A5074760176- Ga2O3 and related materials
- ZnO doping and properties
- Solid State Laser Technologies
- Photorefractive and Nonlinear Optics
- Advanced Photocatalysis Techniques
- Luminescence Properties of Advanced Materials
- Advanced Fiber Laser Technologies
- Electronic and Structural Properties of Oxides
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Acoustic Wave Resonator Technologies
- Optical and Acousto-Optic Technologies
- Advanced Fiber Optic Sensors
- Photonic Crystal and Fiber Optics
- Semiconductor materials and devices
- Perovskite Materials and Applications
- Multiferroics and related materials
- Ferroelectric and Piezoelectric Materials
- Crystal Structures and Properties
- GaN-based semiconductor devices and materials
- Optical properties and cooling technologies in crystalline materials
- Solid-state spectroscopy and crystallography
- Microwave Dielectric Ceramics Synthesis
- Photonic and Optical Devices
- Laser Design and Applications
Shandong University
2016-2025
State Key Laboratory of Crystal Materials
2016-2025
Jinan Institute of Quantum Technology
2024
Changshu Institute of Technology
2022
Suzhou University of Science and Technology
2022
Soochow University
2022
Harbin Institute of Technology
2022
Sun Yat-sen University
2018
University of Chinese Academy of Sciences
2018
The Synergetic Innovation Center for Advanced Materials
2018
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga2O3) has emerged as a highly viable semiconductor for new researches. This article mainly focuses on growth processes, characteristics, applications Ga2O3. Compared with single crystals epitaxial other wide-bandgap semiconductors, large-size high-quality β-Ga2O3 can be efficiently grown low cost, making them competitive. Thanks availability crystals, films, high-performance devices based Ga2O3 go...
A high-performancesolar-blind photodetector based on Cr-doped gallium oxide (Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) has been fabricated. 140-nm-thick Ga layer was mechanically exfoliated from bulk crystal. The a field-effect transistor structure, which showed very high photo-to-dark current ratio larger than 106 and excellent saturation. When the tested with 254-nm...
Two-dimensional (2D) metal oxides exhibit extraordinary mechanical and electronic properties, leading to new paradigms in the design of optical systems. However, as a representative, 2D Ga2O3-based memristor has rarely been touched, which is hindered by challenges associated with large-scale material synthesis. In this work, ultrathin Ga2O3 layer (∼3 nm thick) formation on liquid gallium (Ga) surface transferred lateral dimensions over several centimeters substrate via squeeze-printing...
Abstract The persistent photocurrent (PPC) and high carrier concentration are challenging the ultraviolet photodetection behaviors of amorphous InGaO films. Herein, InGaO/PbI 2 heterojunction is constructed by an all‐solution synthesis process to set up a built‐in electric field at interface, which aimed inhibition PPC, suppression dark current, promotion photogenerated separation. With optimized In content 90%, as‐fabricated photodetector exhibits excellent self‐powered near‐ultraviolet...
Amorphous In
To suppress noise from full daylight background or environmental radiation, a spectrally selective solar-blind photodetector is widely required in many applications that need detection of light within specific spectral range. Here, we present highly narrow-band photodetectors by polarization engineering the anisotropic transitions β-Ga2O3 single crystals. The polarized transmittance characteristics reveal direct valance subbands to conduction band minimum are tuned between 4.53 and 4.76 eV...
A Schottky barrier rectifier was fabricated with a (100)-oriented <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> substrate grown by the edge-defined film-fed method. The Sn-doped had an effective donor concentration of approximately notation="LaTeX">$2\times...
This letter reports a high-performance solar-blind phototransistor based on N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -annealed β-Ga O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> microflake for weak light detection. The exhibits an ultra-low dark current of 27 fA, high external quantum efficiency 8.36 x 107%, photo-to-dark-current ratio 1.08 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> , low power consumption...
Abstract Self‐powered solar‐blind photodiodes with convenient operation, easy fabrication, and weak‐light sensitivity, are highly desired in environmental monitoring deep space exploration. Ga 2 O 3 its bandgap directly corresponding to waveband is a promising candidate material for photodetection. However, ever‐reported self‐powered suffer unsatisfactory photoresponse performance, owing unideal interface electrode transmittance. Here, Ag nanowire (AgNW) networks excellent ultraviolet...
In this Letter, we report on establishing high performance hysteresis-free and μs-switching depletion/enhancement-mode (D/E-mode) β-Ga2O3 heterojunction (HJ) field effect transistors (FETs) with the state-of-art power figure-of-merit (P-FOM). By optimizing p-NiOx/n-Ga2O3 interface n-Ga2O3 recess technology, a positive threshold voltage (VT) as well low subthreshold slope can be substantially achieved. The trade-off between on-resistance (Ron,sp) breakdown (BV) is improved by incorporation of...
The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at periphery of anode contacts. With energy 50 keV and dose 5 × 1014 cm−2 1 1016 cm−2, reverse breakdown voltage increases from 209 252 451 V (the maximum up 550 V) Baliga figure-of-merit (VBR2/Ron) also 25.7 30.2 61.6 MW about 17.5% 140% enhancement, respectively. According 2D simulation, electric fields junction corner are smoothed out after position...
In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100) β-Ga2O3 are investigated through C − V J measurement. The measurement results reveal that incoming makes both structures attain an increasing dielectric constant, which means a better gate control ability transistors comparing single Al2O3. Additionally, the interface state density extracted by high-low frequency capacitance method...
This work reports a β-Ga2O3 double-barrier Schottky barrier diode (DBSBD) with both low turn-on voltage and reverse leakage current by using Ni PtOx as the anode electrode. The height of PtOx-based can be effectively modulated from 1.26 to 1.62 eV adjusting oxygen pressure during sputtering processes. Combining maximum function electrode optimization ratio PtOx, DBSBD an diameter DNi /DPtOx = 75/150μm not only exhibits high forward 470.9 A/cm2 (at 3.5 V), on-resistance 4.1 mQ ·cm2 1.13 V,...
Realizing omnidirectional self-powered photodetectors is central to advancing next-generation portable and smart photodetector systems. However, the traditional typically achieved by integrating complex hemispherical microlens on multiple photodetectors, which makes detection system cumbersome restricts its application in field. Here, facile high-performance flexible are solution-processed two-dimensional (2D) layered PbI2 nanoplates transparent conducting substrates. Characterization of...
Abstract Fabricating a heterojunction photodetector is efficient to take advantage of the built‐in electric field formed by and thus improve performance photodetector. Herein, CuZnS/Ga 2 O 3 type‐II designed constructed chemical bath deposition for first time. The exhibits super high rectifying characteristics (5.7 × 10 4 at ± 1 V), responsivity (48.01 mA W −1 0 detectivity (1.83 12 Jones which are higher than most reported inorganic devices as far authors know. Benefiting from...
We report on the continuous wave (CW) and passive Q-switching performance of a high-power diode-pumped Nd:GGG laser. A CW output power 7.20 W was obtained under an absorbed pump 14.97 W, which gives slop efficiency 52.7%. With Cr 4+ doped yttrium aluminum garnet crystal as saturable absorber, shortest passively Q-switched pulse width, largest energy, highest peak achieved were 7.7 ns, 126.25 μJ, 15.5 kW, respectively.
In this Letter, self-reaction etching (SRE) with Ga flux demonstrates the capability of eliminating surface contaminations and damage, as well improving electrical characteristics interface between monoclinic gallium oxide (β-Ga2O3) insulator. Compared to post-tetramethyl ammonium hydroxide wet chemical treatment, SRE is a low damage repair method that effectively removes contaminants introduced during previous inductively coupled plasma β-Ga2O3 without damage. As consequence, band bending...
The Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetectors (SBPDs) face the tradeoff between power consumption (<inline-formula> <tex-math notation="LaTeX">$P_{\text {C}}$ </tex-math></inline-formula>) and photoresponse performance. Here, an ultrasensitive two-terminal photodetector based on <inline-formula> notation="LaTeX">$\boldsymbol {\beta }$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> microflake with extremely-low working voltage notation="LaTeX">${P}_{\text...
Abstract The development of nonlinear optical (NLO) devices is limited to the mid‐infrared range due lack broadband NLO response. As an indirect band gap semiconductor, BiOCl has a ≈3.3 eV. special anisotropic lamellar structure makes it exhibit excellent electrical and properties; however, its saturable absorption effect rarely reported. In this study, response, properties, applications crystals grown by chemical vapor phase transport method are studied in detail. transmission spectrum...
In the past decades, Tb3Ga5O12 crystal has been market-dominating for visible–near-infrared Faraday applications. However, its relatively low Verdet constant as well heavy volatilization of Ga2O3 during growth makes it challenging to meet continuous development advanced lasers. this work, a novel Tb3Al3Ga2O12 is designed and studied first time. We demonstrated that possesses better visible transparency, higher thermal conductivity, larger compared with crystal. Moreover, due great reduction...