Rongkun Han

ORCID: 0000-0003-0497-6556
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About
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Research Areas
  • Magnetic properties of thin films
  • Magnetic and transport properties of perovskites and related materials
  • Multiferroics and related materials
  • Heusler alloys: electronic and magnetic properties
  • ZnO doping and properties
  • Magnetic Properties and Applications
  • Characterization and Applications of Magnetic Nanoparticles
  • Magnetic Field Sensors Techniques
  • Physics of Superconductivity and Magnetism
  • 2D Materials and Applications
  • Semiconductor materials and interfaces
  • Non-Destructive Testing Techniques
  • Chalcogenide Semiconductor Thin Films
  • Magnetic Properties of Alloys

Institute of Semiconductors
2023-2025

University of Chinese Academy of Sciences
2023-2025

Chinese Academy of Sciences
2023-2024

The magnetic spin Hall effect (MSHE) may produce the out-of-plane current with $z$-direction polarization $({\mathbit{\ensuremath{\sigma}}}_{\mathbf{z}})$, thus allowing field-free switching of perpendicular magnetization in ferromagnetic films. Here, we fabricate epitaxial $L{1}_{1}\text{\ensuremath{-}}\mathrm{CoPt}/D{0}_{19}\text{\ensuremath{-}}\mathrm{M}{\mathrm{n}}_{3}\mathrm{Ga}$ bilayers on MgO(111) substrates and characterize their electrical transport properties. In bilayers, observe...

10.1103/physrevb.107.134422 article EN Physical review. B./Physical review. B 2023-04-18

Abstract Transition metal dichalcogenide (TMDC) monolayers provide an ideal platform for exciton and valley-spintronics exploration due to their unique properties. Integrating TMDC with conventional semiconductors allows harnessing the properties of both materials. This strategy holds great promise development advanced optoelectronics spintronic devices. In this work, we investigated valley dynamics in WSe 2 /GaAs heterostructure by employing femtosecond pump-probe ultrafast spectroscopy....

10.1088/1674-1056/add504 article EN Chinese Physics B 2025-05-07

Rare-earth-free perpendicularly magnetized L10-MnxAl alloy holds promise for low-cost permanent magnets and high-performance spintronic devices. In this Letter, we report a large-scale modulation of perpendicular magnetic anisotropy (PMA) in MnxAl films by changing the composition x. Through utilizing lattice-matching B2-CoGa underlayer optimizing growth conditions, 30-nm-thick can maintain excellent PMA wide range (0.7 ≤ x 3). Meanwhile, crystalline structure properties exhibit strong...

10.1063/5.0183072 article EN Applied Physics Letters 2024-03-04

Perpendicularly magnetized ferrimagnets have shown potential application in nonvolatile, high-density, and ultrafast spintronic devices. Achieving this requires tuning the material performance of ultrathin ferrimagnetic films. Here, we present an experimental demonstration tunable perpendicular magnetic anisotropy (PMA) spin–orbit torque (SOT) switching behavior a Heusler alloy D022-Mn3Ga based multilayers by introducing lattice-matching underlayers. It is found that highly (001) orientated...

10.1063/5.0155559 article EN Applied Physics Letters 2023-07-24

The indirect interlayer exchange coupling (IEC) between two magnetic layers holds significant importance in the field of spintronics and has been widely used construction synthetic antiferromagnets. Recently, Dzyaloshinskii–Moriya interaction (DMI), antisymmetric counterpart IEC, discovered trilayers with a heavy-metal spacer. In this study, we present an investigation on symmetric counterparts IEC D022-Mn3Ga/Pt/Co orthogonal magnetization. Due to strong DMI across entire multilayer,...

10.1063/5.0189347 article EN cc-by APL Materials 2024-04-01

Rare-earth-free Mn-based binary alloy L1 0 -MnAl with bulk perpendicular magnetic anisotropy (PMA) holds promise for high-performance random access memory (MRAM) devices driven by spin-orbit torque (SOT). However, the lattice-mismatch issue makes it challenging to place conventional spin current sources, such as heavy metals, between layers and substrates. In this work, we propose a solution using B2-CoGa source. The lattice-matching enables high-quality epitaxial growth of 2-nm-thick on...

10.1088/0256-307x/41/5/057503 article EN Chinese Physics Letters 2024-04-30

Artificial ferrimagnetic [D022-Mn3Ga/Co2MnSi]N superlattices ([Mn3Ga/CMS]N SLs) combining perpendicular magnetic anisotropy as well exceptional thermal and stability hold promises in functional spintronic devices. However, the relevant precession dynamics are still lacking. Here, we report on dynamic properties [Mn3Ga/CMS]5 SLs investigated by time-resolved magneto-optical Kerr effect (TRMOKE) measurements. The magnetization process damping constant (α0) of rely heavily thickness Mn3Ga layer...

10.1063/5.0173735 article EN Applied Physics Letters 2023-10-02

Perpendicularly magnetized Co-based Heusler alloys are promising candidates in high-performance spintronic devices. However, there is a contradiction between thermal stability and damping-like spin–orbit torque (SOT) efficiency with interface-induced perpendicular magnetic anisotropy (PMA). Here, we present epitaxially grown perpendicularly Mn1+xCo2−xAl (MCA) through tetragonal distortion. Ferrimagnetism distortion-induced PMA obtained MCA alloys. A large effective spin Hall angle (θeff) up...

10.1063/5.0200132 article EN mit Applied Physics Letters 2024-05-13

The temperature dependence of resistivity and the negative magneto-resistance (MR) as well spin-orbit torque (SOT)-induced magnetization switching behaviors have been investigated in perpendicularly magnetized Mn-rich Heusler alloy Mn2.5CoAl (MCA) films with different thicknesses (tMCA). MCA excessive Mn partial substitution for Co are subject to compressive strain, resulting a tunable perpendicular magnetic anisotropy (PMA) behavior. Moreover, film increases decreasing temperature, showing...

10.1109/intermagshortpapers58606.2023.10228665 article EN 2023-05-01
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