Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications silicon photonics, by providing integrated sources mutually coherent lines for terabit-per-second transceivers, parallel LiDAR, or photonics-assisted signal processing. Here, we report heterogeneously soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss nitride microresonators monolithic substrate....

We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1  kHz linewidth and over 37 mW output power, as well ring-assisted DBR less than 500 Hz linewidth. The lasers are fabricated by heterogeneously integrating III-V material on Si gain section plus 15 mm long, low-kappa grating in an ultralow-loss silicon waveguide. low waveguide loss (0.16 dB/cm) long narrow bandwidth (2.9 GHz) essential to reducing the while maintaining high power single-mode operation....

Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN circuits (PICs), but difficult fully integrate low-index due their large mismatch the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution enabled first-generation lasers waveguides....

A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed the hybrid silicon platform for 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and extrapolated 3 bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams 50 Gb/s. An extinction ratio 9.6 back to 9.4 after 16 km were obtained with drive voltage 2.2 V.

Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 photonic areas, with innovations nonlinear photonics, optical sensing, etc. However, the lack an laser high performance prohibits large-scale integration waveguides into complex circuits (PICs). Here, we demonstrate novel III-V/Si/Si3N4 structure to enable efficient electrically pumped...

Integrated ultra-low-loss waveguides are highly desired for integrated photonics to enable applications that require long delay lines, high-Q resonators, narrow filters, etc. Here, we present an silicon waveguide on 500 nm thick Silicon-On-Insulator (SOI) platform. Meter-scale million-Q resonators and tens of picometer bandwidth grating filters experimentally demonstrated. We design a low-loss low-reflection taper seamlessly integrate the with standard heterogeneous Si/III-V platform allow...

High- Q microresonators are indispensable components of photonic integrated circuits and offer several useful operational modes. However, these modes cannot be reconfigured after fabrication because they fixed by the resonator’s physical geometry. In this work, we propose a Moiré speedup dispersion tuning method that enables microresonator device to operate in any three Electrical Vernier coupled rings switches operating modality Brillouin laser, bright microcomb, dark microcomb operation on...

We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For device with 100 μm active segment, small-signal electro/optical response renders 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio 9.8 driving voltage swing only 2 V was at transmission rate 50 Gb/s. This represents significant improvement for modulators compatible integration silicon-based photonic integrated circuits.

Heterogeneous integration enables the construction of silicon (Si) photonic systems, which are fully integrated with a range passive and active elements including lasers detectors. Numerous advancements in recent years have shown that heterogeneous Si platforms can be extended beyond near-infrared telecommunication wavelengths to mid-infrared (MIR) (2-20 μm) regime. These hold potential for an extensive sensing applications necessary components MIR technologies now been demonstrated....

A hybrid silicon photonic integrated filter is proposed and demonstrated with a novel structure. This incorporates ring resonator in one arm of Mach-Zehnder interferometer making it possible to obtain programmable response. The optical consists 5-mm-long delay loop made low-loss waveguides thermal modulators resulting 0.164-nm free spectral range absolute phase tunability gain elements that allow for the tuning factor. microwave response this measured display 20 GHz.

A chip-scale optical source with integrated beam steering is demonstrated. The chip was fabricated using the hybrid silicon platform and incorporates an on-chip laser, waveguide splitter, amplifiers, phase modulators, surface gratings to comprise phased array across a 12° field of view in one axis. Tuning used achieve 1.8°(steered axis)×0.6°(nonsteered axis) width 7 dB background suppression for arbitrary direction within view.

Continuously tunable lasers with a narrow linewidth are at the core of large number coherent optical systems. Integration these devices on single chip will enable applications that require minimal size, weight, power, and cost. In this work, we demonstrate 3 nm-continuously laser operating around 1550 nm intrinsic 5.7 kHz. The device is fully integrated silicon-on-insulator platform gain provided by bonded III-V layer. attained an extended cavity consists Vernier ring-based mirror passive...

We demonstrate a hybrid silicon modulator operating up to 40 Gb/s with 11.4 dB extinction ratio. The has voltage-length product of 2.4 V-mm and chirp -0.75 over the entire bias range. As switch, it switching time less than 20 ps.

Thin-film lithium niobate (TFLN) is an attractive platform for photonic applications on account of its wide bandgap, large electro-optic coefficient, and nonlinearity. Since these characteristics are used in systems that require a coherent light source, size, weight, power, cost can be reduced reliability enhanced by combining TFLN processing heterogeneous laser fabrication. Here, we report the fabrication devices wafer also coprocessing five different GaAs-based III–V epitaxial structures,...

Mainstream silicon photonic integrated circuits are based on compact and low-loss silicon-on-insulator (SOI) waveguide platforms. However, monolithic SOI-based photonics provides only a limited number of functional device types. Here, to extend the on-chip capabilities, we propose general heterogeneous integration approach embed highly nonlinear III-V (AlGaAs) into SOI platform. We develop AlGaAs-on-SOI with Si waveguides showcase sub-milliwatt-threshold ( <mml:math...

Demand for low-noise, continuous-wave, frequency-tunable lasers based on semiconductor integrated photonics has been advancing in support of numerous applications. In particular, an important goal is to achieve narrow spectral linewidth, commensurate with bulk-optic or fiber-optic laser platforms. Here, we report laser-frequency-stabilization experiments a heterogeneously III/V-Si widely tunable and high-finesse, thermal-noise-limited photonic resonator. This hybrid architecture offers...

We demonstrate a heterogeneously integrated laser on silicon exhibiting sub-20 kHz Lorentzian linewidth over wavelength tuning range of 58 nm from 1350 to 1408 nm, which are record values date for E-band lasers in the literature. Wide is achieved with an Si ring-resonator-based Vernier mirror, also significantly reduces linewidth. Such performance leverages mature heterogeneous III–V/Si platform and marks important milestone optical fiber communications reaching visible wavelengths via...

This letter demonstrates a high-speed and energy-efficient lumped electroabsorption modulator on the hybrid silicon platform for an uncooled operation at up to 80 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C . 100-μm-long has 3-dB bandwidth of 30 GHz. Eye diagrams measured temperatures 20 , 40 C, 60 with corresponding adjustment input wavelength bias voltage show dynamic extinction ratio around 5 dB Gb/s 1-V drive swing energy...

The remarkable frequency stability of resonant systems in the optical domain (optical cavities and atomic transitions) can be harnessed at scales accessible by electronics using division. This capability is revolutionizing technologies spanning time keeping to high-performance electrical signal sources. A version technique called 2-point division (2P-OFD) proving advantageous for application In 2P-OFD, an cavity anchors two spectral endpoints defined lines a comb. comb need not...

Mid-infrared light sources are attracting attention for use in spectroscopic sensing, thermal imaging, and infrared countermeasures. Integration of these on Si-based waveguides allows more functional complex photonic circuits to be integrated a single chip. This paper focuses the key aspects this platform. The operation silicon-on-insulator beyond 4.0 μm wavelength with increasing waveguide core thickness is discussed, effects various cladding materials propagation loss demonstrated. Low...

Surprising fragmentation reactions in different xanthene dyes have been investigated by means of photodissociation and collision‐induced dissociation a 9.4 T FT‐ICR mass spectrometer. It is shown that extensive rearrangement lead to the formation unexpected fragments which are identified for first time use high resolving power. The observed an example quinoidal even‐electron cation. Copyright © 2011 John Wiley &amp; Sons, Ltd.

A monolithic 25 Gbaud DQPSK receiver based on delay interferometers and balanced detection has been designed fabricated the hybrid Si/InGaAs platform. The integrated 30 µm long InGaAs p-i-n photodetectors have a responsivity of 0.64 A/W at 1550 nm 3dB bandwidth higher than GHz. interferometer shows time 39.2 ps an extinction ratio 20 dB. demodulation Gb/s DPSK signal by single branch demonstrates its correct working principle.

The fragmentation reactions of Rhodamine B have been investigated by the use electrospray ionization mass spectra in a high resolving ion cyclotron resonance spectrometer. Using resolution, it could be shown that loss 44 units from molecular is due to propane; measured masses were inconsistent with carbon dioxide. These conclusions are supported using deuterium-labeled B. This sample again only shows fully-deuterated propane verifying high-resolution data. findings illustrate very clearly...