A5057439895- Magnetic Properties and Applications
- Magnetic properties of thin films
- Magnetic Properties of Alloys
- Shape Memory Alloy Transformations
- Magnetic and transport properties of perovskites and related materials
- Ferroelectric and Piezoelectric Materials
- Heusler alloys: electronic and magnetic properties
- Multiferroics and related materials
- Rare-earth and actinide compounds
- Microstructure and Mechanical Properties of Steels
- Microwave Dielectric Ceramics Synthesis
- ZnO doping and properties
- Advanced Condensed Matter Physics
- Topological Materials and Phenomena
- Transition Metal Oxide Nanomaterials
- Metallic Glasses and Amorphous Alloys
- Anodic Oxide Films and Nanostructures
- Electronic and Structural Properties of Oxides
- Luminescence Properties of Advanced Materials
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Photorefractive and Nonlinear Optics
- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Ga2O3 and related materials
Institute of Physics
2010-2024
Chinese Academy of Sciences
2010-2024
Capital Medical University
2024
Jinan University
2023
King Abdullah University of Science and Technology
2020
University of Chinese Academy of Sciences
2020
Lanzhou University
2020
Songshan Lake Materials Laboratory
2020
National Laboratory for Superconductivity
2016-2018
Nanjing University
2014-2015
The opportunity of spinel ferrites in nonvolatile memory device applications has been demonstrated by the resistive switching performance characteristics a Pt/NiFe2O4/Pt structure, such as low operating voltage, high yield, long retention time (up to 105 s), and good endurance 2.2 × 104 cycles). dominant conduction mechanisms are Ohmic low-resistance state lower-voltage region high-resistance Schottky emission higher-voltage state. On basis measurements temperature dependence resistances...
Here, we report on the experimental discovery of biskyrmion magnetic nanodomains at RT and observation a biskyrmion-derived topological Hall effect (THE) in centrosymmetric hexagonal MnNiGa magnet. Using phase reconstruction technique based transport-of-intensity equation (TIE), established texture spin. Results from Lorentz transmission electron microscopy (TEM) revealed that is stable over much wider temperature range (100 K to ~340K) larger field our material than skyrmion-hosting bulk...
The quest for materials hosting topologically protected skyrmionic spin textures continues to be fueled by the promise of novel devices. Although many have demonstrated existence such textures, major challenges remain addressed before devices based on magnetic skyrmions can realized. For example, being able create and manipulate at room temperature is great importance further technological applications because they adapt various external stimuli acting as information carriers in spintronic...
Highly c-axis oriented Mg0.2Zn0.8O thin films with hexagonal structure were prepared on Pt/TiO2/SiO2/Si substrates by sol-gel spin coating technique. The Pt/Mg0.2Zn0.8O/Pt devices showed a reversible and steady resistance switching characteristic. from low state (LRS) to high (HRS) ratio of HRS LRS about 25 was achieved at voltage as 0.65 V. dominant conduction mechanisms explained Ohmic behavior trap-controlled space charge limited current, respectively. Furthermore, formation conducting...
A series of unprecedentedly wide Curie-temperature windows (CTWs) between 40 and 450 K are realized by employing the isostructural alloying principle for strongly coupled magnetostructural phase transitions in a single host system. The CTWs provide design platform magneto-multifunctional multiferroic alloys that can be manipulated quite large temperature space various scales patterns, as well multiple physical fields.
Nanoscale topologically non-trivial spin textures, such as magnetic skyrmions, have been identified promising candidates for the transport and storage of information spintronic applications, notably racetrack memory devices. The design realization single skyrmion chain at room temperature (RT) above in low-dimensional nanostructures are great importance future practical applications. Here, we report creation a bubble geometrically confined Fe3Sn2 nanostripe with width comparable to featured...
The elastic properties, phase stability, and magnetism correlations among them in all-$d\text{\ensuremath{-}}\mathrm{metal}$ Heusler compounds, i.e., ${\mathrm{Ni}}_{2}\mathrm{Mn}T$ ($T=\mathrm{Sc}$, Ti, V, Cr, Y, Zr, Nb, Mo, Hf, Ta, W) were systematically investigated by first-principles calculations. results indicated that compounds not fully consistent with the conventional atomic preferential occupation rule family. Within scope of structures, containing early transition metal atoms...
Transparent p-n heterojunctions composed of p-type NiO and n-type MgZnO thin films were fabricated on indium-tin-oxide-coated glass substrates by sol-gel spin coating technique. The junctions exhibit typical current-voltage behaviors with good rectifying characteristics, their electrical properties can be effectively tuned band gap engineering n-MgZnO. With increment Mg content in n-MgZnO layer, enlarging lead to the higher forward threshold voltage, breakdown lower reverse saturation...
We report on the co-existence of bipolar and unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt structures which ZnFe2O4 layer was fabricated by a chemical solution deposition method. The memory devices show reproducible stable switching, tri-state under only applied negative bias voltage, transited from with different electroforming conditions. Excellent cycling both is demonstrated. Based conducting filament model, electrochemical metallization effect has been proposed to explain...
Ho3+-Yb3+ co-doped bismuth titanate ferroelectric thin films were prepared by a chemical solution deposition method on fused silica substrates and their up-conversion luminescence characteristics excited 980 nm diode laser investigated. The two emission bands centered at 546 656 in the spectra can be assigned to 5F4 + 5S2 → 5I8 5F5 transitions of Ho3+ ions, respectively. A bright green was observed even when pumping power relatively low. dependence intensity indicated that two-photon...
Photoluminescence (PL) spectra impacted by electric polarization in Pr3+ doped diphase (1-x)BaTiO3-xCaTiO3 (x = 0.4–0.7) ceramics were studied systematically. The transparent electrode of indium tin oxide was deposited on both surfaces to reduce experimental errors and then PL properties characterized with without polarization. An enhancement intensity ∼100% obtained the Ba1−xCaxTiO3 0.7) It found that increased same level whether poling direction up or down. With x increases, enhanced...
The discovery of magnetic skyrmion bubbles in centrosymmetric magnets has been receiving increasing interest from the research community, due to fascinating physics topological spin textures and its possible applications spintronics. However, key challenges remain, such as how manipulate nucleation exclude trivial or metastable that usually coexist with magnets. Here, we report having performed this task by applying spatially geometric confinement a frustrated Fe3Sn2 magnet. We demonstrate...
We reported the discovery of colossal resistance switching effect in polycrystalline spinel-like structure MgZnO thin films with high Mg contents sandwiched by Pt electrodes. The ultrahigh ratio state to low about seven nine orders magnitude a reset voltage less than 1 V was obtained this film system. shows an increase several compared those previously material systems including metal oxides, semiconductors, and organic molecules. This will greatly improve signal-to-noise simplify process...
In this paper, we report an experimental observation of the large anomalous Hall effect (AHE) in a hexagonal ferromagnetic Fe5Sn3 single crystal with current along b axis and magnetic field normal to bc plane. The intrinsic contribution conductance sigma_AH^int was approximately 613 {\Omega}-1 cm-1, which more than 3 times maximum value frustrated kagome magnet Fe3Sn2 nearly independent temperature over wide range between 5 350 K. analysis results revealed that AHE dominated by common, term,...
Highly transparent (Bi,Eu)4Ti3O12 (BEuT) ferroelectric thin films were prepared on indium-tin-oxide (ITO)-coated glass substrates by using chemical solution deposition technique, and the photoluminescence electrical properties of investigated in terms annealing temperature concentration europium ions. The BEuT had a polycrystalline bismuth-layered perovskite structure exhibited excellent optical transmittance. Photoluminescence spectra included two strong peaks which originated from...
We have developed a hybrid chemical solution method for preparing nanocomposite thin films composed of ferroelectric Bi(3.6)Eu(0.4)Ti(3)O(12) (BEuT) matrix and highly c-axis-oriented ZnO nanorods on Si substrates. First, seed-layer growth approach was used to prepare the nanorods, then deposition employed fabricate BEuT by coating using spin-coating technique. The obtained exhibited significantly enhanced red photoluminescence (PL) properties. PL enhancement can be attributed very efficient...
Strong upconversion green luminescence was observed in Er3+ and Yb3+ codoped Bi4Ti3O12 ferroelectric thin films. The films were prepared on fused silica Pt/TiO2/SiO2/Si substrates by chemical solution deposition method. There are two strong emission bands centered at 524 545 nm a weak red band 667 the spectra pumped 980 room temperature. They correspond to radiative relaxation of from H211/2, S43/2, F49/2 levels ground level I415/2, respectively. Bi3.65Yb0.3Er0.05Ti3O12 exhibit higher...
There have been many interests in exploring multiferroic materials with superior ferroelectric and magnetic properties for the purpose of developing multifunctional devices. Fabrication thin films plays an important role achieving this purpose, since multiferroicity can be tuned via strain, dimensionality size effect, without varying chemical composition. Here, we report exotic behaviors, including high-TC (~75 K) state, a large spontaneous polarization (~4900 μC/m2) relatively strong...
Pr 3+ /La ‐codoped Bi 4 Ti 3 O 12 (BPLT) ferroelectric thin films were prepared on fused silica and Pt/TiO 2 /SiO /Si substrates by the chemical solution deposition method, their photoluminescence electrical properties investigated. Different from Pr‐doped ATiO (A=Sr, Ca) titanate showing a red emission with highest peak at 612 nm, BPLT exhibited strong blue–green 493 nm. This can be ascribed to difference of host lattice between simple perovskite structure bismuth‐layered and/or site...
The up-conversion (UC) photoluminescence and ferroelectric properties of Bi4−xErxTi3O12 (BErT) thin films were studied in terms annealing temperature Er3+ doping concentration. prepared by chemical solution deposition method. There are two green emission bands centered at 527 548 nm, a red band 663 nm UC luminescence spectra measured under 980 laser excitation room temperature, which correspond to the radiative transitions from 2H11/2, 4S3/2, 4F9/2 4I15/2, respectively. quenching...