A5006563252- Silicon Carbide Semiconductor Technologies
- Electrostatic Discharge in Electronics
- Pulsed Power Technology Applications
- Advancements in Semiconductor Devices and Circuit Design
- Advanced MEMS and NEMS Technologies
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- HVDC Systems and Fault Protection
- Semiconductor materials and devices
- Mechanical and Optical Resonators
- Force Microscopy Techniques and Applications
- Experimental Learning in Engineering
- Teleoperation and Haptic Systems
- Photonic and Optical Devices
- Real-time simulation and control systems
- Electrowetting and Microfluidic Technologies
- Semiconductor materials and interfaces
- Mass Spectrometry Techniques and Applications
- Analog and Mixed-Signal Circuit Design
- thermodynamics and calorimetric analyses
- Thin-Film Transistor Technologies
- Nuclear Physics and Applications
- GaN-based semiconductor devices and materials
- Advanced Thermoelectric Materials and Devices
- Soft Robotics and Applications
STMicroelectronics (France)
2024
Texas Tech University
2011-2021
Honeywell (United States)
2020
Southwest Research Institute
2020
One of the major requirements for adoption new silicon carbide (SiC) super gate turn-off thyristors (SGTOs) into high-energy applications is to verify safe operating area and long-term reliability capabilities these devices. In this letter, we have developed a unique testing system that can evaluate performance limitations with respect lifetime 9 kV, 1 cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
SiC SGTO thyristors are an advanced solution for increasing the power density of medium voltage electronics. However, these devices to replace Si thyristor technology in industrial applications their characteristics and failure modes must be understood. This letter presents two 15-kV during repetitive overcurrent conditions. The were evaluated with 2-kA (3.85 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) square pulses 100 μs...
In this work, we describe the development and testing of a three degree freedom meso/micromanipulation system for handling micro-objects, including biological cells microbeads. Three-axis control is obtained using stepper motors coupled to micromanipulators. The test specimen placed on linear X-stage, which one motor. remaining two are Y Z axes micromanipulator. motor-micromanipulator arrangement in has minimum step resolution ∼0.4 μm with total travel 12 mm motor-X stage ∼0.3 10 mm....
The advancement of wide bandgap semiconductor materials has led to the development Gallium Nitride (GaN) power devices, specifically GaN Power MOSFETs. devices have improved characteristics in carrier mobility and on-state resistance compared Silicon solid state switches. With these new a need was established understand behavior switching performance under stress, with regards situations pulsing circuits. Through examination results can be used for improvement advanced circuit design In this...
Silicon carbide (SiC) is becoming a preferred technology of choice for power dense application compared with silicon (Si). A more comprehensive analysis the long-term pulsed reliability SiC necessary so that can make transition commercially. In this article, testbed utilized to evaluate research grade 15-kV MOSFETs and 20-kV IGBTs manufactured by Wolfspeed, Cree Company. was developed here at Texas Tech University (TTU), Lubbock, TX, USA, test these two devices. The narrow pulse testbed's...
The development of new semiconductor devices requires that extensive testing be completed in order to fully understand the device characteristics and performance capabilities. This paper describes evaluation experimental Silicon high power Super Gate Turn Off Thyristors (Si SGTOs) a unique environment. SGTOs are capable blocking forward direction up 5kV also handling several kA when pulsed. structure is asymmetric so reverse these only couple hundred volts. Since special consideration had...
While Silicon Carbide (SiC) based power switching elements are starting to appear that able perform better than their Si counterparts in terms of voltage hold off, current density and operating temperature, the material is still relatively new semiconductor arena, although device designs simulated extensively before being committed fabrication, there often a large discrepancy between actual performance results. Manufacturers certainly carry out some electrical testing these quasi...
A high energy, modular, completely automated test bed with integrated data acquisition and characterization systems was successfully designed in order to perform both safe operating area as well very volume reliability testing on experimental silicon carbide Super Gate Turn Off (SGTO) thyristors. Although the system follows a modular design philosophy, each functional block acting peripheral main control module can be adapted arbitrary power pulse width levels, for specific SGTO devices...
Silicon carbide (SiC) gate turn-off thyristors (GTOs) are an appropriate option for increased power density and thermal dissipating capabilities in pulsed electronics applications due to their enhanced material characteristics. For the transition of silicon (Si)power devices SiC, it is imperative evaluate long-term reliability newly developed SiC devices. The testbed this experiment consists a pulse forming network (PFN) () that subjects device under test (DUT) 15-kV n-type (n-doped epi...
Of all of the material parameters associated with a semiconductor, carrier lifetime is by far most complex and dynamic, being function dominant recombination mechanism, equilibrium number carriers, perturbations in carriers (e.g., injection), temperature, to name prominent variables. The one important bipolar devices, greatly affecting conductivity modulation, on-state voltage, reverse recovery. Carrier also useful metric for device fabrication process control quality. As it such dynamic...
Asymmetric thyristors require protection from voltage and current reversals in high-inductance capacitor discharge systems. Silicon carbide (SiC) PiN diodes capable of blocking up to 16 kV were demonstrated have the high-current capability transmit forward pulse a series configuration with thyristor, clamp reverse an anti-parallel configuration. In switched 1000 pulses at single-shot rate 2000 A peak (3.8 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
An advanced evaluation system for experimental high power Super Gate Turn Off Thyristors (SGTOs) with built - in custom data acquisition and characterization electronics was designed a cooperative agreement between engineers at Texas Tech University's Center Pulsed Power (P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> E) laboratory research scientists Army Research Lab (ARL). The consist of Pulse Forming Network (PFN) energized by...
This paper describes the design and implementation of a small-scale pulsed power system specifically intended to evaluate suitability experimental silicon carbide high Super Gate Turn Off thyristors for action (500 A(2) s above) applications where energy is extracted from storage element in rapid controlled manner. To this end, six each type device was placed three phase rectifier circuit which turn connected an aircraft ground motor-generator set subjected testing protocols with varying...
Future Army power systems will require utilizing high-power and high-voltage SiC devices in order to meet size, weight, volume, high density for fast switching requirements at both component system levels. This paper presents the modeling simulation of a voltage (>12kV) silicon carbide PiN diode action pulsed applications. A model was developed Silvaco Atlas software better understand extreme electrical stresses when subjected high-current pulse. The impact carrier lifetime on performance...
Future Army pulsed power applications semiconductor devices that will meet requirements for high-power, low weight and volume, fast switching speed. The following paper presents the evaluation of high voltage silicon carbide (SiC) super gate turn-off (SGTO) thyristors. These are well suited voltage, temperature continuous electronic systems. A pulse-forming network (PFN) circuit a inductance, series resistor-capacitor (LRC) were developed to evaluate both dI/dt capability pulse safe...
Silicon carbide Super Gate Turn-Off (SGTO) thyristors are an advanced technology for increasing the power density of high voltage pulsed or electronic systems. However, transient characteristics and failure modes these devices have to be further understood. This paper presents Atlas TCAD simulation a 15 kV SiC SGTO thyristor during extreme overcurrent conditions. The simulated device is first validated against dc measurements physical device. then at various pulse current amplitudes using 10...
This article details the design, modeling, construction, and evaluation of an open system calorimeter that operates in a normal room environment to measure endothermic or exothermic events subjected steady heat flux. The is unique because it allows measurement energy power from “open” system, where flux enters leaves calorimetric boundary well-controlled manner. It also novel utilizes solid state heating cooling assembly acts as electronic reservoir. capable measuring levels few milliwatts...
This paper details the design of a test platform for experimental silicon and carbide Super Gate Turn Off devices (SGTOs) capable stressing with very high energy/power levels while at same time mimicking realistic, real world application. To this end an aircraft ground power Motor - Generator set was acquired consisting frequency synchronous generator, D.C. powered brushless exciter machine, 100 HP induction motor. The Si SGTO were then placed in three phase controlled rectifier circuit...
The development of new semiconductor designs requires that extensive testing be completed in order to fully understand the device’s characteristics and performance capabilities. This paper describes evaluation experimental Silicon Carbide high power Super Gate Turn Off Thyristors (SiC SGTOs) a unique test bed is capable stressing devices with very energy/power levels while at same time mimicking realistic, real world application for such devices.
In this work, we describe the development and testing of a three degree freedom (DOF) meso/micro manipulation system for handling biological cells (SF-9) micro objects. Three axis control is obtained using stepper motors coupled to micromanipulators. One motor linear X-stage which holds test specimen. The remaining two are Y Z - micromanipulator arrangement has minimum step resolution ~0.45μm with total travel 10mm X stage ~0.3μm. shaft end commercially available electrostatic MEMS...
Silicon Carbide (SiC) is a leading wide bandgap semiconductor for increasing the power density of bigb applications. This paper overviews long term reliability and safe operating area of15 kV SiC PiN diodes during pulsed current conditions. An automated system used to stress these devices with ultra-high pulses monitor degradation in-system characterization. The capable 100 μs full-width half maximum pulse width up 15 kA, repetition rate 0.5 Hz. Periodic characterization measures device...
An advanced evaluation system for experimental high power silicon (Si) and carbide (SiC) Super Gate Turn Off Thyristors (SGTOs) with custom data acquisition characterization electronics was designed built in a cooperative agreement between engineers at Texas Tech University's (TTU) Center Pulsed Power Electronics (P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> E) laboratory research scientists the U.S. Army Research Lab (ARL). The...
We describe the design, operation, and performance of a new instrumental configuration capable quantitative determinations with sub-picomole accuracy dilute concentrations low mass species, such as He4, He3, Ne20, Ar40, in balance stable hydrogen (H2, DH, D2) gas. This inexpensive system may realize important applications fields ranging from climate studies to fusion energy research, thereby providing an expanded availability this diagnostic within emerging systems research development....