A5038843717- Magnetic properties of thin films
- Quantum and electron transport phenomena
- Physics of Superconductivity and Magnetism
- ZnO doping and properties
- Magnetic and transport properties of perovskites and related materials
- Semiconductor Quantum Structures and Devices
- Topological Materials and Phenomena
- Electronic and Structural Properties of Oxides
- Multiferroics and related materials
- Advanced Condensed Matter Physics
- Magneto-Optical Properties and Applications
- Heusler alloys: electronic and magnetic properties
- Magnetic Properties and Applications
- Magnetic Field Sensors Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Quantum, superfluid, helium dynamics
- Surface and Thin Film Phenomena
- Chalcogenide Semiconductor Thin Films
- Copper-based nanomaterials and applications
- Magnetic Properties of Alloys
- Graphene research and applications
- GaN-based semiconductor devices and materials
- Advanced Chemical Physics Studies
University of Nottingham
2016-2025
Czech Academy of Sciences, Institute of Physics
2016-2025
Czech Academy of Sciences
2014-2024
Leibniz Institute for Solid State and Materials Research
2023
King Abdullah University of Science and Technology
2019
Johannes Gutenberg University Mainz
2015
École Polytechnique Fédérale de Lausanne
2010
MacDiarmid Institute for Advanced Materials and Nanotechnology
2010
Institute of Physics
2009
Charles University
2008
In solid-state materials with strong relativistic spin-orbit coupling, charge currents generate transverse spin currents. The associated Hall and inverse effects distinguish between current where electron is a conserved quantity but its direction not. This review provides theoretical experimental treatment of this subfield spintronics, beginning distinct microscopic mechanisms seen in ferromagnets concluding discussion optical-, transport-, magnetization-dynamics-based experiments closely...
We describe a new effect in semiconductor spintronics that leads to dissipationless spin-currents paramagnetic spin-orbit coupled systems. argue high mobility two-dimensional electron system with substantial Rashba coupling, spin-current flows perpendicular the charge current is intrinsic. In usual case where both split bands are occupied, spin-Hall conductivity has universal value.
We report the experimental observation of spin-Hall effect in a 2D hole system with spin-orbit coupling. The layer is part p-n junction light-emitting diode specially designed coplanar geometry which allows an angle-resolved polarization detection at opposite edges system. In equilibrium angular momenta split heavy-hole states lie plane layer. When electric field applied across channel, nonzero out-of-plane component momentum detected whose sign depends on and for two edges. Microscopic...
Manipulating a stubborn magnet Spintronics is an alternative to conventional electronics, based on using the electron's spin rather than its charge. Spintronic devices, such as magnetic memory, have traditionally used ferromagnetic materials encode 1's and 0's of binary code. A weakness this approach—that strong fields can erase encoded information—could be avoided by antiferromagnets instead ferromagnets. But manipulating ordering tricky. Now, Wadley et al. found way (see Perspective...
The field of spintronics, that is, the use spin-charge coupling in solid-state devices, is both fundamental interest and great promise for practical applications, resistive random access memory being a prime example. Recently transfer orbital angular momentum to spin system materials with strong spin-orbit conjunction broken spatial inversion symmetry has emerged as particularly promising further development this idea. This review discusses theoretical experimental aspects such torques...
The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990's has concentrated three major fronts: i) microscopic origins and fundamental physics ferromagnetism that occurs in these systems, ii) materials science growth defects iii) development spintronic devices with new functionalities. This article reviews current status field, concentrating first two, more mature directions. From point view, (Ga,Mn)As several other DMSs are now regarded as textbook...
We perform a first principles calculation of the anomalous Hall effect in ferromagnetic bcc Fe. Our theory identifies an intrinsic contribution to conductivity and relates it k-space Berry phase occupied Bloch states. This dc has same origin as well-known magneto-optical effect, our result accounts for experimental measurement on Fe crystals with no adjustable parameters.
We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our relates conductance homogeneous ferromagnet to Berry phase acquired by quasiparticle wave function upon traversing closed paths on spin-split Fermi surface. The quantitative agreement between our and experimental data both (In, Mn)As (Ga, systems suggests that this disorder independent contribution conductivity dominates diluted magnetic success model for materials is unprecedented longstanding...
This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic phenomena associated with spin-orbit coupling intrinsic symmetry breaking at interfaces. It provides a historical background literature survey, but focuses recent progress, identifying the most exciting new scientific results pointing to promising future research directions. starts an introduction overview of how basic properties are affected by interfaces, then turns...
Identification of a previously overlooked spontaneous Hall effect mechanism creates opportunities in low-dissipation spintronics.
Magnetism is one of the largest, most fundamental, and technologically relevant fields condensed-matter physics. Traditionally, two basic magnetic phases have been distinguished ferromagnetism antiferromagnetism. The spin polarization in electronic band structure reflecting magnetization ferromagnetic crystals underpins broad range time-reversal symmetry-breaking responses this extensively explored exploited type magnets. By comparison, antiferromagnets vanishing net magnetization. Recently,...
We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium N\'eel order fields, i.e. fields whose sign alternates between the spin sublattices, which trigger ultra-fast spin-axis reorientation. Based on microscopic transport theory calculations we identify staggered current-induced analogous to intra-band and intrinsic inter-band spin-orbit previously reported ferromagnets with broken inversion-symmetry crystal. To illustrate their rich physics utility,...
Abstract Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out Néel vector orientation. Here we demonstrate for Mn 2 Au, a good conductor with high ordering temperature suitable applications, reproducible switching using current pulse generated bulk spin-orbit torques by magnetoresistance measurements. Reversible consistent changes of longitudinal resistance planar Hall voltage star-patterned epitaxial Au(001) thin films were densities ≃10 7...
We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between expectations measured data allows us to conclude that ${T}_{c}$ high-quality metallic samples increases linearly with the number uncompensated local moments ${\mathrm{Mn}}_{\mathrm{Ga}}$ acceptors, no sign saturation. Room ferromagnetism is expected for 10% concentration these moments. Our magnetotransport magnetization are...
The search for novel magnetic quantum phases, phenomena and functional materials has been guided by relativistic magnetic-symmetry groups in coupled spin real space from the dawn of field 1950s to modern era topological matter. However, cannot disentangle non-relativistic phases effects, such as recently reported unconventional physics collinear antiferromagnets typically weak spin-orbit coupling phenomena. Here we discover that more general symmetries decoupled crystal categorize magnetism...
We introduce a new class of spintronic devices in which spin-valve-like effect results from strong spin-orbit coupling single ferromagnetic layer rather than injection and detection spin-polarized current by two coupled ferromagnets. The is observed normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior caused the interplay anisotropic density states (Ga,Mn)As with respect to magnetization direction two-step reversal process this material.
Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We brought the together to realize an all-semiconductor effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems original Datta-Das transistor concept demonstrates utility microelectronics. The devices use diffusive transport operate without electrical current, i.e., Joule...
Building upon the success and relevance of 2014 Magnetism Roadmap, this 2017 Roadmap edition follows a similar general layout, even if its focus is naturally shifted, different group experts and, thus, viewpoints are being collected presented. More importantly, key developments have changed research landscape in very relevant ways, so that novel view onto some most crucial warranted, article timely endeavour. The change hereby not exclusively scientific, but also reflects magnetism related...