A5003050185- Advanced Memory and Neural Computing
- Supercapacitor Materials and Fabrication
- Ferroelectric and Piezoelectric Materials
- Advancements in Battery Materials
- Ferroelectric and Negative Capacitance Devices
- Advanced battery technologies research
- Transition Metal Oxide Nanomaterials
- Multiferroics and related materials
- Microwave Dielectric Ceramics Synthesis
- Conducting polymers and applications
- Perovskite Materials and Applications
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- 2D Materials and Applications
- Neuroscience and Neural Engineering
- Electrocatalysts for Energy Conversion
- Water Quality Monitoring and Analysis
- Graphene research and applications
- Acoustic Wave Resonator Technologies
- Electronic and Structural Properties of Oxides
- Photorefractive and Nonlinear Optics
- Extraction and Separation Processes
- CCD and CMOS Imaging Sensors
- Advanced Photocatalysis Techniques
South China Normal University
2016-2025
Institute of Semiconductors
2021-2023
Shanghai Institute for Science of Science
2022-2023
Huazhong University of Science and Technology
2022
Beijing Solar Energy Research Institute
2021-2022
First Affiliated Hospital of Jinan University
2022
University of Azad Jammu and Kashmir
2022
ETH Zurich
2022
Sun Yat-sen University
2008-2014
Shanghai Normal University
2010-2012
Abstract Li‐rich Mn‐based (LRM) cathode materials are considered promising candidates for next‐generation lithium‐ion batteries due to their high specific capacity and cost‐effectiveness. However, they exhibit deficiencies in volumetric energy density, largely attributable lower compaction which constrains application space‐limited devices such as electric vehicles portable devices. In this study, (NH 4 ) 2 S O 8 surface treatment is proposed enhance the density stability performance of LRM...
We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The films were fabricated by a low temperature photochemical solution deposition method, simple process combining chemical and ultraviolet (UV) irradiation treatment. a-IGZO based devices exhibit long retention, good endurance, voltages, stable distribution high resistance states. Electrical conduction mechanisms also discussed the basis current–voltage characteristics their dependence....
Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, fabricated demonstrated a superior performance through combination of its high sensitivity (up 10(4) A W(-1)) and EQE value 10(5)), well ultrafast (<26 ms) response speed, which indicates that balance between photocurrent gain speed has been achieved....
In this work, we report an optoelectronic synapse based on the Bi2O2Se/Cs3Cu2I5 heterojunction formed by consequently depositing Bi2O2Se and Cs3Cu2I5 thin films chemical vapor deposition methods. The fabricated Au/Bi2O2Se/Cs3Cu2I5/Au devices exhibit light-tunable photoresponse under visible light illumination. Synaptic functions including paired-pulse facilitation, transition from short-term plasticity to long-term plasticity, associative learning optical encoding, are conveniently...
Highly c-axis oriented Mg0.2Zn0.8O thin films with hexagonal structure were prepared on Pt/TiO2/SiO2/Si substrates by sol-gel spin coating technique. The Pt/Mg0.2Zn0.8O/Pt devices showed a reversible and steady resistance switching characteristic. from low state (LRS) to high (HRS) ratio of HRS LRS about 25 was achieved at voltage as 0.65 V. dominant conduction mechanisms explained Ohmic behavior trap-controlled space charge limited current, respectively. Furthermore, formation conducting...
In this letter, the dynamic evolution of TiN/HfO2/Pt device from bipolar resistive switching (BRS) to complementary (CRS) was reported. The exhibits uniform BRS with long retention, good endurance, and self-compliance characteristics after asymmetric two-step electroforming. However, eventually transforms CRS transitional processes through controlling compliance current. Meanwhile, effective barrier height rises up accordingly as evolves CRS. These superior performances here can be...
We report reproducible resistive switching performance and relevant physical mechanism of sandwiched Pt/CoFe2O4/Pt structures in which the CoFe2O4 thin films were fabricated by a chemical solution deposition method. Uniform voltages, good endurance, long retention have been demonstrated memory cells. On basis analysis current-voltage characteristic its temperature dependence, we suggest that carriers transport through conducting filaments low resistance state with Ohmic conduction behavior,...
Abstract Low-dimensional materials exhibit unique quantum confinement effects and morphologies as a result of their nanoscale size in one or more dimensions, making them distinctive physical properties compared to bulk counterparts. Among all low-dimensional materials, due atomic level thickness, two-dimensional possess extremely large shape anisotropy consequently are speculated have optically anisotropic absorption. In this work, we demonstrate an optoelectronic device based on the...
Transparent p-n heterojunctions composed of p-type NiO and n-type MgZnO thin films were fabricated on indium-tin-oxide-coated glass substrates by sol-gel spin coating technique. The junctions exhibit typical current-voltage behaviors with good rectifying characteristics, their electrical properties can be effectively tuned band gap engineering n-MgZnO. With increment Mg content in n-MgZnO layer, enlarging lead to the higher forward threshold voltage, breakdown lower reverse saturation...
We report on the co-existence of bipolar and unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt structures which ZnFe2O4 layer was fabricated by a chemical solution deposition method. The memory devices show reproducible stable switching, tri-state under only applied negative bias voltage, transited from with different electroforming conditions. Excellent cycling both is demonstrated. Based conducting filament model, electrochemical metallization effect has been proposed to explain...
In this work, nonvolatile bipolar resistive switching behaviors based on the MoS2 quantum dots (QDs) embedded in insulating polymethylmethacrylate (PMMA) were reported with device configuration of Au/PMMA/PMMA:MoS2 QDs/PMMA/fluorine doped tin-oxide. The exhibits reversible performances excellent read endurance and data retention capability. related carrier transport predominated by Schottky emission Ohmic conductions OFF ON states, respectively. Importantly, a conductance quantization effect...
Charge density wave (CDW) as a novel effect in two-dimensional transition metal dichalcogenides (TMDs) has obtained rapid rise of interest for its physical nature and potential applications oscillators memory devices. Here, we report var der Waals epitaxial growth centimeter-scale 1T-VTe2 thin films on mica by molecular beam epitaxy. The VTe2 showed sudden resistance change at temperatures 240 135 K, corresponding to two CDW phase transitions driven temperature. Moreover, the can be an...
The ultraviolet (UV) photodetector is a device that converts optical signals into electrical and the core component of all UV detection systems. A based on combination Graphene (Gr, 2D) GaN (3D) has been reported in this work. High-performance ultra-shallow van der Waals heterojunction photodetectors were realized work, effects an interfacial HfO2 tunneling layer their photoelectric characteristics investigated detail. findings study indicated defects effectively repaired by depositing thin...
We reported the discovery of colossal resistance switching effect in polycrystalline spinel-like structure MgZnO thin films with high Mg contents sandwiched by Pt electrodes. The ultrahigh ratio state to low about seven nine orders magnitude a reset voltage less than 1 V was obtained this film system. shows an increase several compared those previously material systems including metal oxides, semiconductors, and organic molecules. This will greatly improve signal-to-noise simplify process...
In this work, amorphous MgZnO/ZnO heterostructure films were deposited on Pt/TiO2/SiO2/Si at room temperature. By programming the proper compliance current, bipolar resistive switching performances of TiN/MgZnO/ZnO/Pt devices stabilized; dispersion voltages and resistance states suppressed simultaneously. view filamentary model, elimination secondary multiple nanofilaments in higher current was suggested to be responsible for observed improvement. Furthermore, good endurance retention...
Highly transparent (Bi,Eu)4Ti3O12 (BEuT) ferroelectric thin films were prepared on indium-tin-oxide (ITO)-coated glass substrates by using chemical solution deposition technique, and the photoluminescence electrical properties of investigated in terms annealing temperature concentration europium ions. The BEuT had a polycrystalline bismuth-layered perovskite structure exhibited excellent optical transmittance. Photoluminescence spectra included two strong peaks which originated from...
We have developed a hybrid chemical solution method for preparing nanocomposite thin films composed of ferroelectric Bi(3.6)Eu(0.4)Ti(3)O(12) (BEuT) matrix and highly c-axis-oriented ZnO nanorods on Si substrates. First, seed-layer growth approach was used to prepare the nanorods, then deposition employed fabricate BEuT by coating using spin-coating technique. The obtained exhibited significantly enhanced red photoluminescence (PL) properties. PL enhancement can be attributed very efficient...