A5100718932- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Engineering Applied Research
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Silicon and Solar Cell Technologies
- Optical Network Technologies
- Catalytic Processes in Materials Science
- Organic Electronics and Photovoltaics
- Organic Light-Emitting Diodes Research
- Advanced Fiber Optic Sensors
- Advanced Photonic Communication Systems
- Advanced Battery Materials and Technologies
- Conducting polymers and applications
- Advanced Fiber Laser Technologies
- Advancements in Battery Materials
- Advanced Surface Polishing Techniques
- Fire Detection and Safety Systems
- Advancements in Semiconductor Devices and Circuit Design
- Electrocatalysts for Energy Conversion
- CCD and CMOS Imaging Sensors
- Chalcogenide Semiconductor Thin Films
- Fuel Cells and Related Materials
- Silicon Nanostructures and Photoluminescence
- Combustion and flame dynamics
Korea Institute of Science and Technology
2001-2025
Seoul National University of Science and Technology
2025
Korea University
2015-2025
Adobe Systems (United States)
2022-2025
Myongji University
2008-2024
Samsung (South Korea)
2005-2024
Yonsei University
2007-2023
Yeungnam University
2021-2023
Universitat Politècnica de Catalunya
2022
International Center for Numerical Methods in Engineering
2022
A low-power flexible organic light-emitting diode (OLED) display device based on low temperature color filters with a thin film encapsulated RGB OLED microcavity is achieved high contrast ratios (up to 150 000:1 in dark ambient) and power consumption (34% saving compared polarization film). Furthermore, mechanical 10 000 times folding experiment radius of 1 mm demonstrates the reliability device.
An extraction technique for subgap density of states (DOS) in an n-channel amorphous InGaZnO thin-film transistor (TFT) by using multifrequency capacitance-voltage ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> - xmlns:xlink="http://www.w3.org/1999/xlink">V</i> ) characteristics is proposed and verified comparing the measured xmlns:xlink="http://www.w3.org/1999/xlink">I</i> with technology computer-aided design simulation results...
SrTiO 3 (STO), which has an exceptionally high dielectric constant, is a promising candidate for capacitor dielectrics dynamic random-access memory (DRAM) applications. However, during atomic layer deposition (ALD), unwanted interfacial...
This paper presents ultrathin and highly sensitive input/output devices consisting of a capacitive touch sensor (Cap-TSP) integrated on thin-film-encapsulated active-matrix organic light-emitting diodes (OLEDs). The optimal structure the electrically noise-free sensor, which is assembled OLED (AMOLED) display, obtained by investigating internal electrical field distribution capacitance change based Q3D Extractor model. Electrostatic simulations have verified malfunction-free signals for 4-in...
Eu2+-activated M5(PO4)3X (M = Ca, Sr, Ba; X F, Cl, Br) compounds providing different alkaline-earth metal and halide ions were successfully synthesized characterized. The emission peak maxima of the M5(PO4)3Cl:Eu2+ Ba) blue-shifted from Ca to Ba (454 nm for 444 434 Ba), those Sr5(PO4)3X:Eu2+ (X red-shifted along series halides, F → Cl Br (437 448 Br). site selectivity occupancy activator (Eu2+) in M5(PO4)3X:Eu2+ crystal lattices estimated based on theoretical calculation 5d 4f transition...
In this work, we report a freeform shaped active-matrix organic light-emitting diode (AMOLED) display based on low-temperature polycrystalline silicon technology. It was found that our AMOLED, developed with unique pixel structure, can withstand in various desired shapes featuring its stretchable property no degradation of image quality and device characteristics. We demonstrated unprecedented convex/concave shape the 9.1-inch AMOLED by thermoforming process. The design is promising for...
The amorphous oxide thin-film transistor (TFT)-oriented simulator [subgap Density of states (DOS)-based Amorphous Oxide TFT Simulator (DeAOTS)] is proposed, implemented, and demonstrated for indium-gallium-zinc-oxide (a-IGZO) TFTs. It only consists parameters having their physical meanings supplied with concrete techniques parameter extraction. Among the parameters, acceptor-like DOS <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gA</i> (...
The effect of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{O}_{2}$</tex></formula> flow rate (OFR) during channel deposition is investigated on the electrical instability amorphous indium–gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under positive gate bias stresses. From transfer curves measured before and after stresses, we can observe that high OFR degrades stability causes...
Abstract To accelerate the discovery of materials through computations and experiments, a well-established protocol closely bridging these methods is required. We introduce high-throughput screening for bimetallic catalysts that replace palladium (Pd), where similarities in electronic density states patterns were employed as descriptor. Using first-principles calculations, we screened 4350 alloy structures proposed eight candidates expected to have catalytic performance comparable Pd. Our...
Porous thermoelectric materials offer exciting prospects for improving the performance by significantly reducing thermal conductivity. Nevertheless, porous structures are affected issues, including restricted enhancements in attributed to decreased electronic conductivity and degraded mechanical strength. This study introduces an innovative strategy overcoming these challenges using Bi0.4Sb1.6Te3 (BST) combining structuring interface engineering via atomic layer deposition (ALD). BST powder...
Capacitor structures utilized in modern dynamic random access memory (DRAM) cells require the conformal growth of high-k films on electrode materials. In this context, atomic layer deposition (ALD) rutile-phase TiO2 nearly lattice-matched substrates such as RuO2 has been extensively explored. It is typically desired to grow insulating at high temperatures ensure low defect concentrations and crystallinity. However, with increasing temperature, it also crucial consider aggravated effect...
Based on the physical model of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) and extracted density states described in Part I, a quantitative investigation mechanisms negative bias illumination stress (NBIS)-induced threshold voltage <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VT</i> instability a-IGZO TFTs is presented. It found that shallow donor state-creation explains NBIS time evolution electrical characteristics very well....
Rational design of a one-pot solvent-assisted method enables the production Sn-substituted Li argyrodite with superionic conductivity, air stability, and compatibility, leading to good electrochemical performance all-solid-state batteries.
Building cooling and heating, solar-powered energy production, recovery, other energy-consuming industries have all seen an increase in the use of cold/hot latent thermal storage (LH-TES). Through LH-TES that uses phase-change materials (PCMs) as a medium helps to close supply demand gap raises possibility savings. However, stability, thermal, physical, chemical properties PCM play major role how effectively it can be used. In recent years, adding gelling thickening agents (GTAs) has gained...
With the increasing demand for ammonia applications, there is a significant focus on improving NH
Due to the inherent property of large contact and parasitic resistances in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs), a metal-semiconductor-metal (MSM) structure is key element a-IGZO TFTs. Therefore, voltage drops across MSM should be fully considered modeling characterization A physics-based semiempirical model for current-voltage characteristics source-channel-drain TFTs proposed verified with experimental results. The current structures includes thermionic field emission...
The emergence of the coronavirus disease 2019 (COVID-19) pandemic has led to a cost and time crisis for most construction projects around world. Adherence COVID-19 response guidelines sites may prevent occurrence cases, which eliminates risk site closure. However, adding disinfection process process, as mandated in guidelines, increases overall time. Conversely, however, not result cases among workers, would delay perhaps even cause closure site. Therefore, this study analyzed feasibility...