Christian Enz

ORCID: 0000-0002-9968-5278
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About
Contact & Profiles
Research Areas
  • Advancements in Semiconductor Devices and Circuit Design
  • Radio Frequency Integrated Circuit Design
  • Analog and Mixed-Signal Circuit Design
  • Semiconductor materials and devices
  • Advancements in PLL and VCO Technologies
  • Low-power high-performance VLSI design
  • Silicon Carbide Semiconductor Technologies
  • Radiation Effects in Electronics
  • CCD and CMOS Imaging Sensors
  • Acoustic Wave Resonator Technologies
  • Advanced MEMS and NEMS Technologies
  • Semiconductor Quantum Structures and Devices
  • Quantum and electron transport phenomena
  • Wireless Body Area Networks
  • Microwave Engineering and Waveguides
  • Advanced Memory and Neural Computing
  • Advanced Power Amplifier Design
  • Energy Harvesting in Wireless Networks
  • Ferroelectric and Negative Capacitance Devices
  • Electrostatic Discharge in Electronics
  • Energy Efficient Wireless Sensor Networks
  • Particle Detector Development and Performance
  • Sensor Technology and Measurement Systems
  • Neuroscience and Neural Engineering
  • Muscle activation and electromyography studies

École Polytechnique Fédérale de Lausanne
2016-2025

University of Neuchâtel
2015-2021

IMEC
2021

KU Leuven
2021

Vrije Universiteit Brussel
2021

École Polytechnique
2017-2018

Laboratoire des Sciences de l’Information et de la Communication
2017

Laboratoire d'Informatique Fondamentale de Lille
2017

Swiss Center for Electronics and Microtechnology (Switzerland)
2005-2015

École Normale Supérieure - PSL
2013-2015

In linear IC's fabricated in a low-voltage CMOS technology, the reduction of dynamic range due to dc offset and low frequency noise amplifiers becomes increasingly significant. Also, achievable amplifier gain is often quite such since cascoding may not be practical circuit option resulting output signal swing. this paper, some old new techniques are described for compensation amplifier's most important nonideal effects including (mainly thermal 1/f noise), input-referred voltage as well...

10.1109/5.542410 article EN Proceedings of the IEEE 1996-01-01

In all-wireless networks a crucial problem is to minimize energy consumption, as in most cases the nodes are battery-operated. We focus on of power-optimal broadcast, for which it well known that broadcast nature radio transmission can be exploited optimize consumption. Several authors have conjectured NP-complete. provide here formal proof, both general case and geometric one; former case, network topology represented by generic graph with arbitrary weights, whereas latter Euclidean...

10.1145/570645.570667 article EN Proceedings of the 28th Annual International Conference on Mobile Computing And Networking 2002-09-23

A wireless sensor network consists of many energy-autonomous microsensors distributed throughout an area interest. Each node monitors its local environment, locally processing and storing the collected data so that other nodes can use it. To optimize power consumption, Swiss Center for Electronics Microtechnology has developed WiseNET, ultralow-power platform implementation networks achieves low-power operation through a careful codesign approach. The WiseNET uses approach combines dedicated...

10.1109/mc.2004.109 article EN Computer 2004-08-01

This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from Boltzmann at deep-cryogenic temperatures. Below critical temperature, derived saturates to value is independent of temperature and proportional characteristic decay band tail. The proposed expression tends when tail zero. Since saturation universally observed different types (regardless dimension or semiconductor material), this suggests an intrinsic mechanism responsible

10.1109/led.2019.2963379 article EN cc-by IEEE Electron Device Letters 2019-12-31

This paper presents the basis of modeling MOS transistor for circuit simulation at RF. A physical equivalent that can easily be implemented as a Spice subcircuit is first derived. The includes substrate network accounts signal coupling occurring HF from drain to source and bulk. It shown latter mainly affects output admittance Y22. bias geometry dependence components, leading scalable model, are then discussed with emphasis on resistances. Analytical expressions Y parameters established...

10.1109/4.823444 article EN IEEE Journal of Solid-State Circuits 2000-02-01

A highly sensitive CMOS chopper amplifier for low-frequency applications is described. It realized with a second-order low-pass selective using continuous-time filtering technique. The circuit has been integrated in 3-/spl mu/m p-well technology. DC grain 38 dB 200-Hz bandwidth. equivalent input noise 63 nV//spl radic/Hz and free from 1/f noise. offset below 5 /spl mu/V tuning error less than 1%. consumes only 34 mu/W.

10.1109/jssc.1987.1052730 article EN IEEE Journal of Solid-State Circuits 1987-06-01

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium (4.2 K) depletion strong inversion and in linear saturation regimes. The is developed relying on 1D Poisson equation drift-diffusion transport mechanism. validity of Maxwell-Boltzmann approximation demonstrated limit zero Kelvin as result dopant freeze-out cryogenic equilibrium. Explicit expressions are then derived including incomplete...

10.1109/ted.2018.2854701 article EN IEEE Transactions on Electron Devices 2018-08-01

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical technological parameters are extracted 300, 77, 4.2 K from dc measurements made on various geometries. simplified-EKV model is used to accurately capture the characteristics this down demonstrate impact temperatures essential analog figures-of-merit. A new body-partitioning methodology then...

10.1109/jeds.2018.2817458 article EN cc-by-nc-nd IEEE Journal of the Electron Devices Society 2018-01-01

BSIM6 is the latest industry-standard bulk MOSFET model from BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought BSIM4. shows excellent source-drain symmetry during both dc small signal analysis, thus giving results simulations, e.g., harmonic balance simulation. fully scalable with geometry, biases, temperature. has a physical charge-based capacitance including polydepletion quantum-mechanical effect thereby in...

10.1109/ted.2013.2283084 article EN IEEE Transactions on Electron Devices 2014-01-24

This paper presents the first experimental investigation and physical discussion of cryogenic behavior a commercial 28 nm bulk CMOS technology. Here we extract fundamental parameters this technology at 300,77 4.2 K based on DC measurement results. The extracted values are then used to demonstrate impact temperatures essential analog design parameters. We find that simplified charge-based EKV model can accurately predict behavior. represents main step towards analog/RF circuits integrated in...

10.1109/essderc.2017.8066592 preprint EN 2017-09-01

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close band edge modify saturating temperature behavior observed cryogenic measurements. Dopant freezeout, bandgap widening, and uniformly distributed do not change qualitative over temperature. Care should be taken because dopant freezeout results different definition voltage. Using definitions changes significantly current level. The proposed is experimentally validated with...

10.1109/jeds.2020.2989629 article EN cc-by IEEE Journal of the Electron Devices Society 2020-01-01

New applications such as wireless integrated network sensors (WINS) require radio-frequency transceivers consuming very little power compared to usual mainstream applications, while still working in the ultra-high-frequency range. For this kind of application, LC-tank-based local oscillator remains a significant contributor overall receiver consumption. This statement motivates development good on-chip varactors available standard process. paper describes and compares solutions realize...

10.1109/4.826815 article EN IEEE Journal of Solid-State Circuits 2000-03-01

This chapter covers device and circuit aspects of low-power analog CMOS design. The fundamental limits constraining the design circuits are first recalled with an emphasis on implications supply voltage reduction. Biasing MOS transistors at very low current provides new features but requires dedicated models valid in all regions operation including weak, moderate strong inversion. Low-current biasing also has a influence noise matching properties. All these issues discussed, together...

10.1109/etlpds.1996.508872 article EN 2002-12-23

WiseMAC is a medium access control protocol designed for the WiseNET™ wireless sensor network. It based on CSMA and uses preamble sampling technique to minimize power consumed when listening an idle medium. A unique feature of this exploit knowledge schedule its direct neighbors in order use wake-up minimized size. This scheme allows not only reduce transmit receive consumption, but also brings drastic reduction energy wasted due overhearing. Backoff reservation schemes have been selected...

10.1145/958491.958531 article EN 2003-11-05

Inexact Circuits or circuits in which the accuracy of output can be traded for energy delay savings, have been receiving increasing attention late due to invariable inaccuracies designs as Moore's law approaches low nanometer range, and a concomitant growing desire ultra systems. In this paper, we present novel design-level technique called probabilistic pruning realize inexact circuits. Unlike previous techniques literature relied mostly on some form scaling operational parameters such...

10.1109/date.2011.5763130 article EN 2011-03-01

Energy-efficiency is a critical concern for many systems, ranging from Internet of things objects and mobile devices to high-performance computers. Moreover, after 40 years prosperity, Moore's law starting show its economic technical limits. Noticing that circuits are over-engineered applications error-resilient or require less precision than offered by the existing hardware, approximate computing has emerged as potential solution pursue improvements digital circuits. In this regard,...

10.1109/tvlsi.2017.2657799 article EN IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2017-02-10

This letter reports for the first time a full experimental study of performance boosting tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss importance matching between ferroelectric NC device to achieve hysteretic non-hysteretic characteristics. PZT capacitors are connected gate three terminals TFETs partial or conditions amplification stability obtained. First, we demonstrate characteristics NC-TFETs. The main is obtained NC-TFET, where ON-current increased...

10.1109/led.2017.2734943 article EN IEEE Electron Device Letters 2017-08-02

The current trend for deep learning has come with an enormous computational need billions of Multiply-Accumulate (MAC) operations per inference. Fortunately, reduced precision demonstrated large benefits low impact on accuracy, paving the way towards processing in mobile devices and IoT nodes. To this end, various precision-scalable MAC architectures optimized neural networks have recently been proposed. Yet, it hard to comprehend their differences make a fair judgment relative as they...

10.1109/jetcas.2019.2950386 article EN cc-by IEEE Journal on Emerging and Selected Topics in Circuits and Systems 2019-10-30

This article presents the s implified charge-based Enz-Krummenacher-Vittoz (EKV) [11] metal-oxide-semiconductor field-effect transistor (MOSFET) model and shows that it can be used for advanced complementary (CMOS) processes despite its very few parameters. The concept of an inversion coefficient (IC) is first introduced as essential design parameter replaces overdrive voltage V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sup> -V...

10.1109/mssc.2017.2712318 article EN IEEE Solid-State Circuits Magazine 2017-01-01
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