially at a lower illumination intensity, thereby achieving an 10.89% in short-current density (
We have found a new electron trap state in Si-doped AlxGa1−xAs by deep level transient spectroscopy and constant temperature capacitance measurements under strong light illumination. This is shallower than the DX center associated with Si impurity that its emission capture activation energies are equal to 0.20±0.05 0.17±0.05 eV, respectively. Its maximum concentration comparable of center. Possible origins this relationship discussed.
In recent years, luminescent solar concentrators (LSCs) have gained a renaissance as pivotal transparent photovoltaic (PV) for building-integrated photovoltaics (BIPVs). However, most of the studies focused on light-selective LSCs, and less attention was paid to utilization full spectrum. this study, lead-free microcrystal Cs2AgxNa1-xBiyIn1-yCl6 (CANBIC) perovskite phosphor is demonstrated bifunctional effects down-shifting (LDS) light scattering fabrication realizing response from...
Colloidal AgIn5S8/ZnS quantum dots (QDs) have recently emerged as a promising, efficient, nontoxic, down-shifting material in optoelectronic devices. These QDs exhibit high photoluminescent yield and offer range of potential applications, specifically the field photovoltaics (PVs) for light management. In this work, we report an eco-friendly method to synthesize deposit them on commercial silicon solar cells (with active area 7.5 cm2), with which short-circuit current (JSC) enhanced by 1.44%...
Raman scattering, photoluminescence (PL), and nuclear reaction analysis (NRA) have been employed to investigate the effects of rapid thermal annealing (RTA) on GaN films grown sapphire (0001) substrates by gas-source molecular-beam epitaxy. The spectra showed presence E2 (high) mode shift this from 572 568 cm−1 caused annealing. results that RTA has a significant effect strain relaxation lattice expansion misfit between epilayer substrate. PL peak exhibited blueshift in its energy position...
We investigated properties of intraband absorption in In x Ga 1-x As quantum dots (QDs) superlattice. Energy levels conduction band QDs were calculated for a cone-shaped dot associated with coupling between the framework effective-mass envelope-function theory. Theoretical results demonstrated that energy greatly affected by vertical dots, which can be used to modify transition wavelength adjusting space layer thickness. Intraband is really sensitive normal incidence and peak intensity...
Abstract Titanium disulfide quantum dots (TiS 2 QDs) has garnered significant research interest due to its distinctive electronic and optical properties. However, the effectiveness of TiS QDs in electromagnetic interference (EMI) shielding is influenced by various factors, including their size, morphology, monodispersity, tunable bandgap, Stokes shift interfacial effects. In this study, we propose a systematic approach for synthesis with small size (3.1 nm), uniform dispersion (∼1.5...