A5006003149- ZnO doping and properties
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Optical Coatings and Gratings
- Perovskite Materials and Applications
- Transition Metal Oxide Nanomaterials
- GaN-based semiconductor devices and materials
- Copper-based nanomaterials and applications
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- Advanced Memory and Neural Computing
- 2D Materials and Applications
- Photonic Crystals and Applications
- Ferroelectric and Negative Capacitance Devices
- Quantum Dots Synthesis And Properties
- Advanced Photocatalysis Techniques
- Gold and Silver Nanoparticles Synthesis and Applications
- Plasmonic and Surface Plasmon Research
- Ferroelectric and Piezoelectric Materials
- Ion-surface interactions and analysis
- Chalcogenide Semiconductor Thin Films
- Carbon Nanotubes in Composites
- Bluetooth and Wireless Communication Technologies
National Institute of Technology Nagaland
2014-2025
National Institute of Technology Agartala
2012-2015
Jadavpur University
2012
Sri Sivasubramaniya Nadar College of Engineering
2012
Abstract The glancing angle deposition technique has been employed to synthesize TiO 2 nanowire (NW) arrays which have characterized by x-ray diffraction, field emission-scanning electron microscopy and high resolution transmission microscopy. Optical absorption measurements show the edge at 3.42 eV 3.48 for thin film (TF) NW, respectively. blue shift in band is attributed quantum confinement NW structures. Photoluminescence measurement revealed oxygen-defect-related emission 425 nm (∼2.9...
Vertically oriented TiO2 nanowire (NW) arrays were fabricated by glancing angle deposition technique. Field emission-scanning electron microscopy shows the formation of two different diameters ∼80 nm and ∼40 NW for 120 460 rpm azimuthal rotation substrate. The x-ray diffraction Raman scattering depicted presence rutile anatase phase TiO2. overall intensity decreased with diameter. role phonon confinement in peaks has been discussed. red (7.9 cm−1 Eg) blue (7.4 Eg, 7.8 A1g) shifts frequencies...
Axial NiO/β-Ga2O3heterostructure (HS) nanowires (NWs) array was fabricated on Si substrate by catalytic free and controlled growth process called glancing angle deposition technique. The field emission scanning electron microscope image shows the formation of well aligned vertical NWs. A typical high resolution transmission confirms axial HS NWs consisting ofβ-Ga2O3NW at top NiO NW bottom with an overall length ∼213 nm. large photo absorption also photoemission observed for NiO/β-Ga2O3HS as...
Photodetector (PD) based on axial n-ZnO/p-CuO heterostructure (HS) nanowires (NWs) array was fabricated Si substrate by using glancing angle deposition (GLAD) technique. The field emission scanning electron microscope (FE-SEM) image shows the formation of a well-aligned and vertical NW structure. A typical high-resolution transmission (HR-TEM) confirms an HS consisting ZnO at top CuO bottom. twofold enhanced photo-absorption observed for as compared to pristine NWs. Moreover, X-ray...
We have synthesized perpendicular SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> nanowire (NW) arrays on Si substrates and investigated them using scanning electron microscopy. Transmission microscopy energy-dispersive spectroscopy been used to investigate the single NW structure. A near-infrared emission at 700 nm is observed. In/SiO thin film (TF) contacts exhibit Schottky behavior. The NW-based devices show six-fold improvements...
A UV detector was fabricated using glancing angle deposition (GLAD)-synthesized TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanowires (NWs) over spin-coated reduced graphene oxide (RGO) thin films (TFs) on a Si substrate. The field-emission scanning electron microscopy (FE-SEM) images showed that NWs were grown with length of ~140 nm. amorphous in nature, as depicted by the selected area diffraction (SAED) pattern which also...
Abstract NiO nanoparticles (NPs) synthesized using glancing angle deposition (GLAD) technique over MgZnO thin film was used to design a novel memory device. The NPs with average diameter ~ 9.5 nm uniformly distributed the surface. film/NiO device when measured for C-V hysteresis characteristics at varying sweep voltage demonstrated charge trapping and de-trapping mechanism. Moreover, exhibited low interface states density (D it ) (1.45 × 10 eV − 1 cm 2 MHz large capacitive of 6 V ± 7 V....
A UV detector was fabricated based on vertical TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nanowires (NWs) grown over spin-coated graphene oxide (GO) thin film (TF) using glancing angle deposition technique. small dark current (0.0254 μA/cm at 4 V) observed for the Au/TiO NW/GO TF/Si device. Interface trap charges played a significant role in high photocurrent under 380 nm light illumination, which leads to trap-assisted...
UV-A photodetector (PD) based on axial n-ZnO/p-CuO heterostructure (HS) nanowires (NWs) array was fabricated using GLAD (glancing angle deposition) technique. The high resolution transmission electron microscope (HR-TEM) images confirmed the formation of HS NWs. PD shows a rectification ratio ~ 278, with low dark current 0.49 nA (at –1V) and fast photoresponse rise time fall 0.18 ms 0.24 respectively. A detectivity (0.05 TJones) noise equivalent power (70 pW) also observed at +3 V for...
In this study, the authors have reported impact of post-treatment via exposure to acid on single walled carbon nanotubes (SWNTs) thin film (TF) based SWNT/ZnO Nanowire (NW) broad band photodetector. The ZnO NWs were deposited SWNT (with and without acid-treated) using a simple catalytic free process called glancing angle deposition (GLAD) technique. Acid-treated samples warranted growth high quality over them. On fabricating photodetectors with acid-treated NW/SWNT TF heterostructure (HS)...
TiO2 nanowire (NW) array based visible light detectors with silver (Ag) Schottky electrode have been fabricated. NWs were synthesized by glancing angle deposition (GLAD) technique. The device conduction was examined. current suddenly jumped to 10 µA under halogen illumination from 100 nA dark for the applied potential of −5 V. photo detection within range 432–488 nm observed at +10 V top Ag electrode. showed very quick response on/off irradiation rise and fall time 2.5 2 s respectively.
The Er <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nanowires (NWs) arrays were synthesized on Si substrate by Glancing angle deposition technique. field emission gun scanning electron microscopy showed the vertically aligned highly porous NWs. transmission unsymmetrical growth of Polycrystalline nature NWs along with orientation crystal planes obtained from selected area...
The glancing angle deposition technique has been employed to synthesize SiOx-TiO2 heterostructure nanowire (NW) arrays on indium tin oxide (ITO) coated glass substrate. A field emission gun scanning electron microscopic image shows that the average diameter of NWs is ∼50 nm. Transmission microscopy images show formation NWs, which consist ∼180 nm SiOx and ∼210 long TiO2. selected-area diffraction amorphous nature synthesized was also confirmed by X-ray method. main band absorption edges at...
Here, we report on the fabrication and use of a silver (Ag) nanoparticle (NP) decorated TiO2 nanowire (NW)/reduced graphene oxide (RGO) thin-film (TF) heterostructure as UV detector, using controlled method called glancing angle deposition technique. Transmission electron microscope images show Ag NPs (size 7-13 nm) covering entire surface NWs. A high absorption well photoluminescence for NP-TiO2 NW/RGO TF sample reveals generation large number electron-hole pairs compared to bare NW. The...