A5037744989- Advancements in Battery Materials
- Advanced battery technologies research
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Superconducting and THz Device Technology
- Advanced Battery Materials and Technologies
- Supercapacitor Materials and Fabrication
- Extraction and Separation Processes
- Metal Extraction and Bioleaching
- Quantum and electron transport phenomena
Xidian University
2021-2024
Southwest University
2019-2022
Chongqing University
2020
Abstract Smart combination of manifold carbonaceous materials with admirable functionalities ( like full pores/functional groups, high specific surface area) is still a mainstream/preferential way to address knotty issues polysulfides dissolution/shuttling and poor electrical conductivity for S-based cathodes. However, extensive use conductive carbon fillers in cell designs/technology would induce electrolytic overconsumption thereby shelve high-energy-density promise Li–S cells. To cut down...
This work demonstrates high-performance AlN/GaN double-barrier resonant tunneling diodes (RTDs) with high peak current density grown by plasma-assisted molecular beam epitaxy on c-plane free-standing GaN substrates, featuring stable and repeatable negative differential resistance (NDR) characteristics at room temperature. By scaling down the barrier thickness of AlN lateral mesa size collector, record 1551 kA/cm2 is achieved along a peak-to-valley ratio (PVCR) 1.24, which attributed to...
The massive and sustained realization of highly reactive nanometals@carbon scaffold matrix may push forward the further development next-generation alkaline battery systems. Herein, we put a scalable applicable strategy to convert wasted bamboo products into porous carbon microfibers (CMFs), with Fe or Ni nanoparticles evenly inlaid, using special effective "colloid-assisted" approach. Such smart/economical nanoengineering technique would enable vast production uniform "mosaic" hybrid...
Pyrite FeS2 has long been a research focus as the alternative anode of rechargeable Ni–Fe cells owing to its eye-catching merits great earth-abundance, attractive electrical conductivity, and output capacity. However, further progress is impeded by unsatisfactory cyclic behaviors due still "ill-defined" phase changes. To gain insights into pyrite working principles/failure factors, we herein design core–shell hybrid FeS2@carbon nanoreactor, an optimal configuration approaching practical...
Fast-response/stable Ni–Bi cells achieved by hollowing-out Bi@carbon nanospheres are an improved electricity storage choice to couple with green energy harvesting.
In this Letter, we present the excellent negative differential resistance (NDR) characteristics of AlN/GaN double-barrier resonant tunneling diodes (RTDs) in which active layers are grown by molecular beam epitaxy on thick GaN-on-sapphire templates manufactured metal-organic chemical vapor deposition. Here, indium flux is introduced as surfactant to reduce interface roughness and improve sharpness heterointerface during epitaxial growth AlN/GaN/AlN quantum well. The processed device with a...
Here, we present a systematical investigation of AlN/GaN double-barrier resonant tunneling diodes (RTDs) grown by plasma-assisted molecular beam epitaxy on metal-organic chemical vapor deposition GaN-on-sapphire templates. The processed devices featured an active region composed 2.5 nm GaN quantum well sandwiched two 1.5 AlN barriers and RTD mesa diameter ranging from 1 to 20 μm. Room temperature current–voltage characteristics exhibited repeatable negative differential resistance (NDR) free...
The advancement of Ni–Bi batteries has turned sluggish because impenetrable barriers related to physicochemical instability bismuthic species under thermal conditions. This directly makes Bi-based anodes impossible hybridize with graphitic carbons for a longer-term cyclic lifespan. To break this constraint, we herein propose an effective strategy by incorporating Fe into systems form multielement anodes. smart Bi/Fe merits combination/complementation can drastically promote the tolerable...
Abstract In this work, high-performance negative differential resistance (NDR) characteristics are demonstrated in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes (RTDs). The devices grown by plasma-assisted MBE on bulk GaN substrates and exhibit robust repeatable NDR at RT. A high peak current density of 183 kA cm −2 is simultaneously with a large peak-to-valley ratio 2.07, mainly benefiting from the significantly reduced dislocation improved hyper-abrupt heterointerfaces...