A5011229806- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- High-Temperature Coating Behaviors
- Nuclear reactor physics and engineering
- Aluminum Alloys Composites Properties
- Anodic Oxide Films and Nanostructures
- Semiconductor materials and interfaces
- Nuclear Physics and Applications
- Astronomical and nuclear sciences
- Advanced Materials Characterization Techniques
- Nuclear physics research studies
- Electronic and Structural Properties of Oxides
- Nanoporous metals and alloys
- Metal and Thin Film Mechanics
- Radiation Detection and Scintillator Technologies
- Electron and X-Ray Spectroscopy Techniques
- Structural Engineering and Materials Analysis
- Metallic Glasses and Amorphous Alloys
- Aluminum Alloy Microstructure Properties
- Quasicrystal Structures and Properties
- Atomic and Molecular Physics
- Advanced ceramic materials synthesis
- Radiation Therapy and Dosimetry
- Nuclear Materials and Properties
University of Connecticut
2017-2020
Southern Connecticut State University
2015
Yale University
2015
Interface (United States)
2015
FZI Research Center for Information Technology
1970-1974
The recently discovered low-load metal-assisted catalytic etching (LL-MACE) creates nanostructured Si with controllable and variable characteristics that distinguish this technique from the conventional high-load variant. LL-MACE employs 150 times less metal catalyst produces porous instead of nanowires. In work, we demonstrate some features cannot be explained by present understanding MACE. With mechanistic insight derived extensive experimentation, it is demonstrated (1) method allows use...
Metal-assisted catalytic etching (MACE) using Ag nanoparticles as catalysts and H2O2 oxidant has been performed on single-crystal Si wafers, electronics grade powders polycrystalline metallurgical powders. The temperature dependence of the etch kinetics measured over range 5 – 37 °C. Etching is found to proceed preferentially in a direction with an activation energy ~0.4 eV substrates (001), (110) (111) orientations. A quantitative model explain preference for developed be consistent...
Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such on conventional semiconductors has integrate functionality with semiconductor device technology. We demonstrate 2DEGs a by growing GdTiO3-SrTiO3 silicon. Structural analysis confirms epitaxial growth abrupt high degree crystallinity. Transport measurements show conduction be an interface effect, ∼9 × 1013...
Metal-assisted catalytic etching (MACE) involving Ag deposited on Si particles has been reported as a facile method for the production of nanowires (Si NWs). We show that structure subjected to MACE changes dramatically in response changing loading catalyst. The use acetic acid surfactant and controlled injection AgNO3(aq) enhanced deposition. H2O2 not only facilitated optimization step but also allowed us identify previously unobserved regime we denote low-load (LL-MACE). Material produced...
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ReEtching produces nanostructured silicon when a catalytic agent, e.g. dissolved V2O5, is used to facilitate etching between Si and H2O2. H2O2 regenerates V in 5+ oxidation state, which initiates by injecting holes into the valence band. Independent control over extent of reaction (controlled amount added) rate at pumped etchant solution) allows us porosify substrates arbitrary size, shape doping, including wafers, single-crystal powders, polycrystalline metallurgical grade powder,...
The applications for silicon span a wide variety of fields including electronics, drug delivery, and energy storage.In particular, porous (por-Si) is great interest in optoelectronic energy-harvesting due to the ability absorb scatter light.Additionally, Si possesses greatest specific capacity alloy with lithium making this element favorable battery [1].A common method used create por-Si metal-assisted catalytic etching (MACE), which exploits enhanced kinetics electron transfer at...
Injection of H 2 O to control both the rate and extent etching allowed us discover a new regime MACE with extremely small quantities deposited metal as catalyst: low-load (LL-MACE). 1 The structure particles subjected LL-MACE is completely different compared conventional MACE. Si nanowires mesoporous micro- or nano-particles are produced high yield, low cost controlled properties suitable for applications in e.g . lithium-ion batteries, drug delivery, well biomedical imaging contrast...
Regenerative electroless etching (ReEtching) [1] is a method of producing nanostructured semiconductors in which, e.g., dissolved V 2 O 5 used as catalytic agent to facilitate between Si and H . regenerates 5+ oxidation state, which capable initiating by injecting holes into the valence band. The enhanced control over extent reaction (controlled amount added) rate at pumped etchant solution) allows us porosify substrates arbitrary size, shape doping, including wafers, single-crystal powders,...