A5080542319- Semiconductor materials and devices
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor Quantum Structures and Devices
- Machine Learning in Materials Science
- X-ray Spectroscopy and Fluorescence Analysis
- Silicon Nanostructures and Photoluminescence
- Surface and Thin Film Phenomena
- Semantic Web and Ontologies
- GaN-based semiconductor devices and materials
- Advanced X-ray Imaging Techniques
- Force Microscopy Techniques and Applications
- Luminescence Properties of Advanced Materials
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Electron Microscopy Techniques and Applications
- Ion-surface interactions and analysis
- Glass properties and applications
- Cerebrospinal fluid and hydrocephalus
- Thin-Film Transistor Technologies
- Electronic and Structural Properties of Oxides
- Topic Modeling
- Web Data Mining and Analysis
- Traumatic Brain Injury and Neurovascular Disturbances
- Plasma Diagnostics and Applications
- Mechanical and Optical Resonators
National Institute for Materials Science
2015-2025
Soochow University
2020
University of Tsukuba
2018
University of Manchester
2005-2013
Photonic Science (United Kingdom)
2012
SPring-8
1999-2007
Japan Synchrotron Radiation Research Institute
1999-2007
University of Tsukuba Hospital
2007
Astronomy and Space
2006
RIKEN
1992-2005
The single electron transistor (SET) is fabricated using the scanning tunneling microscope (STM) as a fabrication process, and SET operates at room temperature. Using STM tip cathode, surface of titanium metal can be oxidized, few tens nanometer wide oxidized line made. small island region ∼30×∼35 nm2 formed by line. Coulomb staircase 150 mV period observed in current–voltage characteristics
Solvent-free, nonvolatile, room-temperature alkylated-π functional molecular liquids (FMLs) are rapidly emerging as a new generation of fluid matter. However, precision design to tune their physicochemical properties remains serious challenge because the governed by subtle π-π interactions among π-units, which very hard control and characterize. Herein, we address issue probing with highly sensitive pyrene-fluorescence. A series alkylated pyrene FMLs were synthesized. The photophysical...
The local structure of an optically active center in erbium-doped zinc oxide (ZnO:Er) thin film produced by a laser ablation technique and its optical activation process are investigated Er LIII-edge x-ray absorption fine analysis using synchrotron radiation as source. In as-ablated ZnO:Er film, has approximately five-fold coordination O surrounded eight other atoms second-nearest neighbors. high-order decreases the Er-related photoluminescence (PL) intensity due to undesirable crystal field...
A new approach to dry etching of GaAs, digital etching, has been demonstrated. In the etchant and an energetic beam, which induces chemical sputtering at surface, alternately impinge onto surface. Electrons Cl2 gas were used as beam etchant, respectively, in present experiment. Etching rates 1/3 monolayer/cycle, independent flux electron current density, obtained. The results show that inherent self-limiting mechanism is involved process limited by adsorption etchant. This technique expected...
The formation of a metastable supercooled alkyl-π molecular liquid was prohibited by subtle alteration the structure.
This study is dedicated to assessing the capabilities of large language models (LLMs) such as GPT-3.5-Turbo, GPT-4, and GPT-4-Turbo in extracting structured information from scientific documents materials science. To this end, we primarily focus on two critical tasks extraction: (i) a named entity recognition (NER) studied physical properties (ii) relation extraction (RE) between these entities. Due evident lack datasets within Materials Informatics (MI), evaluated using SuperMat, based...
The spontaneous lifetime of injected carriers in GaAs–Ga1-xAlx As double-heterostructure lasers is examined relation to the current injection levels. It shown that at threshold proportional Jth−1/2 with a 2×1017/cm3 Si-doped active region. From proportionality constant effective recombination Beff estimated be 9.0×10−11 cm3/sec, which agrees quite well theoretical value for band-to-band transitions.
This paper reviews PoLyInfo, which is a polymer database of National Institute for Materials Science Japan, containing more than half million data points, from the perspective editor. In particular, we describe how human-readable information provided by graphical user interface (GUI) curated, compiled, and displayed on GUI, it can be used retrieval. We also curation policy observed through search functions tables, show unique taxonomy various polymers. The status polymers their potential...
Valency of Ce and Pr in $L{\mathrm{Ru}}_{4}{\mathrm{P}}_{12}$ $(L=\mathrm{Ce}$ Pr) was studied by ${L}_{2,3}$-edge x-ray absorption near-edge structure (XANES) spectroscopy. The $\mathrm{Ce}{\ensuremath{-}L}_{3}$ XANES spectrum suggests that is mainly trivalent, but the $4f$ state strongly hybridizes with ligand orbitals. band gap ${\mathrm{CeRu}}_{4}{\mathrm{P}}_{12}$ seems to be formed strong hybridization electrons. $\mathrm{Pr}{\ensuremath{-}L}_{2}$ spectra indicate exists trivalent over...
We used multiple energy x-ray holography (MEXH) to image the local atomic environment of Zn atoms doped in a GaAs wafer using synchrotron radiation and multielement solid-state detector. The obtained images revealed that occupied substitutional site. By comparison reconstructed 1.41 \AA{} above below emitter atom, suppression twin due MEXH was confirmed experimentally for certain atoms.
Two dominant deep electron traps, named ME3 and ME6, in Si-doped AlxGa1−xAs grown by MBE have been studied Deep Level Transient Spectroscopy (DLTS) photoluminescence measurements. The change of the two trap concentrations with growth conditions alloy composition, effects them on intensity are described. concentration shows strong composition dependence has a maximum nearly equal to doping at x about 0.4. depends linearly concentration. ME6 strongly temperature above 720 °C. Group V/III beam...
While the importance of a systematic overview scientific data and demands toward integration are increasing, capitalization confidentiality also emerging competitively. X-ray absorption spectroscopy has strong tradition sharing, as cross-referencing enhances detailed understanding obtained spectra. physically integrating databases in various formats is impractical, system been successfully developed that allows cross-searching among Japanese, USA European cyberspace. This achievement made...
A scanning tunneling microscope dedicated to in situ experiments under the irradiation of highly brilliant hard-X-rays synchrotron radiation has been developed. In microscopy (STM) observation was enabled by developing an accurate alignment system ultrahigh vacuum. Despite noisy conditions facility and load around probe tip, STM images were successfully obtained at atomic resolution. Tip-current spectra for Ge nano-islands on a clean Si(111) surface changing incident photon energy across...
This paper reviews charges that locally functionalize materials. Microscopic analyses and operation of using various scanning probe microscopy (SPM) techniques have revealed static, quasi-static/quasi-dynamic dynamic charge behaviours. Charge-sensitive SPM has allowed for the visualization distribution functionalized in electronic devices. When used as bit data a memory system, can be operated by SPM. The behaviour is discussed here. In data-writing process, spatially dispersive rather than...
The local structure of erbium-doped silicon produced by the laser ablation technique is investigated Er LIII-edge x-ray absorption fine analysis. combined analysis extended and an near-edge simulation based on multiple-scattering theory reveals most probable atomic coordination optically active center; bonded with six oxygen atoms has a C4v symmetry. optical activation process this system also discussed. Si target 10 wt% Er2O3 two kinds structures, C-rare-earth grain another phase...
Low-temperature (∼4 K) photoluminescence of lightly Si-doped AlxGa1−xAs grown by molecular beam epitaxy has been studied. The defect-related emissions, due to the defect exciton (d, X) and complex (d), have identified. peak energies these which are 1.505 eV 1.474 (d) for GaAs, determined as a function mole fraction x ( x<0.45). energy difference between donor–bound-exciton (BE) defect-exciton is almost constant (∼9 meV). In contrast, BE defect-complex increases from 40 meV at x=0...
The automatic extraction of materials and related properties from the scientific literature is gaining attention in data-driven science (Materials Informatics). In this paper, we discuss Grobid-superconductors, our solution for automatically extracting superconductor material names respective text. Built as a Grobid module, it combines machine learning heuristic approaches multi-step architecture that supports input data raw text or PDF documents. Using built SuperCon2, database 40324...