A5053654772- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Advanced MEMS and NEMS Technologies
- Ferroelectric and Negative Capacitance Devices
- Mechanical and Optical Resonators
- Advanced Memory and Neural Computing
- Acoustic Wave Resonator Technologies
- Quantum and electron transport phenomena
- Silicon Carbide Semiconductor Technologies
- Analytical Chemistry and Sensors
- Transition Metal Oxide Nanomaterials
- Carbon Nanotubes in Composites
- Gas Sensing Nanomaterials and Sensors
- Photonic and Optical Devices
- Force Microscopy Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Graphene research and applications
- Ferroelectric and Piezoelectric Materials
- Microwave Engineering and Waveguides
- Magnetic properties of thin films
- 2D Materials and Applications
- Advanced Sensor and Energy Harvesting Materials
- 3D IC and TSV technologies
- MXene and MAX Phase Materials
École Polytechnique Fédérale de Lausanne
2016-2025
Neurocrine Biosciences (United States)
2025
Wagner College
2002-2024
State University of New York at Oswego
2022-2024
Pennsylvania State University
2008-2024
Gazi University
2024
Luleå University of Technology
2022-2024
Aurel Vlaicu University of Arad
2022-2024
Polis University
2024
NanoLab (United States)
2017-2024
Abstract Cortisol is a hormone released in response to stress and major glucocorticoid produced by adrenal glands. Here, we report wearable sensory electronic chip using label-free detection, based on platinum/graphene aptamer extended gate field effect transistor (EG-FET) for the recognition of cortisol biological buffers within Debye screening length. The device shows promising experimental features real-time monitoring circadian rhythm human sweat. We hysteresis-free EG-FET with voltage...
This work reports the first complete experimental demonstration and investigation of subthreshold swing, SS, smaller than 60 mV/decade, at room temperature, due to internal voltage amplification in FETs with a Metal-Ferroelectric-Metal-Oxide gate stack. The investigated p-type MOS transistor is dedicated test structure explore negative capacitance effect by probing between P(VDF-TrFE) SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>...
The gate-controllable complex conductivity of graphene offers unprecedented opportunities for reconfigurable plasmonics at THz and mid-IR frequencies. However, the requirement a gating electrode close to single `control knob' that this approach limits practical implementation performance graphene-controllable plasmonic devices. Herein, we report on stacks composed two or more monolayers separated by electrically thin dielectrics present simple rigorous theoretical framework their...
Cloud object stores such as Amazon S3 are some of the largest and most cost-effective storage systems on planet, making them an attractive target to store large data warehouses lakes. Unfortunately, their implementation key-value makes it difficult achieve ACID transactions high performance: metadata operations listing objects expensive, consistency guarantees limited. In this paper, we present Delta Lake, open source table layer over cloud initially developed at Databricks. Lake uses a...
Abstract Isolators, or optical diodes, are devices enabling unidirectional light propagation by using non-reciprocal materials, namely materials able to break Lorentz reciprocity. The realization of isolators at terahertz frequencies is a very important open challenge made difficult the intrinsically lossy radiation in current materials. Here we report design, fabrication and measurement isolator for circularly polarized waves based on magnetostatically biased monolayer graphene, operating...
The experimental characterization of the surface impedance monolayer graphene at micro and millimeter wave frequencies is addressed. Monolayer transferred on a substrate stack, which placed in cross-section rectangular waveguide. In fundamental mode, this setup equivalent to TE-polarized plane impinging under oblique incidence an infinite sheet, similarly, simple lumped element transmission-line model, that exactly represents electromagnetic problem study. Using we propose technique based...
Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break thermionic 60 mV/decade of subthreshold swing (SS) metal oxide semiconductor (MOSFETs) by using quantum mechanical band-to-band tunneling and excellent electrostatic control. Meanwhile, negative capacitance (NC) ferroelectrics has a promising performance booster MOSFETs to bypass aforementioned fundamental limit exploiting differential amplification gate voltage...
A physically based compact analytical single electron transistor (SET) model is proposed for hybrid CMOS-SET analog circuit simulation. The modeling approach on the "orthodox theory" of tunneling, and valid or multi gate, symmetric asymmetric devices can also explain background charge effect. parameters are physical device an associated parameter extraction procedure reported. characteristics produced by verified with Monte Carlo simulation large range drain to source voltages (|V/sub...
This work experimentally demonstrates, for the first time, that by integrating a thin ferroelectric layer into gate stack of standard MOS transistor one, it is possible to overcome 60 mV/decade subthreshold swing limit at room temperature MOSFET. We find sub-threshold swings as low 13 in Fe-FETs with 40 nm P(VDF-TrFE)/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> stack. The mechanism governing Fe-FET transistors negative...
In this letter, we present a novel device, the germanium electron-hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through bias-induced EH bilayer. The proposed architecture provides quasi-ideal alignment between path and electric field controlled by gate. device principle performances are studied 2-D numerical simulations. This allows interesting features in terms of low operating voltage (<; 0.5 V), due to its super-steep subthreshold slope (SS <sub...
In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on modulation of injected current. We explain superlinear onset output characteristics based occupancy function modulation. Thus, point out that, along with tunneling barrier transparency, availability carriers empty states, at beginning end path, respectively, should be always taken into account for proper modeling tunnel FETs.
In this paper, we report the basic design conditions and experimental confirmation of a temperature dependent negative capacitance (NC) effect in ferroelectric field-effect-transistor (Fe-FET). We find that internal voltage amplification peaks metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure are correlated with S-shape polarization versus electrical field characteristics. The is responsible for subthreshold swing reduction Fe-FET; cancels out when increased close to Curie...
This letter reports for the first time a full experimental study of performance boosting tunnel FETs (TFETs) and MOSFETs by negative capacitance (NC) effect. We discuss importance matching between ferroelectric NC device to achieve hysteretic non-hysteretic characteristics. PZT capacitors are connected gate three terminals TFETs partial or conditions amplification stability obtained. First, we demonstrate characteristics NC-TFETs. The main is obtained NC-TFET, where ON-current increased...
Wearable systems could offer noninvasive and real-time solutions for monitoring of biomarkers in human sweat as an alternative to blood testing. Recent studies have demonstrated that the concentration certain can be directly correlated their concentrations blood, making a trusted biofluid candidate diagnostics. We introduce fully on-chip integrated wearable sensing system track biochemical information at surface skin real time. This heterogeneously integrates, on single silicon chip,...
In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large unique design space. Transistors ferroelectrics could (i) enable better switch (i.e., offer steeper subthreshold swings), (ii) CMOS compatible, (iii) have multiple operating modes I-V characteristics also compact, 1-transistor, non-volatile storage elements, well...
Thermochromic GexV1−xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The were then characterized Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent effect Ge doping semiconductor-to-metal phase transition in vanadium oxide was investigated. shown to increase significantly upon (∼95 °C), while hysteresis width...
Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity ultra-miniaturization, low power operation, and high sensitivity, supported by complementary metal oxide semiconductor (CMOS) integration. This paper reports the first time, multianalyte sensing platform that incorporates performance, yield, robustness, three-dimensional-extended-metal-gate ISFETs (3D-EMG-ISFETs) realized postprocessing of conventional 0.18 μm CMOS...