A5084402240- Radio Frequency Integrated Circuit Design
- Analog and Mixed-Signal Circuit Design
- Advancements in PLL and VCO Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Microwave Engineering and Waveguides
- Low-power high-performance VLSI design
- Semiconductor Quantum Structures and Devices
- Neuroscience and Neural Engineering
- Ultra-Wideband Communications Technology
- Electromagnetic Compatibility and Noise Suppression
- Error Correcting Code Techniques
- Particle Detector Development and Performance
- Advanced Wireless Communication Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Radiation Effects in Electronics
- Acoustic Wave Resonator Technologies
- Electrostatic Discharge in Electronics
- GaN-based semiconductor devices and materials
- Innovative Energy Harvesting Technologies
- VLSI and Analog Circuit Testing
- Advanced Power Amplifier Design
- CCD and CMOS Imaging Sensors
- Cellular Automata and Applications
- ECG Monitoring and Analysis
University of Padua
2014-2024
IMEC
2022
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
2002-2017
Engineering (Italy)
2012
University of Pavia
2001
Rutherford Appleton Laboratory
2001
Istituto Nazionale per la Fisica della Materia
1997-1999
University of Modena and Reggio Emilia
1990
The system design of an integrated microwave imaging radar for the diagnostic screening breasts cancer is presented. A custom circuit implemented in a 65-nm CMOS technology and pair patch antennas realized on planar laminate are proposed as basic module antenna array. operates broad frequency range from 2 to 16 GHz with dynamic 107 dB. Imaging experiments carried out realistic breast phantom show that capable detecting tumor targets resolution 3 mm.
In this brief, we propose to use a transformer-based resonator build dual-mode oscillator, e.g., system capable of oscillating at two different frequencies without recurring switched inductors, capacitors, or varactors. The behavior the configured as one-port and two-port network is studied analytically, dependence quality factor on design parameters thoroughly explored. These results, combined with traditional frequency tuning techniques, are applied wide-band voltage-controlled oscillator...
A fully integrated differential low-power low-noise amplifier (LNA) for ultrawideband (UWB) systems operating in the 3-5-GHz frequency range is presented. two-section LC ladder input network exploited to achieve excellent match a wideband fashion and optimize noise performance. Prototypes fabricated digital 0.13-mum complementary metal oxide semiconductor technology show following performance: 9.5-dB peak power gain, 3.5-dB minimum figure, -6-dBm input-referred 1-dB compression point,...
A 0.13-mu m CMOS fourth-order notch filter for the rejection of 5-6 GHz interference in UWB front-ends is reported. The integrated into an analog front-end Mode #1 UWB. thorough analysis based on a simplified model carried out. An algorithm automatic tuning and calibration also discussed demonstrated. Two versions circuit are designed fabricated: first comprises low-noise amplifier filter, second expands it to complete front-end. In latter version was redesigned. provides more than 35 dB...
This paper presents a fully integrated UWB-IR transceiver front-end operating in the 7.25-8.5 GHz band designed for high overall transmission and detection energy efficiency robustness to interferers. The features pulsed transmitter that wakes up when triggered by digital signal, generates pulse, automatically switches-off less than 2 ns. receiver includes an LNA, VGA, squarer, windowed integrator, comparator perform PPM demodulation of data. A prototype was 0.13 μm CMOS technology. delivers...
This study proposes an energy detector for a noncoherent impulse-radio UWB receiver, designed in 0.18-mum CMOS technology. The squaring functionality is realized exploiting the quadratic characteristic of MOS transistors, and deviation from such due to short channel effects device mismatch carefully considered paper. squared signal integrated using Gm-C integrator that interfaced with squarer flipped voltage follower current sensor as converter. proposed circuit dissipates 5.4 mW receiver...
A study of K-band SiGe bipolar VCOs is reported in this paper. The design challenges related to the operation and use a pure technology are discussed with particular emphasis achieving low phase noise while using varactor diodes. Two different have been designed fabricated. In designs, coupled active element by means magnetic transformer avoid tuning voltages exceeding supply voltage. All operated class-C. One designs features dynamic biasing ensure robust start-up conditions. feature as...
Short-channel Ga/sub 0.47/In/sub 0.53/As high electron mobility transistors (HEMTs) suffer from low breakdown voltages due to enhanced impact-ionization effects in the narrow bandgap channel. This could limit application of single-channel devices medium power millimeter-wave systems. A composite 0.53/As/InP channel, which exploits at electric fields, and saturation velocity InP fields can overcome this limitation. In paper we study on-state off-state composite-channel HEMT's with a variable...
In today's connected world, smaller and leaner wireless applications emerge, calling for increasingly higher integration footprint, while ensuring high reliability operation at limited supply voltages. this context, the of power amplifier (PA) is a challenge. Wireless transmission requires Watt-level peak power, which usually achieved by means dedicated external PA, although monolithic PA within radio transceiver has recently become more common [1-6]. both cases, however, voltage provided,...
In this paper, we analyze the impact of process variations on clock skew VLSI circuits designed in deep submicrometer technologies. With smaller feature size, utilization a dense buffering scheme has been proposed order to realize efficient and noise-immune distribution networks. However, local variance MOSFET electrical parameters, such as V/sub T/ I/sub DSS/, increases with scaling device dimensions, thus causing large intradie variability timing properties buffers. As consequence, expect...
The APV25 is a chip designed for readout of silicon microstrips in the CMS tracker at CERN Large Hadron Collider. It first major high energy physics experiment to exploit modern commercial 0.25 /spl mu/m CMOS technology. Experimental characterisation circuit shows excellent performance before and after irradiation. Automated probe testing many chips has demonstrated very yield. A summary design, detailed results from measurements, are presented.
In this work, a dual-mode oscillator built around transformer-based resonator is proposed. By making use of technique, wideband VCO designed that features 69% tuning range spanning from 3.4 GHz to 7 GHz. An excellent 14.8 dB power-frequency-tuning-normalized figure merit, accounting -118.6 dBc/Hz phase noise at 1 MHz offset the 4.6 carrier mW power consumption, reported
This work presents the design and test results of an analog decoder for 40-bit block length, rate 1/3, Turbo Code defined in UMTS standard. The prototype is fully integrated a three-metal double-poly 0.35-/spl mu/m CMOS technology, includes I/O interface that maximizes throughput. After successful implementation proof-of-concept iterative decoders by different research groups both bipolar technologies, this first reported realistic error-correcting code. was successfully tested at maximum...
Sub-harmonic injection locking is employed to generate the fast-hopping carriers required in UWB systems for WiMedia . A very small area 90-nm CMOS prototype synthesizes frequencies of band group #6 with a hop time shorter than 4 ns It occupies 0.074 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and draws 30 mA from 1.2 V supply. Phase noise at 8.71 GHz -112 dBc/Hz 1 MHz offset. The design supported by thorough analysis that...
The nonmonotonic behavior of gate current I/sub g/ as a function gate-to-source voltage V/sub gs/ is reported for depletion-mode double-implant GaAs MESFETs. Experiments and numerical simulations show that the main contribution to (in range drain biases studied) comes from impact-ionization-generated holes collected at electrode, bell shape g/(V/sub gs/) curve strongly related drop electric field in channel device moved towards positive values.< <ETX...
GSM-compliant local oscillator consuming a tiny die area of only 0.06 mm and drawing 9 mA from 1.2 V supply has been designed in 65 nm CMOS process using thin-oxide devices only. The system is made 13 to 15 GHz LC VCO followed by divide-by-four injection-locked frequency divider. divider employs ring oscillator-based topology leading two octave locking range with limited power consumption. phase noise at the output below -133 dBc/Hz 3 MHz offset over tuning range.
We present a behavioral analysis of two different transceiver architectures for UWB breast cancer imaging employing SFCW radar system. A mathematical model the direct conversion and super heterodyne together with numerical phantom are developed. FDTD simulations data used on to investigate limits both from circuit-level point view. Insight is given into I/Q phase inaccuracies their impact quality final reconstructed images. The result that simplicity makes receiver more robust towards...
This paper is a review of recent progress RD53 Collaboration. Results obtained on the study radiation effects 65 nm CMOS have matured enough to define first strategies adopt in design analog and digital circuits. Critical building blocks very front end chains been designed, tested before after 5–800 Mrad. Small prototypes 64×64 pixels with complex architectures produced, point address main issues dealing extremely high pixel rates, while operating at small in-time thresholds end. The...
A 12 GHz VGA showing a gain variation range from -9 dB to 13 with linear-in-dB control feature is presented in this work. As the changed, phase shift over entire 10-14.4 bandwidth varies as little ≤ 2° due compensation circuitry that reduces input-output sensitivity variations robust manner respect temperature changes. Such reduced particularly useful simplify signal phase/amplitude for various paths of phased array system, and allows implement ultra-low sidelobe arrays. The prototypes,...
In this paper, the susceptibility of a Kuijk bandgap voltage reference to electromagnetic interferences (EMIs) superimposed power supply is investigated. A model circuit derived from experimental tests consisting scattering parameters and measurements on test chip. The able correctly predict by means SPICE transient simulations. simulations identify fundamental stray components responsible for EMI coupling that are usually not taken into account in postlayout analyses. From point view,...
A BiCMOS VGA for the emerging 5G mobile communication systems operates from 15.5 to 39GHz with a maximum 17 dB gain, features 43 gain variation, and, due use of compensation circuits, it shows reduced phase shift namely 3° up 30GHz variation 23 dB. The NF is 3.6-9 dB, its IIP3 -1 dBm, while power consumption 104mW.
This brief presents a 64-channel neural recording system-on-chip (SoC) with 20-Mb/s wireless telemetry. Each channel of the analog front end consists low-noise bandpass amplifier, featuring noise efficiency factor 3.11 an input-referred 5.6 μV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</sub> in 0.001- to 10-kHz band and 31.25-kSps 6-fJ/conversion-step 10-bit SAR analog-to-digital converter. The recorded signals are multiplexed digital...
This paper investigates the electroluminescence characteristics of InGaN-based LEDs at extremely low current levels (down to 500 pA), i.e. in and below region where recombination dynamics are governed by Shockley–Read–Hall recombination. Two different regimes identified current–voltage characteristics, a first one 100 nA associated emission wavelength midgap, second μA with dominant quantum well wavelength. The experimental findings interpreted considering that, current, carriers can tunnel...