A5032080720- Topological Materials and Phenomena
- Graphene research and applications
- 2D Materials and Applications
- ZnO doping and properties
- Quantum and electron transport phenomena
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Ga2O3 and related materials
- Magnetic properties of thin films
- Advanced Condensed Matter Physics
- Iron-based superconductors research
- Nanowire Synthesis and Applications
- Physics of Superconductivity and Magnetism
- Gas Sensing Nanomaterials and Sensors
- Terahertz technology and applications
- Semiconductor Quantum Structures and Devices
- MXene and MAX Phase Materials
- Rare-earth and actinide compounds
- Advanced Fiber Laser Technologies
- Surface and Thin Film Phenomena
- Multiferroics and related materials
- Photonic and Optical Devices
- Advanced Thermoelectric Materials and Devices
- Copper-based nanomaterials and applications
- Advanced Semiconductor Detectors and Materials
Fudan University
2016-2025
State Key Laboratory of Surface Physics
2016-2025
Quantum Devices (United States)
2025
ShangHai JiAi Genetics & IVF Institute
2021-2024
Collaborative Innovation Center of Advanced Microstructures
2015-2021
Nanjing University
2016-2020
University of Chinese Academy of Sciences
2018
Iowa State University
2011-2013
Zhejiang University
2013
University of California, Los Angeles
2009-2012
The carrier recombination processes in ZnO quantum dots ($\ensuremath{\sim}4\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ diameter), nanocrystals ($\ensuremath{\sim}20\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ diameter) and bulk crystal have been studied using photoluminescence (PL) spectroscopy the temperature range from $8.5\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. obtained experimental data suggest that ultraviolet PL originates of...
Atomically thin 2D-layered transition-metal dichalcogenides have been studied extensively in recent years because of their intriguing physical properties and promising applications nanoelectronic devices. Among them, ReSe2 is an emerging material that exhibits a stable distorted 1T phase strong in-plane anisotropy due to its reduced crystal symmetry. Here, the anisotropic nature revealed by Raman spectroscopy under linearly polarized excitations which different vibration modes exhibit...
Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication ReS 2 field‐effect transistors is reported via encapsulation nanosheets a high‐ κ Al O 3 dielectric environment. Low‐temperature transport measurements allow to observe direct metal‐to‐insulator originating from strong electron–electron interactions. Remarkably, photodetectors based on exhibit...
An advanced visible/infrared dual-band photodetector with high-resolution imaging at room temperature is proposed and demonstrated for intelligent identification based on the 2D GaSe/GaSb vertical heterostructure. It resolves challenges of producing large-scale growth, achieving fast response speed, outstanding detectivity, lower manufacture cost, which are main obstacles industrialization 2D-materials-based photodetection.
To improve the interfacial charge transfer that is crucial to performance of perovskite solar cells, interface engineering in a device should be rationally designed. Here we have developed an method tune photovoltaic planar-heterojunction cells by incorporating MAPbBr3–xIx (MA = CH3NH3) quantum dots (QDs) between MAPbI3 film and hole-transporting material (HTM) layer. By adjustment Br:I ratio, as-synthesized QDs show tunable fluorescence band edge positions. When valence (VB) located below...
Charge-trap memory with high-κ dielectric materials is considered to be a promising candidate for next-generation devices. Ultrathin layered two-dimensional (2D) like graphene and MoS2 have been receiving much attention because of their fantastic physical properties potential applications in electronic Here, we report on dual-gate charge-trap device composed few-layer channel three-dimensional (3D) Al2O3/HfO2/Al2O3 gate stack. Because the extraordinary trapping ability both electrons holes...
Pulsed lasers operating in the 2-5 {\mu}m band are important for a wide range of applications sensing, spectroscopy, imaging and communications. Despite recent advances with mid-infrared gain media, lack capable pulse generation mechanism, i.e. passive optical switch, remains significant technological challenge. Here we show that response Dirac states crystalline Cd3As2, three-dimensional topological semimetal (TDS), constitutes an ideal ultrafast switching mechanism range. Significantly,...
Abstract Recently, layered two-dimensional ferromagnetic materials (2D FMs) have attracted a great deal of interest for developing low-dimensional magnetic and spintronic devices. Mechanically exfoliated 2D FMs were discovered to possess ferromagnetism down monolayer. It is therefore importance investigate the distinct properties at low dimensionality. Here, we report wafer-scale growth thin films Fe 3 GeTe 2 via molecular beam epitaxy, their exotic can be manipulated composition interface...
Dirac semimetals have attracted extensive attentions in recent years. It has been theoretically suggested that many-body interactions may drive exotic phase transitions, spontaneously generating a mass for the nominally massless electrons. So far, signature of interaction-driven transition lacking. In this work, we report high-magnetic-field transport measurements semimetal candidate ZrTe5. Owing to large g factor ZrTe5, Zeeman splitting can be observed at magnetic field as low 3 T. Most...
Electromagnetic (EM) wave pollution is harmful to human health and environment, thus it absolutely important develop new electromagnetic absorbing materials. MAX phases have been attracted more attention as a potential candidate for materials due their high conductivity nanolaminated structure. Herein, two magnetic with multiprincipal elements ((Ti
Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb was confirmed low-temperature photoluminescence measurements. An acceptor-bound exciton (A°X) emission observed at 3.358 eV 8 K. acceptor energy level the dopant is estimated to be 0.2 above valence band. Temperature-dependent Hall measurements performed films. At room temperature, one sample exhibited a low resistivity 0.2Ωcm, high...
We investigated photoluminescence (PL) from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si (100) by molecular-beam epitaxy. Well-resolved PL spectra were obtained completely dopant-activated samples with hole concentrations above 1.0×1018cm−3. From free electron to acceptor transitions, binding energy of 0.14 eV is determined, which in good agreement analytical results the temperature-dependent measurements. Another broad peak at 3.050 eV, shifts lower higher temperatures,...
Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological physics and exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation weak anti-localization oscillations originated from states in Bi2Se2Te crystals. Angle-resolved photoemission spectroscopy measurements on cleaved crystals show well-defined linear dispersion without intersection conduction band. The measured effect...
We report a direct observation of surface dominated conduction in an intrinsic Bi(2)Se(3) thin film with thickness six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological states suggest that Fermi level falls inside bulk band gap and is 53 ± 5 meV above Dirac point, which agreement 70 20 obtained scanning tunneling spectroscopies. Our results demonstrate great potential producing genuine insulator...
We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance n-type Ge is observable up to 225K. Our results indicate that relaxation rate closely related momentum scattering rate, which consistent with predicted Elliot-Yafet mechanism for Ge. bias dependence nonlocal lifetime also investigated.
Vertically stacking two-dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices realize complex functionality. However, fabrication such artificial heterostructures on a wafer scale with an atomically sharp interface poses unprecedented challenge. Here, we demonstrate convenient controllable approach for production wafer-scale 2D GaSe thin films by molecular beam epitaxy. In situ reflection high-energy electron diffraction oscillations Raman...
Abstract Owing to the coupling between open Fermi arcs on opposite surfaces, topological Dirac semimetals exhibit a new type of cyclotron orbit in surface states known as Weyl orbit. Here, by lowering carrier density Cd 3 As 2 nanoplates, we observe crossover from multiple-frequency single-frequency Shubnikov–de Haas (SdH) oscillations when subjected out-of-plane magnetic field, indicating dominant role transport. With increase SdH further develop into quantum Hall state with non-vanishing...
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce first MoS2-based spin-valves that employ monolayer MoS2 nonmagnetic spacer. In contrast with what is expected semiconducting band-structure of MoS2, vertically sandwiched-MoS2 layers exhibit...
Chiral anomaly, a non-conservation of chiral charge pumped by the topological nontrivial gauge fields, has been predicted to exist in Weyl semimetals. However, until now, experimental signature this effect exclusively relies on observation negative longitudinal magnetoresistance at low temperatures. Here, we report field-modulated pumping process and valley diffusion Cd3As2. Apart from conventional magnetoresistance, observe an unusual nonlocal response with field dependence up room...
Three-dimensional topological Dirac semimetals (TDSs) are a new kind of materials that exhibit linear energy dispersion in the bulk and can be viewed as three-dimensional graphene. It has been proposed TDSs driven to other exotic phases like Weyl semimetals, insulators superconductors by breaking certain symmetries. Here we report first transport experiment on Landau level splitting TDS Cd3As2 single crystals under high magnetic fields, suggesting removal spin degeneracy time reversal...
In this paper, we report the epitaxial growth of Bi2Se3 thin films on Si (111) substrate, using molecular beam epitaxy (MBE). We show that as-grown samples have good crystalline quality, and their surfaces exhibit terracelike quintuple layers. Angel-resolved photoemission experiments demonstrate single-Dirac-conelike surface states. These results combined with temperature- thickness-dependent magneto-transport measurements, suggest presence a shallow impurity band. Below critical temperature...