A5026604485- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Advancements in Battery Materials
- Synthesis and properties of polymers
- Advanced Battery Materials and Technologies
- biodegradable polymer synthesis and properties
- Electron and X-Ray Spectroscopy Techniques
- Electronic and Structural Properties of Oxides
- Analytical Chemistry and Sensors
- Silicone and Siloxane Chemistry
- Supercapacitor Materials and Fabrication
- Advancements in Photolithography Techniques
- Ga2O3 and related materials
- DNA and Nucleic Acid Chemistry
- Graphene research and applications
- Biopolymer Synthesis and Applications
- Force Microscopy Techniques and Applications
- Silicon and Solar Cell Technologies
- Anodic Oxide Films and Nanostructures
- Polymer Surface Interaction Studies
- Photonic and Optical Devices
- Synthesis and Characterization of Heterocyclic Compounds
- Modular Robots and Swarm Intelligence
- Photochromic and Fluorescence Chemistry
Laboratoire Nanotechnologies et Nanosystèmes
2024
Centre de Nanosciences et de Nanotechnologies
2024
KU Leuven
2018-2022
IMEC
2018-2022
Ioffe Institute
2018
Graz University of Technology
2018
Technical University of Darmstadt
2018
Gwangju Institute of Science and Technology
2014-2016
Gwangju University
2014
We report the fabrication of nanoporous silicon (nPSi) electrodes via electrochemical etching to form a porous Si layer with controllable thickness and pore size. Varying time ethanolic HF concentration results in different surface morphologies, various degrees electrolyte access depending on characteristics. Optimizing condition leads well-developed nPSi electrodes, which have thick layers smaller diameter exhibit improved discharge behavior as anodes alkaline Si-air cells contrast flat...
Metal-air batteries continue to become attractive energy storage and conversion systems due their high power densities, safer chemistries, economic viability. Semiconductor-air - a term we first define here as metal-air that use semiconductor anodes such silicon (Si) germanium (Ge) have been introduced in recent years new high-energy battery chemistries. In this paper, describe the excellent doping-dependent discharge kinetics of p-type Ge semiconductor-air cell employing gelled KOH...
Abstract The quasi‐perpetual discharge behavior of Ge anodes in semiconductor–air batteries was first demonstrated our previous studies, marked by high anode utilization and a flat profile over long‐term operation. In this Article, we show the crystal orientation dependence p‐type anodes. general, at low‐index indices could operate milliampere‐scale current range power densities, stark contrast to current‐limited operation Si–air batteries.
Ge pyramid texturization has been demonstrated<italic>via</italic>photoelectrochemical etching in HCl solution.
We demonstrate that wet-chemical surface bromination is an effective and a simple etching method for Ge oxide removal, providing excellent reoxidation resistance. Oxide removal halide passivation n-type (100) were investigated using time-resolved photoluminescence X-ray photoemission spectroscopy (XPS). In contrast to HCl, HBr treated surfaces show strong decrease in minority carrier lifetime, pointing state spectrum modification. The results from XPS situ sample preparation confirm...
Herein, we investigate wet-chemical etching of Ge (100) in acidic H 2 O solutions for technologically advanced device processing. Nanoscale kinetics data were provided by inductively coupled plasma mass spectrometry (ICP-MS) measurements. Rotation rate- dependent measurement showed that the hydrodynamics system is important. The dependence etch rate on HCl concentration was considered range 0.001–1 M HCl. A stark difference morphologically >1 HCl, which resulted a rough surface confirmed...
In this atomic-scale study on wet etching, the importance of surface chemistry, in particular nature oxides, is demonstrated for technologically relevant group IV semiconductors, Ge and SiGe.
In this work the etching kinetics of Ge (100) is studied in acidic solutions containing and oxidizing agent. It shown that etch rate low etch-rate range controlled by concentration acid, agent hydrodynamics system. The surface termination during has strong impact on kinetics. Finally, we discuss stability water relate to solubility suboxides
We study the anisotropy in surface oxidation for Ge(100) and (110) HCl/H2O2 solution complemented by synchrotron X-ray photoemission spectroscopy (SXPS) measurements integrated with an situ etching chamber. Visual anisotropic demonstration is confirmed lithographic Ge nanowedges.
We report on the (electro) chemical etching behavior, surface morphology and composition of n-type Ge (100) in acidic halide solutions using various analytical spectroscopic techniques. The use an integrated chamber connected to X-ray photoelectron spectroscopy instrument exclude effect oxygen from atmosphere is highlighted.
Recently, Germanium (Ge) has gained a massive attention from different research fields like energy 1-2 , photonics 3-4 biomedicine 5 and most importantly, nanoelectronics 6 . Historically, Ge was the very first semiconductor utilized as key material for transistors by John Bardeen, William B. Shockley Walter H. Brattain but abandoned because of its low purity, narrow band gap chemically unstable oxide. 7 From being left behind, after silicon (Si) found way to fame, is now enjoying resurgence...
The goal towards miniaturization of silicon (Si) - based complementary metal-oxide semiconductor (CMOS) devices has challenged the industry in improving device performance while sustaining scale requirement. [1-2] In this perspective, Ge appears to be a suitable candidate replace Si due its higher electron and hole mobility than Si. To date, defect-free GeO x /Ge interface never been achieved so far terms uniformity, composition, reliability [3-5]. Hence, insight surface chemistry morphology...
In this atomic-scale study on technologically relevant group IV semiconductors, Ge and SiGe, we relate surface chemistry, in particular the nature of oxides, to wet etching kinetics. ICP-MS quantification HCl solution containing H 2 O 2 as oxidizing agent showed that Si bulk concentration strongly impacted Post operando synchrotron XPS provided insight into oxide chemistry involved process: a non-homogeneous porous layer with depletion components at outer due pull out effects.
Over the decades, Si-based complementary metal–oxide semiconductor (CMOS) technology has challenged industry in improving device performance while maintaining scaling requirements. However, use of group IV as a channel material is reaching its ultimate limit due to physical complications, such gate leakage, parasitic resistance/capacitance and size effects [1]. Some workaround solutions have implemented trigate structures, novel gate-all-around (GAA) nanowire or nanosheet devices are also...