Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the been explored for realizing multi-valued logic applications. Here we demonstrate a device based on phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley...

A listening test has been performed to investigate the relationship between human annoyance and amplitude modulation of wind turbine noise. To obtain sound samples for test, from a 1.5 MW in Korea was recorded. The strength defined terms depth spectrum, which approximated by assuming that are sinusoidally amplitude-modulated. stimuli tests were created reducing spectrum samples. total 30 participants involved tests. results indicate equivalent level noise both significantly contribute annoyance.

We present a 10-Gb/s optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.13-μm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. The OEIC consists of CMOS-compatible avalanche photodetector (CMOS-APD), transimpedance amplifier (TIA), an offset cancellation network, variable equalizer (EQ), limiting (LA), and output buffer. CMOS-APD provides high responsivity as well large photodetection bandwidth. TIA is composed...

We investigate a frequency up/down-converter based on single cascaded semiconductor optical amplifier (SOA)-electroabsorption modulator (EAM) configuration for bi-directional 60-GHz-band radio-on-fiber (RoF) system applications. SOA cross-gain modulation and photodetection in EAM are used up-conversion, nonlinearity is down-conversion. In our scheme, both 60-GHz local-oscillator (LO) signals IF optically transmitted from central station to base stations. characterize the dependence of...

We demonstrate single-mode extraction from multiple modes in a 30-GHz optoelectronic oscillator (OEO) by injecting OEO into an electrical oscillator. The is injection-locked one mode resulting oscillation. oscillation frequency can be tuned changing the frequency.

We investigate the area-dependent characteristics of photodetection frequency responses 850-nm silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. CMOS-compatible APDs (CMOS-APDs) based on a p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /n-well junction four different device areas are used for investigation, and we identify factors that influence goal achieving...

We demonstrate an integrated circuit (IC) implemented in 28-nm CMOS technology for Mach-Zehnder modulator (MZM) bias control. Our determines the optimal MZM voltage that provides largest optical modulation amplitude and maintains this by monitoring average modulated power. The controller IC consists of digital-to-analog converter, analog-to-digital trans-impedance amplifier, power detector, track-and-hold circuit, comparator, digital controller, all which are a single chip. With small...

The high optical responsivity of the InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels is reported. Experimental results verify that photovoltaic effect causing effective decrease threshold voltage responsible for photoresponse to a 1.55-μm illumination.

We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The includes inductive component delay, a current source photogenerated carriers, and several components that the device structure parasitic effects. provides accurate impedance characteristics photodetection frequency responses.

A new type of sampling error corrector for a time- to-digital converter (TDC) having multiphase reference clock and binary counter is demonstrated. With this corrector, errors caused by asynchronous TDC inputs are corrected without requiring additional counters or reclocking circuits. the implemented in 90-nm CMOS logic technology. It has 13.6-ps/least significant bit resolution 13-bit input dynamic range. consumes 18 mW from 1.2-V supply occupies 100 × 210 μm <sup...

A low-voltage phase-locked-loop (PLL) circuit with a supply-noise-compensated feedforward ring voltage-controlled oscillator (FRVCO) is demonstrated. The oscillation frequency fluctuation due to supply noise compensated by adjusting the ratio of driving strength in and direct paths FRVCO. prototype 400-MHz PLL operating at 0.65 V fabricated 180-nm standard CMOS process. Measurement results show that supply-noise compensation successfully achieved. Our consumes only 242.1 μW.

We present a linear equivalent circuit model for the depletion-type Si microring modulator (MRM). Our consists of three blocks: one parasitic components due to interconnects and pads, electrical elements core p-n junction, third lossy LC tank representing MRM optical modulation characteristics. Model parameter values are extracted from measurement fabricated device. Simulated characteristics with our show very good agreement measured results. Using model, we can analyze frequency response...

We have investigated the surfaces of rubbed polystyrene (PS) films in detail using atomic force microscopy and discovered a previously unknown surface feature: submicroscale meandering groove-like structures composed gravel-like grooves tens nanometers are present, oriented perpendicular to rubbing direction. This unusual morphology is significant departure from topographies observed so far for PS other polymer films, which usually only found parallel also conclude retardation analysis...

We demonstrate a millimeter-wave self-injection-locked (SIL) oscillator having long optical delay line as feedback route. In the SIL oscillator, part of output signal is self-injected into after passing through line, resulting in locked oscillation and phase-noise reduction. By controlling self-injection power, we achieve 30-GHz with sidemode suppression ratio larger than 50 dB about 18-dB reduction at 10-kHz frequency offset.

We demonstrate a new configuration for an optoelectronic self-injection-locked (SIL) oscillator, where part of the electrical output signal is self-injected after passing through long optical delay line phase-noise reduction. The SIL oscillator consists free-running and feedback loop. For compact low cost configuration, realized with InP HPT-based monolithic electrical-to-optical conversion carried out by two low-speed low-cost laser diodes. With this we achieve more than 55-dB reduction at...

We present a high-speed monolithically integrated optical receiver fabricated with 0.13-mum standard complementary metal-oxide-semiconductor (CMOS) technology. The consists of CMOS-compatible avalanche photodetector (CMOS-APD) and transimpedance amplifier (TIA). CMOS-APD provides high responsivity as well large bandwidth. Its bandwidth is further enhanced by the TIA having negative capacitance, which compensates undesired parasitic capacitance. With CMOS receiver, 4.25-Gb/s data are...

We present a CMOS integrated optical receiver having under-damped transimpedance amplifier (TIA) and avalanche photodetector (APD) realized in 65-nm technology. The TIA compensates the bandwidth limitation of APD provides enhanced performance with reduced power consumption better sensitivity compared previously reported techniques. successfully demonstrate 10-Gb/s 231-1 PRBS 12.5-Gb/s 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> -1...

The influence of self-heating on the static transmission characteristics depletion-type Si micro-ring modulators (MRMs) is investigated. Self-heating, caused by free-carrier absorption input light inside doped ring waveguide, increases effective refractive index waveguide and results in red-shifted resonance wavelength. This phenomenon modeled based coupled-mode equation with a newly-introduced coefficient R. accuracy our model confirmed measurement. In addition, dependence R device size...

We demonstrate 60-GHz band bidirectional radio-on-fiber (RoF) links based on InP-InGaAs heterojunction phototransistor (HPT) optoelectronic mixers. They employ remote up/down conversion scheme with optical local oscillator signals distributed from the central office and intermediate frequency (IF) fiber transmission for both up- down-links. Since conversions photodetection are carried out by a single HPT mixer, base station architecture is greatly simplified. In order to validate its...

We demonstrate a new type of adaptive continuous-time linear equalizer (CTLE) based on asynchronous undersampling histograms. Our CTLE automatically selects the optimal equalizing filter coefficient among several predetermined values by searching for that produces largest peak value in histograms obtained with undersampling. This scheme is simple and robust does not require clock synchronization its operation. A prototype chip realized 0.13-μm CMOS technology successfully achieves...

We investigate the effects of parasitic resistance on performance silicon avalanche photodetectors (APDs) fabricated in standard complementary metal-oxide-semiconductor (CMOS) technology. Two types CMOS-APDs based P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /N-well junction having two different resistances are realized, and their current-voltage characteristics, responsivities, gains, photodetection frequency responses, electrical...

We successfully demonstrate an optoelectronic oscillator (OEO) low radio-frequency(RF)-threshold gain and a level of spurious tones using semiconductor lasers under optical injection in dual fiber-loop configuration. Our 15-GHz OEO exhibits suppressed over 70 dB by dual-loop modulation, maintaining RF-threshold 27 phase noise 104 dBc/Hz at 10-kHz frequency offset.

A low-power 1.6-GHz phase-locked loop (PLL) based on a novel supply-regulated voltage-controlled oscillator (SR-VCO) including an active-loop filter (ALF) is realized. In this PLL, active RC combined with SR-VCO, achieving the advantages of ALF PLL without penalties in power consumption or phase noises. The has measured rms jitter 4.82 ps, and its core consumes 990 μW from 1-V supply while chip area 420 × 570 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...