A5101535661- ZnO doping and properties
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Gas Sensing Nanomaterials and Sensors
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Ecology and Conservation Studies
- Nanowire Synthesis and Applications
- Plant and Fungal Species Descriptions
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- Numerical methods in engineering
- Genomics and Phylogenetic Studies
- Advanced Sensor and Energy Harvesting Materials
- Plant Pathogens and Fungal Diseases
- Transition Metal Oxide Nanomaterials
- Advanced ceramic materials synthesis
- Graphene research and applications
- Mineral Processing and Grinding
- Advanced Semiconductor Detectors and Materials
- Mechanical Behavior of Composites
- Semiconductor materials and devices
- High-Velocity Impact and Material Behavior
- Astronomy and Astrophysical Research
- Silicon Nanostructures and Photoluminescence
Kyungpook National University
2014-2024
Changwon National University
2012-2024
Chungnam National University
2014-2019
Government of the Republic of Korea
2015-2018
National Institute for Materials Science
2010-2017
National Institute of Animal Science
2017
University of Tsukuba
2011
Korea Maritime and Ocean University
2008
Yonsei University
2003-2006
Samsung (United States)
2006
Al-doped zinc oxide (ZnO:Al) films were applied to liquid crystal displays (LCDs) as transparent electrodes substituting indium tin (ITO). While the ZnO:Al-based twisted nematic LCD cell showed similar operational behavior ITO-based counterpart, its electro-optical (EO) and residual dc (r-dc) characteristics somewhat improved. Capacitance-voltage relations suggested that these improved EO r-dc of are due substantially lower density charge carrier trapping centers in polyimide layer∕electrode...
We present a new catalog of galaxies in the wider region Virgo cluster, based on Sloan Digital Sky Survey (SDSS) Data Release 7. The Extended Cluster Catalog (EVCC) covers an area 725 deg2 or 60.1 Mpc2. It is 5.2 times larger than footprint classical (VCC) and reaches out to 3.5 virial radius cluster. selected 1324 spectroscopically targeted with radial velocities less 3000 km s−1. In addition, 265 that have been overlooked SDSS spectroscopic survey but available redshifts NASA Extragalactic...
The effect of arsenic doping on optical characteristics ZnO nanowires was investigated by photoluminescence spectroscopy carried out at 13–290K. In as-grown nanowires, emission due to acceptor-bound excitons predominated low temperatures; as temperatures increased, recombination free prevailed. Arsenic-doped exhibited with no exciton in the whole temperature range, indicating formation acceptor level within nanowire doping.
Three-dimensional (3D) ZnO hybrid structure was fabricated by growing a buffer layer, nanowire array, and film continuously through the control of supersaturation conditions. Lower upper ends vertically aligned nanowires in this formed seamless interfacial contacts with layer for current conduction. Photocurrent generated only when ultraviolet (UV) light (λ=350nm) irradiated. This also exhibited different atmosphere-dependent responses to UV light. The optoelectronic properties 3D are...
Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence observed both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related in PL measurements while not CL excitation relaxation processes are suggested as the cause characteristics between CL. strong intensity highly doped demonstrates high energy is a promising...
The interactions between a graphene sheet and an aluminium (111) layer in carbon-aluminium nanocomposite systems were investigated for various interfacial configurations using ab initio simulation based on density functional theory. Dispersion relations electron distributions obtained interface registries suggest that the bond strength of graphene/Al can be controlled by introduction compressive in-plane strain and/or removal some atomic rows along specific crystallographic directions...
The spontaneous formation of a two-layered structure in p-InGaN is observed with increasing Mg doping level. X-ray reciprocal space mappings reveal that the two layers are resulted from phase separation different In contents and strain states. bottom layer near GaN template totally strained low-density dislocations, while top relaxed high-density dislocations. average content much higher than one. layered caused by interpreted terms compressive increase induced relaxation
A flexible multi-wavelength photodetector based on PSi NWs was designed and their fast photoresponse property to all the RGB spectra confirmed.