A5056750755- Ga2O3 and related materials
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Fusion materials and technologies
- Hydraulic Fracturing and Reservoir Analysis
- Seismic Imaging and Inversion Techniques
- Gas Sensing Nanomaterials and Sensors
- Drilling and Well Engineering
- Magnetic confinement fusion research
- Advanced Memory and Neural Computing
- Advanced Photocatalysis Techniques
- Nanofluid Flow and Heat Transfer
- Acoustic Wave Resonator Technologies
- Lattice Boltzmann Simulation Studies
- Thermodynamic and Structural Properties of Metals and Alloys
- Transition Metal Oxide Nanomaterials
- Aerodynamics and Fluid Dynamics Research
- Ionosphere and magnetosphere dynamics
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Magnetic Field Sensors Techniques
- Quantum Dots Synthesis And Properties
- Groundwater flow and contamination studies
- Perovskite Materials and Applications
King Abdullah University of Science and Technology
2021-2025
National Institute of Technology Nagaland
2023-2025
Institute for Plasma Research
2018-2024
Tilka Manjhi Bhagalpur University
2024
University of Houston
2005
Abstract The monolithic three-dimensional vertical integration of thin-film transistor (TFT) technologies could be used to create high-density, energy-efficient and low-cost integrated circuits. However, the development scalable processes for integrating TFT devices is challenging. Here, we report indium oxide (In 2 O 3 ) TFTs on a silicon/silicon dioxide (Si/SiO substrate at room temperature. We use an approach that compatible with complementary metal–oxide–semiconductor (CMOS) stack ten...
Recent advancements in power electronics have been driven by Ga2O3-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching. However, integrating Ga2O3 devices with essential silicon CMOS logic circuits for advanced control poses fabrication challenges. Researchers introduced NMOS and pseudo-CMOS integration, but these may either consume more or increase the design complexity. Hence, this article proposes realized using heterogeneous 3D-stacked bilayer...
The presence of non‐interactive porosities spherical or near‐spherical type along with microporosity changes the effective elastic properties rock frame making pore geometries an important parameter, that must be taken in to account for estimating moduli by any theoretical medium models. Differential (DEM) model is one such which accounts due changing and facilitates inclusion two more than shapes. If bulk porosity water‐saturated P‐wave velocities are available, can estimate average aspect...
Abstract Crucial commercial and space applications require the detection of broadband ultraviolet (UV) rays spanning from UV-A to UV-C. In this study, authors demonstrate a UV photodetector employing p-type NiO x layer an n-type β -Ga 2 O 3 heterostructure in PIN configuration for first time. Simulations are conducted optimize doping concentration thickness layer, ensuring that (a) reasonable depletion width is maintained within UV-B light absorption; (b) anode ohmic contacts formed on...
Transferable Ga2O3 thin film membrane is desirable for vertical and flexible solar-blind photonics high-power electronics applications. However, epitaxially grown on rigid substrates such as sapphire, Si, SiC hinders its exfoliation due to the strong covalent bond between substrates, determining lateral device configuration also hardly reaching ever-increasing demand wearable foldable Mica substrate, which has an atomic-level flat surface high-temperature tolerance, could be a good candidate...
This study demonstrates pseudo-source-gated beta-gallium oxide (β-Ga2O3) metal semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated transistor (pseudo-SGT) architecture has a thin (∼11 nm) recessed channel design, effectively emulating conventional SGT characteristics without significantly compromising on-current. fabricated devices exhibit remarkable intrinsic gain of 104, low output conductance 10−8 S/mm, transconductance 10−3 and drain saturation voltage ∼1.5...
Abstract NiO nanoparticles (NPs) synthesized using glancing angle deposition (GLAD) technique over MgZnO thin film was used to design a novel memory device. The NPs with average diameter ~ 9.5 nm uniformly distributed the surface. film/NiO device when measured for C-V hysteresis characteristics at varying sweep voltage demonstrated charge trapping and de-trapping mechanism. Moreover, exhibited low interface states density (D it ) (1.45 × 10 eV − 1 cm 2 MHz large capacitive of 6 V ± 7 V....
Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films deposited using pulsed laser deposition. The device demonstrated an excellent breakdown ∼540 V at VGS = 0 and extremely low gate leakage current ∼10−7 mA/mm. Additionally, it exhibited subthreshold swing (SS) ∼167 mV/dec on/off ratio ∼106. growth fabrication MOSFETs are significant for high performance...
This study demonstrates the high-temperature operation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) based on nickel oxide (NiOx) as an intermediate gate oxide, achieving stable performance up to 400 °C. Compared control sample with only SiNx dielectric, proposed device exhibited significant improvements: (1) enhanced thermally induced VTH stability, (2) a flat transconductance (gm) curve indicating improved linearity, and (3) lower drain-to-source...
Abstract In this work, we report the reduced gate leakage current by using aluminum oxide (Al 2 O 3 ) and gallium (Ga as a bi-layer stack for GaN MOS-HEMT on silicon substrate up to 450 °C. The MOS-HEMTs suppressed more than four orders of magnitude compared only Al -based at low is attributed oxygen vacancies present in Ga layer, which effectively impede conduction path Poole-Frenkel emission high temperatures, thereby enhancing overall performance HEMTs.
Metal-semiconductor-metal (MSM) detectors based on Ti/Au and Ni/Au interdigitated structures were fabricated using 2.5 micrometer thick hexagonal boron nitride (h-BN) layer with both natural 10B-enriched boron. Current-voltage (I-V) current-time (I-t) curves of the recorded (IN) without (Id) neutron irradiation, allowing determination their sensitivity (S = (IN- Id)/Id= ΔI/Id). Natural h-BN exhibited high sensitivities 233 367% at 0 V bias under a flux 3 × 104 n/cm2/s, respectively. An...
Liquid lead-lithium (Pb-16Li) is of primary interest as one the candidate materials for tritium breeder, neutron multiplier and coolant fluid in liquid metal blanket concepts relevant to fusion power plants. For an effective reliable operation such high temperature systems, monitoring control critical process parameters essential. However, limited operational experience coupled with operating conditions corrosive nature Pb-16Li severely application commercially available diagnostic tools....
Herein, we demonstrated an “interposer”-style integration of In2O3 FET-based gate-driver circuitry wire bonded to AlGaN/GaN high electron mobility transistor (HEMT) device grown on a GaN-on-Si substrate, and its feasibility for power electronics was discussed. The normally-on HEMT exhibited threshold voltage −2.8 V, with maximum drain current density 265 mA/mm. also showed good off-state performance, such as ON/OFF ratio (Ion/Ioff) ∼1010 breakdown ∼445 V leakage ∼10−12 A. low-temperature...
Abstract Aluminum nitride (AlN) is a promising ultrawide bandgap material with significant advantages for power electronics and optoelectronic applications due to its high breakdown voltage, mobility, thermal conductivity. AlN Schottky barrier diodes metal semiconductor field effect transistors have shown potential but are limited by issues such as off-state leakage current complex structures achieve ohmic contacts. To address these challenges, we report on the fabrication characterization...
In this work, we report on the beta-gallium oxide (β-Ga2O3) monolithic bidirectional switch. The as-fabricated switch works enhancement mode operation with a threshold voltage of ∼4 V. Maximum drain current density 1.93 mA/mm is obtained 5 in has an ON/OFF ratio ∼107 ON-resistance 1.11 and 1.09 kΩ · mm forward reverse direction, respectively. However, diode mode, device shows 1.6 × 108 1.4 conduction modes, fabricated β-Ga2O3 then used to chop 60 Hz Alternating Current signal at chopping...
The ability to estimate water saturation for a thin‐bed reservoir from seismic is greatly enhanced if two rock‐property transforms are employed. One transform linearly relates the wet normal‐incident reflectivity [NI(wet)] hydrocarbon NI. other far‐trace amplitude NI each state. These derived trends that local prospect. With these and AVO gathers at prospect down‐dip water‐equivalent reservoir, test statistic can be developed differentiates economic gas fizz saturation. methodology doesn't...