A5082070193- 2D Materials and Applications
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Chalcogenide Semiconductor Thin Films
- Advancements in Semiconductor Devices and Circuit Design
- Molecular Junctions and Nanostructures
- Quantum and electron transport phenomena
- Perovskite Materials and Applications
Chinese Academy of Sciences
2022-2024
University of Chinese Academy of Sciences
2022-2024
Institute of Semiconductors
2022-2024
Abstract 2D van der Waals antiferromagnets have emerged as excellent candidates for studying novel low‐dimensional magnetism. The recently discovered spin–orbit‐entangled excitonic bound state appearing below the Néel temperature of 150 K in antiferromagnetic NiPS 3 (the so‐called Zhang–Rice (ZR) exciton) has drawn considerable attention terms exploring strong correlation spins, orbitals, and charges a localized many‐body state. However, formation mechanism ZR excitons remains unclear, its...
Abstract Transition metal dichalcogenide (TMDC) monolayers provide an ideal platform for exciton and valley-spintronics exploration due to their unique properties. Integrating TMDC with conventional semiconductors allows harnessing the properties of both materials. This strategy holds great promise development advanced optoelectronics spintronic devices. In this work, we investigated valley dynamics in WSe 2 /GaAs heterostructure by employing femtosecond pump-probe ultrafast spectroscopy....
We use AlAs sacrificial layer etching technology to peel a film of In0.15Ga0.85As/GaAs single quantum wells (QWs) from GaAs substrate and transfer the Si wafer covered with randomly distributed Au nanoparticles. In this way, local strains are introduced into QW film, which leads formation exciton confinement potential. From them, we have observed very sharp emission lines in photoluminescence (PL) spectra PL bright spots space. The is proved be localized potential energy funnel. can also...
We have obtained long lifetime exciton emission in an InGaAs/GaAs quantum well (QW) when the QW film is transferred onto a silicon substrate covered by Au nanoparticles. It found that increases from 0.301 ± 0.003 ns for as-grown sample to 88 6 with nanoparticles, i.e., spontaneous decay rate inhibited factor of 1/300. The experimental condition observing excitons very sensitive separation distance z between and nanoparticles because phase-related scattering field mainly occurs at kz ∼1,...