Masayuki Ishikawa

ORCID: 0000-0002-8510-9392
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About
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Research Areas
  • Semiconductor Lasers and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Photonic and Optical Devices
  • Synthesis and Reactions of Organic Compounds
  • Synthesis and Biological Evaluation
  • Semiconductor materials and devices
  • Advanced Semiconductor Detectors and Materials
  • Vacuum and Plasma Arcs
  • Mechanical Circulatory Support Devices
  • Chalcogenide Semiconductor Thin Films
  • Solid State Laser Technologies
  • Synthesis and Characterization of Heterocyclic Compounds
  • Chemical synthesis and alkaloids
  • Electrical Fault Detection and Protection
  • GaN-based semiconductor devices and materials
  • Advanced Fiber Laser Technologies
  • Synthesis and biological activity
  • Metallurgy and Material Forming
  • Electronic Packaging and Soldering Technologies
  • Neonatal Health and Biochemistry
  • Synthesis and Reactivity of Heterocycles
  • Phenothiazines and Benzothiazines Synthesis and Activities
  • Semiconductor materials and interfaces
  • Quinazolinone synthesis and applications
  • Cardiac Structural Anomalies and Repair

Chiba University Hospital
2017-2024

Chiba University
2012-2024

keiyu Hospital
2021

International University of Health and Welfare
2018

Ibaraki University
2005-2017

Mitsubishi Materials (Japan)
2005-2016

National Institute of Technology, Kisarazu College
1989-2015

Toshiba (Japan)
1996-2013

Research & Development Corporation
2013

Mita Hospital
2012

In cascade perfusion and superfusion experiments on rabbit tissues, when acetylcholine (ACh) was introduced into the circuit so as to perfuse aorta under with noradrenaline (NA), effluent relaxed transverse aortic strip which had been denuded of endothelium. The from perfused capable relaxing also significantly inhibited platelet aggregation induced by arachidonic acid (AA) in a volume‐related manner. inhibitory activity decreased prolongation transit time before addition platelet‐rich...

10.1111/j.1476-5381.1986.tb10218.x article EN British Journal of Pharmacology 1986-06-01

Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical expressions for modulation response, resonance frequency, damping rate, K factor to include these effects. They show theoretically experimentally that carrier lead significant low-frequency parasitic-like rolloff reduces response by as much six in also that, addition, it leads reduction effective differential gain thus while nonlinear...

10.1109/3.159508 article EN IEEE Journal of Quantum Electronics 1992-01-01

A highly stable triple-integration noise-shaping technology which permits greater accuracy for monolithic audio A/D converters is discussed. Based on this technology, a 16-bit 24-kHz bandwidth A-D converter LSI with digital filters was successfully fabricated in 2-/spl mu/m CMOS technology. An SNR (S/(N+THD)) of 91 dB and total harmonic distortion (THD) 0.002% at full-scale input were attained.

10.1109/jssc.1987.1052839 article EN IEEE Journal of Solid-State Circuits 1987-12-01

We demonstrate room temperature pulsed operation of nitride based multi-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional C-face sapphire substrate. Cleavage was performed along the <11*BAR*2*BAR*0> direction substrate, and resultant facet analyzed using an atomic force microscope (AFM) theoretical calculation. A single peak emisson, at wavelength 417.5 nm, full width half-maximum 0.15 obtained. The threshold current density 50 kA/cm 2 voltage for 20 V.

10.1143/jjap.35.l1315 article EN Japanese Journal of Applied Physics 1996-10-01

High-efficiency InGaAlP surface emission light emitting diodes (LEDs) have been successfully fabricated. Newly designed double-heterostructure LEDs with a GaAlAs current spreading layer were employed to expand the area, which is necessary take out efficiently. The external quantum efficiency was 1.5% at 620 nm orange for an In0.5 (Ga0.8Al0.2)0.5P active LED. This LED five times more efficient than that of and GaAsP LEDs. 563 green electroluminescence, shortest wavelength ever reported LEDs,...

10.1063/1.104407 article EN Applied Physics Letters 1991-03-11

It is shown experimentally that the modulation bandwidth of quantum well lasers can be reduced by a factor six due to carrier transport across undoped layers laser as in separate confinement heterostructure (SCH). Analytical expressions are given for response function, resonance frequency, damping rate and K include transport, it responsible low-frequency rolloff which limits quantum-well lasers. also leads reduction effective differential gain, while gain compression remains largely...

10.1109/68.122335 article EN IEEE Photonics Technology Letters 1992-02-01

Results achieved on the operation of short-wavelength InGaAlP visible-light laser diodes are described. It is found that there a strong correlation between temperature and oscillation wavelength. The deterioration favorable characteristics in region attributed to an increase leakage current, which originates small conduction-band discontinuity inherent material system. introduction highly doped p-cladding layer improves these characteristics. Short-wavelength at 630-nm-band wavelength was...

10.1109/3.89966 article EN IEEE Journal of Quantum Electronics 1991-06-01

We report lasing at temperatures as high 144 °C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel design using GaAs/AlAs quarter-wavelength stacks for one mirror. characteristic temperature T0 of the device increases from 42 K room to 81 above 80 gain peak moves into resonance with longer wavelength mode.

10.1063/1.107972 article EN Applied Physics Letters 1992-12-28

Carrier transport has a significant effect on the high-speed characteristics of semiconductor lasers. The authors show theoretically and experimentally that low frequency rolloff excess increase damping due to carrier significantly limits modulation bandwidth long wavelength InGaAs(P)-InP quantum-well inherent small conduction band offset hole diffusion constant this material are responsible for severe effects. also discuss optimum design high speed lasers advantages InGaAlAs-InP system.<...

10.1109/3.159530 article EN IEEE Journal of Quantum Electronics 1992-01-01

Study Design. An anatomic study of the associations between fifth lumbar spinal nerve (L5 nerve) and a lumbosacral tunnel, consisting vertebral body body), ligament, sacral ala, clinical case reports four patients with radiculopathy secondary to entrapment L5 in tunnel. Objectives. To delineate anatomic, clinical, radiologic features surgical outcome Summary Background Data. Although several cadaveric studies on tunnel as possible cause have been reported, few had focused osteophytes L5–S1...

10.1097/00007632-200203150-00020 article EN Spine 2002-03-01

To obtain highly reliable InGaP/InGaAlP inner stripe (IS) lasers, the relation between maximum CW operation temperature and other laser characteristics has been determined. The Al composition of cladding layer, carrier concentration p-cladding thicknesses active layer have optimized. It was found that an 0.7 most suitable for optimized 4*10/sup 17/ cm/sup -3/. A 90 degrees C obtained a 0.1- mu m thickness 0.6- thickness. This is highest value IS lasers. In case 0.06- 0.8- thickness, 75...

10.1109/3.29283 article EN IEEE Journal of Quantum Electronics 1989-06-01

An 8-b video-rate subranging analog-to-digital (A/D) converter with pipelined wideband sample-and-hold (S/H) amplifiers is described. The chip architecture based on a newly developed technique that combines digital-to-analog subconverter and subtractor in one body. development of bandwidth enhancement for the S/H amplifier yields wide effective resolution using 1- mu m CMOS technology. 25 MHz was achieved, as well small input capacitance 1.5 pF, due to high performance circuit developed.<...

10.1109/4.44983 article EN IEEE Journal of Solid-State Circuits 1989-01-01

As previously reported, three rearrangement products were obtained on irradiation of quinaldine 1-oxide in methanol solution. To investigate the scope and further clarification mechanism this rearrangement, reaction has been extended to a variety substituted azanaphthalene N-oxides some phenanthridine N-oxides. The results seem support postulated mechanism, namely, photochemical formation three-membered ring intermediate (such as IV case quinoline 1-oxides) its subsequent thermal final products.

10.1248/cpb.14.1102 article EN Chemical and Pharmaceutical Bulletin 1966-01-01

A new structure for InGaAlP light-emitting diodes (LEDs) which include a GaAlAs current-spreading layer has been designed. Remarkable improvements in external efficiency have achieved using this structure. The photoluminescence and electroluminescence characteristics of high-Al-content alloys investigated. GaAs substrate with an intentional surface misorientation from the nominally (100) plane towards [011] direction was found to marked effect on improvement emission properties. quantum 1.2%...

10.1143/jjap.31.2446 article EN Japanese Journal of Applied Physics 1992-08-01

638 nm room temperature (25°C) CW operation was successfully achieved by InGaAlP visible light laser diodes with a quaternary active layer. A transverse mode stabilised selectively buried ridge-waveguide structure fabricated metalorganic chemical vapour deposition. The threshold current 100 mA at 25°C and attained up to 50°C. oscillation wavelength the shortest for operations of ever reported.

10.1049/el:19900142 article EN Electronics Letters 1990-01-01

Long-term reliability tests of over 10,000 hours have been carried out for 670-nm-wavelength InGaAlP visible laser diodes at elevated ambient temperatures beyond 50°C. Lifetime characteristics inner stripe structure lasers were investigated from the viewpoints structural parameter and aging conditions. At least two degradation modes observed in laser. One them was related to facet oxidation reduced by coating. The other mode strongly depended on operation current density. Mean times failure...

10.1143/jjap.28.1615 article EN Japanese Journal of Applied Physics 1989-09-01

The purpose of the present experiments was to investigate pharmacological mechanisms vasoconstriction caused by toxin (pCrTX) which had been partially purified from tentacles jellyfish Carybdea rastonii (‘Andonkurage’). pCrTX (0.1 10 μg ml −1 ) produced a tonic contraction rabbit aortic strips, nearly abolished in Ca 2+ ‐free medium and significantly reduced verapamil or diltiazem. stimulated 45 ‐influx this effect markedly attenuated verapamil. pCrTX‐induced phentolamine, 6‐hydroxydopamine...

10.1111/j.1476-5381.1986.tb10235.x article EN British Journal of Pharmacology 1986-07-01

When ultrasonic oscillations are applied during static testing, the flow stress decreases. The purpose of present work is to elucidate what extent 'the superimposition effect' can explain this phenomenon. On basis superimposition, decrements in stress, Δτ, were calculated neglecting mean internal stress. From measurements specimen temperatures and comparison between measured decrements, following conclusive remarks drawn.(1) effect temperature rise on was negligible superimposed range...

10.2320/matertrans1960.20.706 article EN Transactions of the Japan Institute of Metals 1979-01-01

Benzbromarone (BBR) is metabolized to 1'-hydroxy BBR and 6-hydroxy in the liver. 6-Hydroxy further 5,6-dihydroxy BBR. The aim of this study was identify CYP isozymes involved metabolism human liver microsomes. Among 11 recombinant P450 examined, CYP3A4 showed highest formation rate significantly correlated with testosterone 6β-hydroxylation activity a panel 12 completely inhibited by ketoconazole pooled On other hand, found CYP2C9. correlation observed between diclofenac 4'-hydroxylation...

10.1002/bdd.1813 article EN Biopharmaceutics & Drug Disposition 2012-08-30
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