A5013146848- Graphene research and applications
- Magnetic properties of thin films
- 2D Materials and Applications
- Catalytic Processes in Materials Science
- Electron and X-Ray Spectroscopy Techniques
- Physics of Superconductivity and Magnetism
- Surface and Thin Film Phenomena
- Advanced Chemical Physics Studies
- Topological Materials and Phenomena
- Perovskite Materials and Applications
- Theoretical and Computational Physics
- Iron oxide chemistry and applications
- Quantum and electron transport phenomena
- Chalcogenide Semiconductor Thin Films
- nanoparticles nucleation surface interactions
- Advancements in Battery Materials
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Magnetic Properties and Synthesis of Ferrites
- Advanced Electron Microscopy Techniques and Applications
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Advanced Materials Characterization Techniques
Elettra-Sincrotrone Trieste S.C.p.A.
2017-2025
AREA Science Park
2020-2021
Fritz Haber Institute of the Max Planck Society
2014-2017
The lack of large-area synthesis processes on substrates compatible with industry requirements has been one the major hurdles facing integration 2D materials in mainstream technologies. This is particularly case for recently discovered monoelemental group V which can only be produced by exfoliation or growth exotic substrates. Herein, to overcome this limitation, we demonstrate a scalable method synthesize antimonene germanium using solid-source molecular beam epitaxy. emerging material...
The current-driven motion of magnetic skyrmions is an essential functionality for next-generation memory and logic devices. This paper provides a complete, detailed experimental study model system composed ultrathin Pt/Co/MgO film, in which 100-nm move at high speeds 100 m/s exhibit velocity-dependent skyrmion Hall effect. Detailed characterization the film properties using experiment, analytical modeling, micromagnetic simulation reveals that this behavior can be fully accounted by pinning...
The recent discovery of magnetic van der Waals (vdW) materials triggered a wealth investigations in science and now offers genuinely new prospects for both fundamental applied research. Although the catalog vdW ferromagnets is rapidly expanding, most them have Curie temperature below 300 K, notable disadvantage potential applications. Combining element-selective X-ray imaging force microscopy, we resolve at room domains domain walls micron-sized flakes CrTe2 ferromagnet. Flux-closure...
The reversible transformations of thin magnetite (Fe3O4) and hematite (α-Fe2O3) films grown on Pt(111) Ag(111) single crystals as support have been investigated by a combined low energy electron microscopy (LEEM) low-energy diffraction (LEED) study. conversions were driven oxidation, annealing in ultrahigh vacuum (UHV), or Fe deposition with subsequent annealing. As expected, the oxidation Fe3O4 film yielded an α-Fe2O3 structure. Unexpectedly, UHV also led to transformation from into...
Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and non-trivial Berry phase play pivotal role in remarkable electronic, optical, mechanical chemical properties 2D Dirac materials. known materials are gapless only within certain approximations, for example, absence SOC. Here we report a route to establishing robust cones with nonsymmorphic crystal lattice. symmetry...
While the usual approach to tailor behavior of condensed matter and nanosized systems is choice material or finite-size interfacial effects, topology alone may be key. In context motion magnetic domain walls (DWs), known suffer from dynamic instabilities with low mobilities, we report unprecedented velocities $>600\text{ }\text{ }\mathrm{m}/\mathrm{s}$ for DWs driven by spin-transfer torques in cylindrical nanowires made a standard ferromagnetic material. The reason robust stabilization...
Abstract Gallium selenide (GaSe) is a van der Waals semiconductor widely used for optoelectronic devices, whose performances are dictated by bulk properties, including band‐gap energy. However, recent experimental observations that the exfoliation of GaSe into atomically thin layers enhances in electrochemistry and photocatalysis have opened new avenues its applications fields energy catalysis. Here, it demonstrated surface‐science experiments density functional theory (DFT) oxidation Ga 2 O...
Abstract Resistive switching in metal oxides is believed to be caused by a temperature and electric field driven redistribution of oxygen vacancies within nanometer sized conductive filament. Accordingly, gaining detailed information about the chemical composition filaments key importance for comprehensive understanding process. In this work, spectromicroscopy used probe electronic structure Ta 2 O 5 ‐based memristive devices. It found that resistive leads formation filament with an vacancy...
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The novel organic semiconductor dinaphthothienothiophene (DNTT) has gained considerable interest because its large charge carrier mobility and distinct chemical robustness enable the fabrication of field effect transistors with remarkable long-term stability under ambient conditions. Structural aspects DNTT films their control, however, remain so far largely unexplored. Interestingly, crystalline structure is rather similar to that prototypical pentacene, for which molecular orientation in...
Tin diselenide (SnSe2) is a van der Waals semiconductor, which spontaneously forms subnanometric SnO2 skin once exposed to air. Here, by means of surface-science spectroscopies and density functional theory, we have investigated the charge redistribution at SnO2–SnSe2 heterojunction in both oxidative humid environments. Explicitly, find that work function pristine SnSe2 surface increases 0.23 0.40 eV upon exposure O2 air, respectively, with transfer reaching 0.56 e–/SnO2 between underlying...
Abstract Resistive switching in transition metal oxide‐based metal‐insulator‐metal structures relies on the reversible drift of ions under an applied electric field nanoscale. In such structures, formation conductive filaments is believed to be induced by electric‐field driven migration oxygen anions, while cation sublattice often considered inactive. This simple mechanistic picture process incomplete as both anions and cations have been previously identified mobile species device operation....
In stacks of two-dimensional crystals, mismatch their lattice constants and misalignment crystallographic axes lead to formation moiré patterns. We show that superlattice effects persist in twisted bilayer graphene (tBLG) with large twists short periods. Using angle-resolved photoemission, we observe dramatic changes valence band topology across regions the Brillouin zone, including vicinity saddle point at M 3 eV from Dirac points. this energy range, resolve several minibands detect...
Abstract The ability to manipulate magnetic anisotropy is essential for sensing and storage tools. Surface carbon species offer cost‐effective alternatives metal‐oxide noble metal capping layers, inducing perpendicular in ultrathin ferromagnetic films. Here, the different mechanisms by which magnetism a few‐layer‐thick Co thin film modified upon adsorption of monoxide (CO), dispersed carbon, graphene are elucidated. Using X‐ray microscopy with chemical sensitivity, in‐plane out‐of‐plane spin...
Point defects such as oxygen vacancies cause emergent phenomena resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of electronic structure a memristive device by spectromicroscopy. We find that result in-gap states use input for single-band transport simulations. Because are situated below Fermi level, they do not contribute to current directly impact shape conduction band....
Abstract Recently, germanium selenide (GeSe) has emerged as a promising van der Waals semiconductor for photovoltaics, solar light harvesting, and water photoelectrolysis cells. Contrary to previous reports claiming perfect ambient stability based on experiments with techniques without surface sensitivity, here, by means of surface‐science investigations density functional theory, it is demonstrated that actually both: i) the bulk crystals; ii) atomically thin flakes GeSe are prone...
Abstract We studied the symmetry of magnetic properties and resulting textures in ultra-thin epitaxial Au 0.67 Pt 0.33 /Co/W(110), a model system exhibiting perpendicular anisotropy interface Dzyaloshinskii–Moriya interaction (DMI). As peculiar feature, C 2v crystal induced by Co/W results an additional uniaxial in-plane cobalt layer. Photo-emission electron microscopy with sensitivity reveals formation self-organised stripe domains oriented parallel to hard magnetisation axis. attribute...
Abstract Ostwald ripening is a well‐known physicochemical phenomenon in which smaller particles, characterized by high surface energy, dissolve and feed the bigger ones that are thermodynamically more stable. The effect commonly observed solid liquid solutions, as well systems consisting of supported metal clusters or droplets. Here, evidence provided for occurrence an oxide‐on‐metal system which, this case, consists ultrathin iron monoxide (FeO) islands grown on Ru(0001) single‐crystal...
We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring Hall magnetoresistance (SMR) in epitaxial thin films insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that AFM spins SmFeO$_3$(110) align plane film. Angularly dependent show SmFeO$_3$/Ta bilayers exhibit positive SMR, contrast to negative SMR expected previously studied collinear AFMs. The amplitude increases...
We show that in a uniform thickness NiO(111)/Fe(110) epitaxial bilayer system, at given temperature near 300 K, two magnetic states with orthogonal spin orientations can be stabilized antiferromagnetic NiO. Field-free, reversible switching between these is demonstrated. The observed phenomena arise from the unique combination of precisely tuned interface anisotropy, thermal hysteresis reorientation transition and interfacial ferromagnet/antiferromagnet exchange coupling. possibility...