The workfunction change in doped Si was examined using Kelvin force microscopy a wide range of doping concentrations from p-type ∼1019 to n-type ∼1020 cm−3 corresponding the bulk Fermi-level positions near valence-band top conduction-band minimum. Experimental data can be reproduced by model calculations an appropriate surface-state density composed donor- and acceptor-like gap states. These results indicate that no appreciable surface-band bending occurs for less than ∼1014 while becomes...

Recent studies including our own report (I) have revealed that heavily phosphorus (P) doped Czochralski-silicon (HP-Cz-Si) exhibits peculiar defect behaviors during crystal growth. HP-Cz-Si crystals with a low resistivity of around 0.6 mΩ cm (P concentration 1.3 × 1020 P cm−3) interstitial-type stacking faults (SFs) and dislocations, which degrade device characteristics. The purpose this paper is to clarify what causes the behavior in through theoretical calculations. thermal equilibrium...

We analyzed the sensitivity of scanning microwave microscopy (SMM) for doping concentration measurements in n-type Si based on conventional equivalent-circuit model combined with numerical simulations carrier distributions metal-oxide-semiconductor capacitors. The minimum detectable change capacitance was estimated to be 0.26 aF amplitude applied 17 GHz voltage 0.3 V. Possible measurable range electron concentrations found 1015–1020 cm−3 ∼10%–1% accuracy by using nano-scale flat-shaped tips...

This report (I) aims to investigate defect behavior during the growth of heavily phosphorus (P)-doped Czochralski silicon (HP-Cz-Si) crystals. The defects and P chemical states in as-grown crystals with a resistivity 0.6 mΩ cm wafers annealed at around 600 °C were evaluated by transmission electron microscopy hard x-ray spectroscopy (HAXPES). Micro-dislocation loops (MDLs) observed bottom portion crystal, larger stacking faults (SFs), including complex dislocation clusters, middle portion....

Oxygen precipitation properties in the as‐grown defect‐free region of nitrogen‐doped Czochralski silicon (Cz‐Si) single crystals with very low oxygen concentrations ([Oi]) are investigated. At [Oi] values 4.6–5.9 × 10 17 atoms cm −3 , oxide precipitates a high density 9 generated owing to enhancement by nitrogen‐doping. In contrast, at 1.3–2.6 no observed even though nitrogen‐doped. is analyzed based on thermodynamic model, which some embryos assumed exist Cz‐Si temperatures crystal growth,...

The formation of thermal donors in silicon is investigated using Czochralski crystals grown with different grown-in defect regions, such as voids and nuclei oxidation-induced stacking faults. It was found that the rate during annealing at 450 °C increases an increase density oxide precipitates regions containing defects. thermodynamic model for shows electrically inactive oxygen trimers as-grown crystal precipitates, suggesting enhanced due to self-interstitials emitted by precipitations growth.

Abstract This study investigated the change in carrier concentration near surface of a silicon substrate during gallium nitride (GaN) growth with an aluminum (AlN) buffer layer. It was observed that aluminum, gallium, and carbon diffused into process increased increasing impurities. The identified as having originated from decomposed on reactor wall introduced onto GaN growth. In contrast, amount influenced by duration trimethylaluminum (TMAl) flow: long TMAl flow step before AlN led to high surface.

The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing out-diffusion profile changes found at the interface between a lightly boron-doped epitaxial layer and substrate secondary ion mass spectrometry. It that is proportional to square root concentration range 1018 cm−3–1019 cm−3 temperatures from 750 °C 950 °C. model based on diffusion dimers double positive charge state could explain diffusion. We have concluded attributed ionized depending Fermi level position.

The enhanced diffusion of boron has been investigated by analyzing out-diffusion profiles in the vicinity interface between a lightly boron-doped silicon epitaxial layer and heavily substrate with resistivity 8.2 mΩ cm an oxide precipitate (O.P.) density 108–1010 cm−3. It is found that during annealing at 850–1000 °C increase density. On basis model for mediated self-interstitials, we reveal attributed to self-interstitials supersaturated as result emission from precipitates absorption...

The segregation gettering mechanism for nickel in p/p+ silicon epitaxial wafers is investigated using heavily boron-doped substrates with different resistivities the range of 7 to 10 mΩcm. It found that becomes active when contamination level lower than 1 × 1013 cm−2, resulting decrease precipitation at surface layers resistivity p+ decreases. model based on enhanced solubility could explain competitive interaction between effect and below 500°C during cooling process after heat treatments....

Abstract Thermally activated defect behaviors in nitrogen (N)-doped Czochralski silicon (Cz-Si) single crystals were investigated using deep level transient spectroscopy and quasi-steady-state photoconductance to confirm the crystals’ applicability insulated gate bipolar transistors (IGBTs). The thermally defects, which probably N-vacancy complexes degraded minority carrier lifetime, detected with extremely low densities N-doped Cz-Si compared N-rich floating zone Si after heat treatments at...

The relationship between mobile dislocation density and oxygen precipitation characteristics in Czochralski-grown silicon wafers has been investigated using the crystal plasticity model based on an extended Haasen–Alexander–Sumino combination with experimental method. A formula of initial for oxygen-precipitated deduced from obtained through correlation three-point bending test results simulation a finite element model. this work indicates that size oxide precipitates dominant effect...

The dependence of the gettering efficiency for copper impurity in n‐type silicon wafers on concentration a dopant such as phosphorus, arsenic, or antimony is investigated by chemical analysis and observation precipitates. It found that decreases gradually with increasing range 10 14 –10 19 cm −3 increases rapidly at concentrations higher than . Copper precipitates are observed bulk doped phosphorus , suggesting relaxation occurs. In contrast, no above suggested segregation occurs result...

Nitrogen-doped silicon wafers manufactured using the Czochralski technique (Cz-Si) with an oxygen concentration ([ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{O}_{I}$ </tex-math></inline-formula> ]) of 2.5– notation="LaTeX">$5.6\,\,\mathbf {\times }\,\,10^{17}$ atoms cm notation="LaTeX">$^{-3}$ are heat treated to simulate conventional and scaled manufacturing processes insulated gate bipolar...

The segregation gettering of nickel in p / + silicon epitaxial wafers is analyzed based on the model considering competitive interaction between effect and precipitations at surface during cooling process after heat treatments. It found that effective higher temperatures than Ni-silicide formation even if donor level lies close to valence band edge, resulting suppression lower temperatures. suggested be useful for low temperature a future device fabrication.