A5043123454- ZnO doping and properties
- Ga2O3 and related materials
- Physics of Superconductivity and Magnetism
- GaN-based semiconductor devices and materials
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- Catalytic Processes in Materials Science
- TiO2 Photocatalysis and Solar Cells
- Quantum Dots Synthesis And Properties
- Air Quality and Health Impacts
- Gas Sensing Nanomaterials and Sensors
- Thermal and Kinetic Analysis
- Electronic and Structural Properties of Oxides
- Atmospheric chemistry and aerosols
- Heat Transfer and Optimization
- Radioactive element chemistry and processing
- Acoustic Wave Resonator Technologies
- COVID-19 impact on air quality
- Membrane Separation and Gas Transport
- Perovskite Materials and Applications
- Superconductivity in MgB2 and Alloys
- Water Quality Monitoring and Analysis
- Climate Change and Health Impacts
- Heat Transfer and Boiling Studies
- Chalcogenide Semiconductor Thin Films
King Abdullah University of Science and Technology
2019-2025
National University of Defense Technology
2024
Karolinska Institutet
2024
Institute of Atmospheric Physics
2018-2023
Chengdu University of Technology
2023
University of Chinese Academy of Sciences
2023
Chinese Academy of Sciences
2018-2023
Tongji University
2023
Chongqing University of Posts and Telecommunications
2023
Nanjing University of Science and Technology
2022
Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to traditional such as silicon, rendering them very promising for applications the fields of electronics and optoelectronics. Prominent examples include SiC, GaN, ZnO, diamond, which exhibit distinctive characteristics elevated mobility thermal conductivity. These facilitate operation a wide range devices, including energy-efficient bipolar junction transistors (BJTs) metal-oxide-semiconductor field-effect...
In this research, β-Ga2O3/NiO heterostructures were grown directly on CeO2 buffered Hastelloy flexible substrates. With pulsed laser deposition under high temperatures, as-grown β-Ga2O3 and NiO thin films have a preferred out-of-plane orientation along the ⟨−201⟩ ➎111➉ directions. This is due to ideal epitaxial ability of buffer layer, which serves as perfect template for growth single-oriented by creating constant gradient from (2.7 Å ➎001➉) (2.9 ➎110➉), eventually (3.04 ➎010➉). The...
Abstract The monolithic three-dimensional vertical integration of thin-film transistor (TFT) technologies could be used to create high-density, energy-efficient and low-cost integrated circuits. However, the development scalable processes for integrating TFT devices is challenging. Here, we report indium oxide (In 2 O 3 ) TFTs on a silicon/silicon dioxide (Si/SiO substrate at room temperature. We use an approach that compatible with complementary metal–oxide–semiconductor (CMOS) stack ten...
Abstract The traditional plasma etching process for defining micro-LED pixels could lead to significant sidewall damage. Defects near regions act as non-radiative recombination centers and paths current leakage, significantly deteriorating device performance. In this study, we demonstrated a novel selective thermal oxidation (STO) method that allowed pixel definition without undergoing damage subsequent dielectric passivation. Thermal annealing in ambient air oxidized reshaped the LED...
Recent advancements in power electronics have been driven by Ga2O3-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching. However, integrating Ga2O3 devices with essential silicon CMOS logic circuits for advanced control poses fabrication challenges. Researchers introduced NMOS and pseudo-CMOS integration, but these may either consume more or increase the design complexity. Hence, this article proposes realized using heterogeneous 3D-stacked bilayer...
Abstract Ultrawide‐bandgap gallium oxide (Ga 2 O 3 ) holds immense potential for crucial applications such as solar‐blind photonics and high‐power electronics. Although several Ga polymorphs, i.e., α, β, γ, δ, ε, κ phases, have been identified, the band alignments between these phases largely overlooked due to epitaxy challenges inadvertent neglect. Despite having similar stoichiometry, heterojunctions involving different may exhibit offsets. Here, β‐Ga /κ‐Ga ‐stacked “phase heterojunction”...
A novel micro heat pipe array was used in solar panel cooling. Both of air-cooling and water-cooling conditions under nature convection condition were investigated this paper. Compared with the ordinary panel, maximum difference photoelectric conversion efficiency is 2.6%, temperature reduces maximally by 4.7℃, output power increases 8.4% for using air-cooling, when daily radiation value 26.3 MJ. 3%, 8℃, 13.9% water-cooling, 21.9
The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been realized on flexible substrates due to the limitations high-temperature crystallization conditions and lattice-matching requirements. We demonstrate β-Ga2O3(-201) CeO2(001)-buffered Hastelloy tape. results indicate that CeO2(001) a small bi-axial lattice mismatch with β-Ga2O3(-201), inducing simultaneous double-domain growth. Flexible photodetectors are fabricated β-Ga2O3-coated Measurements reveal...
Flexible Ga2O3 photodetectors have attracted considerable interest owing to their potential use in the development of implantable, foldable, and wearable optoelectronics. In particular, β-phase has been most widely investigated due highest thermodynamic stability. However, high-quality relies on ultrahigh crystallization temperature (usually ≥750 °C), beyond thermal tolerance flexible substrates. this work, we epitaxially grow a metastable κ-phase (002) thin film mica (001) substrate under...
Abstract. The unprecedented lockdown of human activities during the COVID-19 pandemic has significantly influenced social life in China. However, understanding impact this unique event on emissions different species is still insufficient, prohibiting proper assessment environmental impacts restrictions. Here we developed a multi-air-pollutant inversion system to simultaneously estimate NOx, SO2, CO, PM2.5 and PM10 China restrictions with high temporal (daily) horizontal (15 km) resolutions....
This study investigated the growth of AlN epitaxial films on 2-in. Si(111) via metal-organic chemical vapor deposition. By introducing triethylboron (TEB) during trimethylaluminum pretreatment, a nearly crack free epilayer with thickness 500 nm was acquired. The x-ray diffraction rocking curves (002) and (102) exhibited full width at half maximum values 0.22° 0.36°, respectively. Atomic force microscopy image analysis showed that after introduction TEB, larger grains appeared surface...
Abstract. A new long-term emission inventory called the Inversed Emission Inventory for Chinese Air Quality (CAQIEI) was developed in this study by assimilating surface observations from China National Environmental Monitoring Centre (CNEMC) using an ensemble Kalman filter (EnKF) and Nested Prediction Modeling System. This contains constrained monthly emissions of NOx, SO2, CO, primary PM2.5, PM10, non-methane volatile organic compounds (NMVOCs) 2013 to 2020, with a horizontal resolution 15...
Schottky and Ohmic contacts are key matters affecting carrier transport in oxide semiconductor-based electrical optical devices. For Ga2O3, the comparison of optoelectrical behaviors fundamental physical mechanism between these two not well known yet. In this work, β-Ga2O3 thin films were grown via metal–organic chemical vapor deposition then deposited with symmetrical Ni/Au (Schottky) or Ti/Au (Ohmic) contacts. Optoelectrical measurements show that contacted device exhibits superior...
The commonly used electron transport material (6,6)-phenyl-C61 butyric acid methyl ester (PCBM) for perovskite solar cells (PSC) with inverted planar structures suffers from properties such as poor film-forming. In this manuscript, we demonstrate a simple method to improve the film-forming of PCBM by doping poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) layer (ETL), which effectively enhances performance CH₃NH₃PbI₃ based cells. With 5 wt % F8BT in PCBM, short circuit current (JSC) and...
Wide bandgap (WBG) and ultrawide (UWBG) semiconductors in n‐type metal–oxide–semiconductor (n‐MOS) integrated circuits (ICs) are increasingly being explored for their potential applications the rapidly developing field of electronics. This review comprehensively examines role n‐MOS inverters underpinned by WBG UWBG application possibilities. It delves into various inverter topologies, including resistive, enhancement or diode‐load, depletion‐load, pseudo‐complementary MOS topologies. Each...
Intensive investigations have been conducted to develop epitaxial oxide thin films with superior electromagnetic performance by low-cost chemical solution deposition routes. In this paper, a novel propionate-based precursor without involving any other additive was proposed and employed grow superconducting YBa2Cu3O7−δ (YBCO) on LaAlO3 (LAO) single crystals. The solutions are stable long shelf life of up several months. Since the primary compositions propionates after evaporating solvent,...
A stacked XGBoost/LightGBM model was developed to predict and systematically investigate various high-performance SL-EBLs suggest a simpler experimentally realizable low Al-content SL-EBL design.
Abstract Indium oxide (In 2 O 3 ) thin films sputtered at room temperature were annealed under different atmospheres and examined for thin-film transistor (TFT) active channel applications. The annealing process was performed in a rapid thermal system 350 °C , Ar, forming gas (FG, 96% N /4% H ), . It found that the In TFTs exhibited high field-effect mobility ( μ FE > 40 cm V −1 s on/off current ratio I ∼ 10 8 controlled threshold voltage TH enhancement- depletion-mode operations. Note...