A5054372153- 2D Materials and Applications
- Graphene research and applications
- Topological Materials and Phenomena
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Magnetic properties of thin films
- Quantum and electron transport phenomena
- Perovskite Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Physics of Superconductivity and Magnetism
- Supercapacitor Materials and Fabrication
- MXene and MAX Phase Materials
- Boron and Carbon Nanomaterials Research
- Heusler alloys: electronic and magnetic properties
- Graphene and Nanomaterials Applications
- Microstructure and mechanical properties
- Polymer Nanocomposite Synthesis and Irradiation
- Advanced Memory and Neural Computing
- Magneto-Optical Properties and Applications
- Nanowire Synthesis and Applications
- Quantum Mechanics and Non-Hermitian Physics
- Organic and Molecular Conductors Research
- ZnO doping and properties
- Iron-based superconductors research
- Nanoparticles: synthesis and applications
Université Grenoble Alpes
2025
Shanghai First People's Hospital
2025
Université de Toulouse
2025
Chinese Academy of Sciences
1997-2023
University of Science and Technology of China
2019-2022
Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments magnetic fields. Yet, contact-free optical measurements have rarely been explored. Here, we report observation of resonant circular dichroism (MCD) infrared range thin film MnBi_{2}Te_{4} exhibiting a spectral intensity that correlates with anomalous Hall effect. Both phenomena emerge field-driven phase transition from an antiferromagnet to canted ferromagnet....
Abstract Since its invention in the 1960s, one of most significant evolutions metal-oxide-semiconductor field effect transistors (MOS-FETs) would be three dimensionalized version that makes semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During past decades, width fin ( W $${}_{{\rm{fin}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow/><mml:mrow><mml:mi>fin</mml:mi></mml:mrow></mml:msub></mml:math> ) FinFETs...
Abstract Anisotropy in crystals arises from different lattice periodicity along crystallographic directions, and is usually more pronounced two dimensional (2D) materials. Indeed, the emerging 2D materials, electrical anisotropy has been one of recent research focuses. However, key understandings in-plane anisotropic resistance low-symmetry as well demonstrations model devices taking advantage it, have proven difficult. Here, we show that, few-layered semiconducting GaTe, conductivity...
The recent discovery of magnetic van der Waals (vdW) materials triggered a wealth investigations in science and now offers genuinely new prospects for both fundamental applied research. Although the catalog vdW ferromagnets is rapidly expanding, most them have Curie temperature below 300 K, notable disadvantage potential applications. Combining element-selective X-ray imaging force microscopy, we resolve at room domains domain walls micron-sized flakes CrTe2 ferromagnet. Flux-closure...
Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale van der Waals (vdW) crystals remains largely unexplored due challenge making an atomically-sharp interface from their layered structures. Here, we build vdW ferromagnetic Josephson junction (JJ) by inserting few-layer insulator Cr2Ge2Te6 into two layers superconductor NbSe2....
The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer (BLG) atop few-layered CrOCl, exhibiting an over-1-GΩ-resistance insulating state in a widely accessible gate voltage range. could be switched into metallic ratio up to 10
Abstract Interfacial moiré superlattices in van der Waals vertical assemblies effectively reconstruct the crystal symmetry, leading to opportunities for investigating exotic quantum states. Notably, a two-dimensional nanosheet has top and bottom open surfaces, allowing specific case of doubly aligned super-moiré lattice serve as toy model studying tunable symmetry complexity related electronic structures. Here, we show that by aligning graphene monolayer both encapsulating hexagonal boron...
ABSTRACT The treatment of spinal cord injury is crucial to prevent further damage and improve long‐term outcomes, as early intervention can stabilize the spine, control inflammation, facilitate recovery function. In present study, we synthesized a new metallic NPs investigated ability treat injury. bimetallic nickel/copper were using aqueous extract Artemisia annua . was chemically characterized. Bands at wavenumbers 1053, 1377–1664, 2922, 3417 cm −1 reveal functional groups’ presence C‐O,...
Abstract Magnetic orderings, i.e., the spontaneous alignment of electron spins below a critical temperature, have been playing key roles in modern science and technologies for both wide applications magnetic recording information storage vibrant potential solid state electronic spin devices (also known as spintronics) logic operations. In past decades, thanks to development thin film technologies, films via sputtering or epitaxial growth made spintronic possible at industrial scale. Yet...
The spin-orbit-torque (SOT) device is a promising candidate for the next-generation magnetic random-access memory; however, static in-plane field needed to induce deterministic switching main obstacle its application in circuits. In this work, we employ exchange coupling between $\mathrm{Co}$/$\mathrm{Ni}$/$\mathrm{Co}$ trilayer and $\mathrm{Tb}$/$\mathrm{Co}$ multilayers form domain wall (DW), by whose current-driven propagation field-free magnetization achieved. SOT efficiency of highly...
Transition metal phosphorous trichalcogenides (MPX3) have been extensively investigated as photodetectors due to their wide-bandgap semiconductor properties. However, the research involved in photoresponses at low temperatures remain blank. Here, hexagonal boron nitride (hBN)-encapsulated NiPS3 field effect transistors were fabricated by using dry-transfer technique, indicating strong stability under atmospheric environments. The devices with thickness of 10.4 nm, showed broad from...
Recently, gallium telluride (GaTe) has triggered much attention for its unique properties and offers excellent opportunities nanoelectronics. Yet it is a challenge to bridge the semiconducting few-layered GaTe crystals with metallic electrodes device applications. Here, we report method on fabricating electrode contacts field effect transistors (FETs) by controlled micro-alloying. The devices show linear I-V curves on/off ratio of ∼10 4 HfO 2 substrates. Kelvin probe force microscope (KPFM)...
Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments magnetic fields. Yet, contact-free optical measurements have rarely been explored. Magnetic dichroism (MCD), nonreciprocal absorption of circular polarized light, was theoretically linked to quantized anomalous Hall effect insulators can identify bands momenta responsible for underlying Berry Curvature (BC). Detecting BC through MCD faces two challenges: First,...
For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond silicon technology. Yet opening a gap controllable range doping, whilst keeping high conductance outside this gapped state, has remained grand challenge them thus far. Here we show that, by bringing Bernal-stacked bilayer graphene contact with an anti-ferromagnetic insulator CrOCl, strong insulating behavior is observed wide positive total...
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching main obstacle its application in highly integrated circuits. Instead of introducing effective into device, this work we present an alternative way achieve field-free current-driven magnetization switching. By adding Tb/Co multilayers at two ends current channel, assisting domain wall created by interlayer exchange coupling....