A5011704681- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- ZnO doping and properties
- Solid State Laser Technologies
- Supercapacitor Materials and Fabrication
- Semiconductor Lasers and Optical Devices
- Advanced battery technologies research
- Advanced Fiber Laser Technologies
- Laser-Matter Interactions and Applications
- Semiconductor materials and devices
- Photorefractive and Nonlinear Optics
- Advanced Photocatalysis Techniques
- Photocathodes and Microchannel Plates
- Thin-Film Transistor Technologies
- Sirtuins and Resveratrol in Medicine
- Spectroscopy Techniques in Biomedical and Chemical Research
- Infrared Thermography in Medicine
- Electrospun Nanofibers in Biomedical Applications
- Semiconductor materials and interfaces
- Extraction and Separation Processes
- Electrocatalysts for Energy Conversion
- Cancer, Stress, Anesthesia, and Immune Response
- Advancements in Battery Materials
- Optical Systems and Laser Technology
Xiamen University of Technology
2010-2025
Shanghai University of Traditional Chinese Medicine
2025
Shanghai University of Medicine and Health Sciences
2025
Xiamen University
2008-2011
Lung cancer is one of the most prevalent and lethal malignant tumors worldwide. Currently, clinical diagnosis primarily relies on chest X-ray examinations, histopathological analysis, detection tumor markers in blood. However, each these methods has inherent limitations. The current study aims to explore novel diagnostic approaches for lung by employing attenuated total reflection-Fourier transform infrared (ATR-FTIR) spectroscopy conjunction with multiple machine learning models. Fourier...
InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs AS-QWs region show improved emission intensity reduced forward voltage compared CS-QWs region. Based on the electroluminescence measurements structure analysis, it can be concluded that these improvements are mainly attributed to efficient hole tunneling through barriers...
This study introduces an enhanced high electron mobility transistor with a lattice-matched AlInGaN/GaN heterojunction and composite gate structure (CGS). The CGS comprises recessed P-type cap layer gate. has limited ability to increase the threshold voltage of device. To address this, based on is proposed further elevate voltage. optimized reaches 7.3 V, accompanied by transconductance 177.5 mS/mm. In addition, concentration two-dimensional gas (2DEG) increased using more strongly...
Due to the enhanced-mode (E-mode) operation, AlGaN/GaN high-electron-mobility transistors (HEMTs) are considered be safer for circuit operation. In order improve threshold voltage (Vth) of device, this work provides a hybrid gate structure HEMT by embedding P-GaN cap on etched graded AlGaN barrier layer. Through simulation calculations, (thickness = 50 nm, concentration P-type 2 × 1018 cm−3) and aluminum (Al) composition (Al:0.3 → 0.24), in layer were optimized. Although calculations show...
Optically pumped GaN-based vertical cavity surface-emitting laser (VCSEL) with two Ta <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> /SiO dielectric distributed Bragg reflectors (DBRs) was fabricated via a simplified procedure: direct deposition of the top DBR onto GaN surface exposed after substrate removal and no use etching polishing processes. Blue-violet lasing action observed at...
GaN/GaInN asymmetric multiple quantum well light-emitting diodes with varying potential barrier thicknesses (5 and 15 nm) are grown by using metal organic chemical vapor deposition. The narrow structure improves the performance of device, including super-linear increase electroluminescence integral intensity, mitigation efficiency droop at high current density, reduction wavelength drift, forward voltage, improvement wall-plug efficiency. This is due to narrowing thickness barrier, which...
project of High Technology Research and Development China [2006AA03Z409]; National Natural Science Foundation [10974165, 91023048]
Compared with conventional InGaN Quantum Wells (QWs), staggered QWs offer improved optical and electronic properties. This work studied the carrier concentration, band structure, overlap of hole electron wave functions, polarization field three-layer in blue spectral region analyzed them detail theoretically to explore source dominant mechanism for improvement. Although theoretical studies indicate that is larger, confinement effect stronger, distribution more uniform. Therefore, can improve...
We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed half-wavelength (0.5λ) length. Lasing action was achieved under optical pumping at room temperature threshold energy density about 6.5mJ∕cm2. The laser emitted blue light 449.5nm narrow linewidth below 0.1nm had high spontaneous emission factor 3.0×10−2. results indicate that this...
The physical mechanism of improving the photoelectric performance InGaN/AlGaN‐based near UV light‐emitting diode (LED) with convex quantum barrier and staggered well (QW) is studied by numerical simulation. simulation results indicate that voltage–current characteristics LED structure QW are effectively improved compared traditional multiple (MQW) structure, its electroluminescence (EL) intensity light output power significantly improved. main mechanisms are: on one hand, a lower average Al...
An auto-split laser lift-off (LLO) method for fabrication of vertical-injection GaN-based green light-emitting diodes (ASV-LEDs) is demonstrated. The ASV-LEDs exhibited a significant improvement in the light output and thermal dissipation, as compared with that conventional LEDs on sapphire. intrinsic physical mechanism LLO technique studied by Frank-Read dislocation clustering model. energy density mesa spacing are shown to be key factors method. It believed this offers an alternative way...
Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta2O5/ SiO2 distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm room temperature under optical pumping. Threshold energy density and emission linewidth 189 mJ/cm2 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.
The serious electron leakage and poor transport of hole injection layers in deep‐ultraviolet (DUV) light‐emitting diodes (LEDs) lead to an imbalance between the currents, which reduces device's performance. Herein, a new DUV LED structure is designed. aluminum composition p‐type electron‐blocking layer (p‐EBL) gradually decreases from 0.95 0.75 along growth direction, replacing traditional bulk p‐EBL. When current 100 mA, optical power this about 32% higher than that structure. In addition,...
Vertical-structured GaN-based light-emitting diodes (V-LEDs) were successfully fabricated using auto-split laser lift-off (LLO) technique. Compared to regular sapphire-substrate LED, the forward voltage of V-LED at 20 mA is about 5% lower, while light output power 43% higher. For V-LED, saturation behavior (Lop) not observed when injection current increased 480 mA, Lop LED starts decrease around 110 mA. These improved results can be attributed total effect less crowding, surface roughening...
Herein, a novel AlGaN‐based multiple quantum well (MQW) deep UV light‐emitting diode (DUV‐LED) structure with two parts linearly graded barriers is presented. The simulation result shows that at current of 50 mA, the light output power DUV‐LED barrier MQWs has significant improvement as compared to stationary barriers. electroluminescence spectrum and radiative recombination rate DUV‐LEDs are also larger more than twice conventional QW structure. reason injection efficiency holes increased...