A5011696122- Semiconductor materials and devices
- Anodic Oxide Films and Nanostructures
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Nanoporous metals and alloys
Finland University
2020
University of Eastern Finland
2020
The recently discovered low-load metal-assisted catalytic etching (LL-MACE) creates nanostructured Si with controllable and variable characteristics that distinguish this technique from the conventional high-load variant. LL-MACE employs 150 times less metal catalyst produces porous instead of nanowires. In work, we demonstrate some features cannot be explained by present understanding MACE. With mechanistic insight derived extensive experimentation, it is demonstrated (1) method allows use...
Injection of H 2 O to control both the rate and extent etching allowed us discover a new regime MACE with extremely small quantities deposited metal as catalyst: low-load (LL-MACE). 1 The structure particles subjected LL-MACE is completely different compared conventional MACE. Si nanowires mesoporous micro- or nano-particles are produced high yield, low cost controlled properties suitable for applications in e.g . lithium-ion batteries, drug delivery, well biomedical imaging contrast...