A5100680289- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Pulsed Power Technology Applications
- Electrostatic Discharge in Electronics
- Fluid Dynamics and Turbulent Flows
- Receptor Mechanisms and Signaling
- Copper-based nanomaterials and applications
- Electromagnetic Launch and Propulsion Technology
- 3D Printing in Biomedical Research
- Manufacturing Process and Optimization
- Experimental and Theoretical Physics Studies
- 3D Surveying and Cultural Heritage
- Quantum Computing Algorithms and Architecture
- Plasma Diagnostics and Applications
- Advanced Battery Technologies Research
- Model Reduction and Neural Networks
- Low-power high-performance VLSI design
- Nonlinear Optical Materials Studies
- Laser-Plasma Interactions and Diagnostics
- Robotics and Sensor-Based Localization
- Additive Manufacturing and 3D Printing Technologies
- Design Education and Practice
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
United States Air Force Academy
2021-2023
Universidad del Noreste
2022
Texas Tech University
2016-2021
University of Maryland, College Park
2019
Bioengineering Center
2019
Direct laser writing (DLW) is a three-dimensional (3D) manufacturing technology that offers vast architectural control at submicron scales, yet remains limited in cases demand microstructures comprising more than one material. Here we present an accessible microfluidic multi-material DLW (μFMM-DLW) strategy enables 3D nanostructured components to be printed with average material registration accuracies of 100 ± 70 nm (ΔX) and 190 170 (ΔY) - significant improvement versus conventional...
Silicon carbide (SiC) is becoming a preferred technology of choice for power dense application compared with silicon (Si). A more comprehensive analysis the long-term pulsed reliability SiC necessary so that can make transition commercially. In this article, testbed utilized to evaluate research grade 15-kV MOSFETs and 20-kV IGBTs manufactured by Wolfspeed, Cree Company. was developed here at Texas Tech University (TTU), Lubbock, TX, USA, test these two devices. The narrow pulse testbed's...
Gallium Nitride (GaN) transistors are of great interest for pulsed power and high applications due to the proven capability Silicon Carbide (SiC) transistors. Due recent advances in GaN semiconductors, lateral need be evaluated their performance under repetitive overcurrent operation that can occur electronics or applications. A normally-off Systems GS61008P-E03-TY was a ring down circuit at peak currents up 230 over frequencies ranging from 0.5 20 Hz. Measurement switching transient energy...
Abstract Demand is increasing for effective online tools to perform collaborative engineering design by geographically separated teams. In particular, that facilitate the concept ideation phase of process are sought immediate implementation in product design. this work, researchers conducted a literature review, interviews with practicing engineers, and thorough web search identify available desired features requirements. A set 100 web-based were identified then filtered down 18 candidates...
The Hopf formula for Hamilton-Jacobi reachability (HJR) analysis has been proposed to solve high-dimensional differential games, producing the set of initial states and corresponding controller required reach (or avoid) a target despite bounded disturbances. As space-parallelizable method, avoids curse dimensionality that afflicts standard dynamic-programming HJR, but is restricted linear time-varying systems. To compute reachable sets nonlinear systems, we pair solution with Koopman theory...
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are an ideal option in applications of power electronics due to the wide-bandgap properties material. High is gained through device's unique channel structure. This research investigates whether state-of-the-art GaN HEMT semiconductors reliable a long-term operation switch-mode conditions. Information on overcurrent capability about HEMTs not well established, thus demand investigate devices exists. The GS66508P from Systems,...
Silicon Carbide (SiC) is a wide-bandgap semiconductor with wider bandgap, higher critical electric field, saturation velocity, and thermal conductivity than silicon, making it desirable for pulsed power applications. The n-type Gate Turn-off thyristor (nGTO) controllable solid-state switch high blocking voltage current conduction capabilities. However, its device structure challenging to develop using SiC. Wolfspeed has developed 15.0 kV SiC nGTO that withstood peak up 1.0 kA. A testbed was...
Unites States Air Force (USAF) airbases forward deployed around the globe face increasing risk of attack from rapidly improving adversary weapons. Consequently, USAF has developed Rapid Airfield Damage Repair (RADR) process to standardize and optimize timely repairs in combat scenarios. The task marking striping Minimum Operating Strip (MOS), or portion airfield whose repair will be prioritized, stood out as a that could benefit automation reduce manned assets increase efficiency. To advance...
Gallium nitride (GaN) high-electron-mobility transistors (HEMT) are of great interest for pulsed power applications due to their proven capabilities in RF applications. With further advances GaN semiconductors, there's an the evaluation performance under repetitive overcurrent operation electronics beyond manufacturer's prescribed operating parameters. A HEMT from two different vendors were evaluated a ring down testbed at 475 V with peak current above 80 over repetition rate 138 Hz. The...
Batteries are easy to use, remotely monitorable, not fuel dependent, easily permitted and installed, start automatically reliably during an electrical outage. This makes them optimal for stationary storage power assurance applications. Within battery-based grid storage, as of mid-2017, lithium-ion, sodium-ion, lead-acid systems the leaders, comprising 59% (~1.1 GW), 8% (0.15 3% (0.06 GW) global operational electrochemical respectively. 1 However, these batteries suffer from low energy...
The first GaAs MESFET comparators with internal self calibration circuits are reported. Initial test demonstrated the operation of this self-calibration technique and feasibility comparator resolutions suitable for correcting most errors in all major subcircuits (including comparators) 6-10 bit ADC chip ICs at conversion rates up to 2 GHz. Comparator one 5 mV 1 GHz yield about 60% observed initial testing.