A5046278691- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Copper-based nanomaterials and applications
- Physics of Superconductivity and Magnetism
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Ferroelectric and Piezoelectric Materials
- MXene and MAX Phase Materials
University of Cambridge
2020-2025
The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free growth on ferroelectric substrates, whose states are by applied electric fields. Here we overcome this mismatch problem depositing an film ferromagnetic La0.7Sr0.3MnO3 a single crystal well matched SrTiO3 SrRuO3 that subsequently dissolved, permitting the transfer unstrained to...
The discovery of ferroelectric hafnium oxide has spurred great interest in the semiconductor industry, enabled by its complementary metal-oxide-semiconductor compatibility and scalability. However, many questions remain regarding origin phases tunability properties. In this work, we explore influence laser fluence on coercive field (Ec) 10 nm-thick epitaxial rhombohedrally distorted orthorhombic (r-d o) Hf0.5Zr0.5O2 (HZO) films grown pulsed deposition La0.7Sr0.3MnO3-buffered (001) SrTiO3...
The anomalous Hall effect (AHE) has been shown to be present in certain non-collinear antiferromagnets due their symmetry-breaking magnetic structure, and its magnitude is dependent primarily on the non-zero components of Berry curvature. In antiferromagnet Mn3NiN, phase contribution predicted have strong strain dependence, although practice, direct observation may obscured by other strain-related influences—for instance, transitions mediated strain. To unravel various contributions, we...