Increasing demand for higher energy efficiency calls waste heat recovery technology. Thus, facilitating practical thermoelectric generation systems is strongly desired. One option enhancing the power factor, S2/r, where S Seebeck coefficient and r electrical resistivity, although it still challenging because of trade-off between r. We demonstrate that enhanced S2/r can be achieved by incorporating magnetic interaction in ferromagnetic metals via spin fluctuation arising from itinerant...

We systematically investigated the electronic structure of full-Heusler alloys with valence electron counts per formula unit 24 by using first-principles calculation. found various semiconducting flat bands at bottom conduction band. In terms low toxicity and cost, we focused on Fe2TiSn Fe2TiSi. that they could possess high thermoelectric power ranging from -300 to -160 µV/K electron-carrier concentrations 1×1020 1×1021 cm-3 around room temperature. Our results also suggest Fe2TiSn1-xSix...

We report on the emergence of spontaneously rotating clusters in active emulsions. Ensembles self-propelling droplets sediment and then self-organise into planar, hexagonally ordered which hover over container bottom while spinning around plane normal. This effect exists for symmetric asymmetric arrangements isotropic is therefore not caused by torques due to geometric asymmetries. found, however, that individual exhibit a helical swimming mode small window intermediate activity force-free...

We employ antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us directly link broadening NiFe hysteresis loop its shift (exchange bias) rotation pinning IrMn. At higher temperatures, broadened loops show zero shift, which correlates with observation fully rotating inside film. The...

Metal silicide-based thermoelectric (TE) materials have attracted attention owing to low toxicity and high chemical stability. Here, we demonstrate that ytterbium silicon-germanium, Yb(Si1−xGex)2−δ, shows a large Seebeck coefficient (S) accompanied by metal-like electrical conductivity (σ) attributed the intermediate valence behavior of Yb (Yb2+/Yb3+). We revealed x = 0.5, i.e., YbSiGe, is best composition with highest power factor (S2σ) 3.6 mW m−1 K−2 at room temperature, which comparable...

Metal silicide‐based thermoelectric (TE) materials have attracted attention in the past two decades, because they are less toxic, with low production cost and high chemical stability. Here, we study TE properties of ytterbium silicide YbSi 2 a specific layered structure mixed valence state Yb 2+ 3+ . exhibits large Seebeck coefficient, S , accompanied by electrical conductivity, σ leading to power factor, 2.2 mW m −1 K −2 at room temperature, which is comparable those state‐of‐the‐art such...

We demonstrate the improved power factor in full-Heusler Fe2VAl1−xSix thin films using precise composition-control with off-axis sputtering method. The valence electron concentration per atom was varied from 5.9 to 6.1 by manipulating target substrate distance addition changing composition, resulting an up 3.0 mW/K2 m off-stoichiometric composition of Fe1.93V1.05Al0.77Si0.24. had a polycrystalline structure average grain size 40–50 nm. cumulative lattice thermal conductivity calculation as...

Thermoelectric properties of a semiconducting silicide, $\mathrm{C}{\mathrm{a}}_{3}\mathrm{S}{\mathrm{i}}_{4}$, were investigated by first-principles calculations. The calculation results revealed that $\mathrm{C}{\mathrm{a}}_{3}\mathrm{S}{\mathrm{i}}_{4}$ has relatively low lattice thermal conductivity around $1.2\phantom{\rule{0.16em}{0ex}}\mathrm{W}{\mathrm{m}}^{\ensuremath{-}1}{\mathrm{K}}^{\ensuremath{-}1}$ at 800 K. Seebeck coefficients and the electrical conductivities evaluated using...

We investigate the thickness and temperature dependence of a series Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying ratio ferromagnet/antiferromagnet (tFM/tAFM) in order to explore exchange coupling strengths tunneling anisotropic magnetoresistance (TAMR) devices. Specific values tFM/tAFM lead four distinct scenarios specific electric responses moderate magnetic fields. The characteristic measured TAMR signal on applied voltage allows us confirm its persistence up room despite an...

We investigated thermoelectric properties of full-Heusler type Fe2VAl thin films. In order to achieve high Seebeck coefficient (S) and low resistivity (ρ) with thermal conductivity (κ), we fabricated films a MgO seed layer annealed them at 800℃. The the annealing process transform into L21-ordered Heusler structure. show S 59.5 µV/K ρ 3.14 µV m together κ 4.43 W/m•K, which results in ZT as 0.079. considerably small compared one bulk samples may originate from an enhancement phonon scattering...

Thermal boundary resistance (TBR) was controlled by changing the Ge ratio in a MnSi1.7-based nanocomposite with SiGe to investigate effects of TBR on thermal transport. We demonstrated continuous reduction conductivity down 1.2 W/Km, which is less than minimum MnSi1.7, even granular structures: practical forms thermoelectric (TE) technologies. The between MnSi1.7 and estimated quantitatively multilayered structures be as high 5.6 × 10−9 m2 K/W detailed analysis suggests that 20%–30%...

In this study, various Fe-based thermoelectric full-Heusler thin films were fabricated on MgO substrates by a post-annealing process. It is clarified that crystal growth through the process prevented both an initial crystallization and lattice mismatch between substrate. One of materials, namely, Fe2TiAl, was almost epitaxially grown substrate from amorphous state owing to small less than 3%. The properties Fe2TiAl-based modulated changing material composition. We found they strongly depend...

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Abstract Fe 2 TiSi full-Heusler thin films were synthesized with a homogeneous single-phase structure and the composition was controlled in wide range by deposition techniques. By detailed tuning of film composition, Seebeck coefficient reached −184 μ V K −1 , which is almost maximum for alloys, power factor 3.9 mW −2 m . The thermal conductivity 3.5 W first-principles calculations clarified that this small value may be due to alloy scatterings. Consequently, ZT 0.36 at room temperature...

We report a lowered lattice thermal conductivity in nm-scale MnSi1.7/Si multilayers which were fabricated by controlling diffusions of Mn and Si atoms. The thickness the constituent layers is 1.5–5.0 nm, comparable to phonon mean free path both MnSi1.7 Si. By applying above nanostructures, we reduced down half that bulk composite materials. obtained value 1.0 W/K m experimentally observed minimum MnSi1.7-based materials without any heavy element doping close conductivity. attribute...

An adequate vegetable intake provides essential nutrients, and the importance of has been emphasized.Picky eating behaviour, which is a problem in children with intellectual disability (ID), may result lack intake.The aim this research was to investigate how parental psychological factors, e.g.self-efficacy, outcome expectancy, associated ID.This crosssectional study conducted on school from sixteen special needs schools Ibaraki prefecture two other areas.A questionnaire self-efficacy brief...

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Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge spin of carriers. structures used modern hard drive read-heads magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel antiparallel configurations, yielding the desired giant or tunneling magnetoresistance effect. In this paper we demonstrate >100$% spin-valve-like signal...

The so-called power factor S2σ (with S the Seebeck coefficient and σ electrical conductivity) determines generation performance of thermoelectric (TE) devices. Since have a trade-off relationship as function carrier concentration, it has been difficult to enhance S2σ. Metal silicide-based TE materials attracted attention in past two decades, because they are less toxic than conventional (such Bi2Te3 PbTe), involve low production cost show high chemical stability. study by Ken Kurosaki...

Ytterbium silicide-based thermoelectric materials have attracted attention because they exhibit large power factors owing to absolute values of their Seebeck coefficient as well high electrical conductivity. Here, we demonstrate that, in the Yb(Si1−xGex)2 system, by controlling valence fluctuation, combine two phenomena, namely, Kondo effect and suppression spin fluctuation. This leads a density states fluctuation 4f electrons, thereby resulting with extremely low resistivity. Consequently,...

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