A5101866941- GaN-based semiconductor devices and materials
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Fiber Optic Sensors
- Body Composition Measurement Techniques
- Silicon Nanostructures and Photoluminescence
- Optical Network Technologies
- Thin-Film Transistor Technologies
- Iterative Learning Control Systems
- Industrial Technology and Control Systems
- Graphite, nuclear technology, radiation studies
- Advanced Photonic Communication Systems
- Metal and Thin Film Mechanics
- Quality and Safety in Healthcare
Xidian University
2023-2024
Emcore (United States)
2011
The University of Texas MD Anderson Cancer Center
2008
University of New Mexico
2001-2005
We design, fabricate and demonstrate 850 nm VCSEL PD arrays which operate at 25 Gb/s per channel, up to 600 with 24 channels, for low-power parallel optical module applications. also report a complete back-to-back link.
Nanoheteroepitaxial growth of GaN by metal-organic chemical-vapor deposition on dense arrays (111) Si nanopillars has been investigated. Scanning electron microscopy, cross-sectional transmission and electron-diffraction analysis 0.15-μm-thick layers indicate single-crystal films. Most the mismatch defects were in-plane stacking faults threading dislocation concentration was <108cm−2 at interface decreased away from interface. High-resolution microscopy indicated that grain-boundary...
This letter reports the growth of spatially separated hexagonal and cubic phases GaN on a patterned Si(001) substrate by metalorganic vapor-phase epitaxy. The surface was with grooves having 355 nm period. Each groove consisted two opposed Si{111} facets that were surfaces. Epitaxial this began selectively yielded phase. With further growth, phase regions separately grown coalesced, strongly misaligned c axes (∼110°). after coalescence subsequently confirmed, transmission electron microscopy...
Integrated circuit technology has undergone significant advancements and progress over the past few decades. However, as demand to further shrink sizes increases, traditional IC interconnections face challenges such RC delay, energy loss, interconnect interference, which become increasingly prominent. Optical interconnection emerges a promising solution mitigate these issues by enabling reductions in size, power consumption, signal delay. In this article, we propose novel lateral Si <sub...
Ge has become a focus in the development of optoelectronic devices integrated into silicon platforms due to its compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. To reduce bandgap Ge, thereby enhancing optical properties and accelerating CMOS-compatible silicon-based germanium light sources, we propose strained LED microbridge structure. By etching two isosceles triangles opposite apexes on layer utilizing edge stress concentration, ideal tensile strain...
Modifying germanium to achieve efficient light emission holds great potential in the field of silicon-based sources. We propose a method introducing stress by repeatedly etching trenches and filling them with silicon nitride (SiN). By combining tin (GeSn) alloys an external layer SiN, modification is achieved. performed process device simulations on structure, results showed that ∼0.8 GPa biaxial tensile was introduced into active region light-emitting diode, peak wavelength 2200 nm maximum...
Quantum dot (QD) lasers have many attractive features including low-threshold current density, high gain, low chirp and superior temperature stability. In this paper, design, fabrication characteristics of wafer-level index coupled holographically fabricated 1.3μm QD distributed feedback (DFB) are reported. Previously, 1.3 μm QD-DFB were with metal surface gratings, which lossy (being typically written by e-beam lithography) difficult to fabricate. devices using molecular beam epitaxy (MBE)...
After decades of advancement, optoelectronic technology has emerged as a pivotal player in various domains such optical communication, interconnection, and computer However, the challenge integrating devices with complementary metal-oxide-semiconductor (CMOS) remains unresolved. Germanium, its unique band structure, can be transformed into direct bandgap semiconductor through introduction tensile strain, enabling efficient light emission. This provides solution for development integrated...