A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W⁻¹) was fabricated by constructing p–n junction of GaN/Ga₂O₃ films.

Solar-blind photodetectors have captured intense attention due to their high significance in ultraviolet astronomy and biological detection. However, most of the solar-blind not shown extraordinary advantages weak light signal detection because forewarning low-dose deep-ultraviolet radiation is so important for human immune system. In this study, a high-performance photodetector constructed based on n-Ga2O3/p-CuSCN core-shell microwire heterojunction by simple immersion method. comparison...

Gallium oxide (Ga2O3), a typical ultra wide bandgap semiconductor, with of ∼ 4.9 eV, critical breakdown field 8 MV/cm, and Baliga's figure merit 3444, is promising to be used in high-power high-voltage devices. Recently, keen interest employing Ga2O3 power devices has been aroused. Many researches have verified that an ideal candidate for fabricating In this review, we summarized the recent progress field-effect transistors (FETs) Schottky barrier diodes (SBDs) based on Ga2O3, which may...

A heterojunction is an essential strategy for multispectral energy-conservation photodetection its ability to separate photogenerated electron–hole pairs and tune the absorption edge by selecting semiconductors with appropriate bandgaps. broadband ultraviolet (200–410 nm) self-powered photodetector constructed on exfoliated β-Ga2O3/CuI core–shell microwire heterostructure. Benefiting from photovoltaic photoconductive effects, our device performs excellent (UV) discriminability a UVC/visible...

A self-powered solar-blind photodetector with large<italic>V</italic>_ocenhancing performance is constructed on the PEDOT:PSS/Ga₂O₃hybrid heterojunction.

Amorphous gallium oxide thin film with heavy oxygen deficiency was deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition in order to explore the resistive switching behavior of Pt/Ga2O3-x/Pt sandwich structure. A well unipolar obtained this structure, which exhibits a high resistance ratio OFF/ON up 104, non-overlapping voltages, and excellent repeatability retention. Both I-V relation plots ON OFF states temperature dependent variation resistances indicate that observed can be...

A β-Ga₂O₃/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

Flexible photodetectors (PDs) have become the latest research interest owing to their potential applications in future implantable sensors and foldable/wearable optoelectronics. Ga2O3, an emerging ultrawide band gap semiconductor, is considered as native photosensitive material for solar-blind PDs. The reported fabrication temperature of Ga2O3 films usually above 600 °C, which hinders its practical application flexible devices. In this work, PDs based on graphene/amorphous van der Waals...

The pursuit of high-performance photodetectors functioning in the solar-blind spectrum is motivated by both scientific and practical applications ranging from secure communication, monitoring, sensing, etc. In particular, fabrication heterojunctions based on wide band gap semiconductors has emerged as an attractive strategy to promote high-efficient photogenerated electron/hole pair separation. However, precisely controlled growth remains a huge challenge. lattice mismatch leads formation...

A dual-mode, sensitive β-Ga₂O₃ MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% specific detectivity 10¹¹ Jones.

Wide bandgap oxide semiconductors have been a hot topic in electronic and optoelectronic technologies. The heterojunctions provide many significant favorable properties devices. energy-band alignments at the heterointerfaces between oxides play key role functional electronics. In this work, we studied band of ZnO/Ga2O3 Ta2O5/Ga2O3 heterojunctions. valence offsets were determined by X-ray photoelectron spectroscopy. heterojunction exhibits type II alignment with offset −0.24±0.02eV conduction...

Schottky and Ohmic contacts are key matters affecting carrier transport in oxide semiconductor-based electrical optical devices. For Ga2O3, the comparison of optoelectrical behaviors fundamental physical mechanism between these two not well known yet. In this work, β-Ga2O3 thin films were grown via metal–organic chemical vapor deposition then deposited with symmetrical Ni/Au (Schottky) or Ti/Au (Ohmic) contacts. Optoelectrical measurements show that contacted device exhibits superior...

Surface plasmon polariton (SPP) is electro-magnetic wave coupled to free electron oscillations near the surface of metal, and has been used improve photoelectric properties in many optoelectronic devices. In present study, Au nanoparticles (NPs)/β-Ga2O3 composite thin film was fabricated through depositing ultra-thin on β-Ga2O3 followed by post-thermal treatment. Compared bare film, a significant absorption around 510 nm, which attributed SPP NPs, observed UV–vis spectrum NPs/β-Ga2O3 film....

In this paper, asymmetric interdigital Ti and Au electrodes have been successfully patterned on the β-Ga2O3 films which are prepared by metal-organic chemical vapor deposition. Both photoconductive photovoltaic modes observed under ultraviolet illumination, respectively. The device exhibits a low current density of 0.32 nA cm−2 at 20 V in dark condition. As 254 nm illumination intensity increases above 400 μW cm−2, obvious self-powered characteristics with responsivity 0.4 mA W−1, providing...

In this article, a 16×4 linear array of β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -based metal-semiconductor-metal structured photodetector is described for solar-blind sensing operation at wavelength 254 nm. The film grown by using metal-organic chemical vapor deposition (MOCVD) equipment, and the photodetectors are finished in constructing with standard photolithography...

Highly oriented () Ga2−x Zn x O3 thin films with different doping concentrations were grown on (0 0 1) sapphire substrates by laser molecular beam epitaxy technology. The expansion of lattice and the shrinkage band gap increasing level confirms chemical substitution Zn2+ ions into Ga2O3 crystal lattice. emission intensity blue-violet bands enhanced increase (ZnGa)' under 254 nm ultraviolet excitation, maximum was obtained at = 0.8. A metal–semiconductor–metal structured solar-blind...

Negative differential resistance (NDR) and bipolar resistive switching (RS) phenomena were observed in Au/Ga2O3−x/Nb:SrTiO3/Au heterostructures fabricated by growing amorphous gallium oxide thin films on 0.7%Nb-doped SrTiO3 substrates using pulsed laser deposition technique. The RS behavior is reproducible stable without the forming process. NDR phenomenon happened during course of from low state to high was dependent much applied forward bias. bias charge releasing oxygen vacancies...

Both unipolar resistive switching (URS) and bipolar (BRS) behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS URS is controllable reversible. operations mode requires smaller voltage than that the mode. oxygen vacancies closed to interface contributes BRS, bias-controlling filament formation/rupture depletion layer considered contribute URS. happens only negative part due nature of directionality p-n junction. process reported here can be developed design memory device.

A 4×4 beta-phase gallium oxide ( β -Ga 2 O 3 ) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga thin film prepared through the metalorganic chemical vapor deposition technique, then used to construct via photolithography, lift-off, and ion beam sputtering methods. one cell shows dark current 1.94 pA, photo-to-dark ratio 6×10 7 , 634.15 A⋅W −1 specific detectivity 5.93×10 11 cm⋅Hz...

Abstract With the continuous development of digital information and big data technologies, ambient temperature heat generation during operation magnetic storage devices play an increasingly crucial role in ensuring security device stability. In this study, we examined lattice thermal conductivity van der Waals semiconductor CrSBr from bulk to monolayer structures using first-principles calculations phonon Boltzmann transport equation. Our results indicated that show anisotropy bilayer...