A5007294300- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Semiconductor Lasers and Optical Devices
- Mechanical and Optical Resonators
- Advanced Fiber Optic Sensors
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Cancer Treatment and Pharmacology
- Spectroscopy and Laser Applications
- Advanced Frequency and Time Standards
- Semiconductor Quantum Structures and Devices
- Neural Networks and Reservoir Computing
- Laser-Matter Interactions and Applications
- Photonic Crystals and Applications
- Diamond and Carbon-based Materials Research
- Advanced Measurement and Metrology Techniques
- Optical Coherence Tomography Applications
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Advanced MEMS and NEMS Technologies
- Spanish Literature and Culture Studies
- Photorefractive and Nonlinear Optics
- Marine Toxins and Detection Methods
- Photonic Crystal and Fiber Optics
- Advanced Optical Sensing Technologies
University of California, Santa Barbara
2019-2025
Joint Quantum Institute
2021
University of Maryland, College Park
2021
Physical Measurement Laboratory
2021
National Institute of Standards and Technology
2021
University of Colorado Boulder
2021
University of California System
2021
The University of Texas at Austin
2018-2019
Omega Optics (United States)
2019
Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications silicon photonics, by providing integrated sources mutually coherent lines for terabit-per-second transceivers, parallel LiDAR, or photonics-assisted signal processing. Here, we report heterogeneously soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss nitride microresonators monolithic substrate....
We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1 kHz linewidth and over 37 mW output power, as well ring-assisted DBR less than 500 Hz linewidth. The lasers are fabricated by heterogeneously integrating III-V material on Si gain section plus 15 mm long, low-kappa grating in an ultralow-loss silicon waveguide. low waveguide loss (0.16 dB/cm) long narrow bandwidth (2.9 GHz) essential to reducing the while maintaining high power single-mode operation....
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN circuits (PICs), but difficult fully integrate low-index due their large mismatch the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution enabled first-generation lasers waveguides....
Integrated photonics has profoundly affected a wide range of technologies underpinning modern society
The performance of silicon photonic components and integrated circuits has improved dramatically in recent years. As a key enabler, heterogeneous integration not only provides the optical gain which is absent from native Si substrates enables complete functionalities on chip, but also lays foundation versatile device engineering. This paper reviews progress high-performance photonics using integration, with emphasis ultra-low-loss waveguides, single-wavelength lasers, comb including phased...
Photonic integrated circuits are widely used in applications such as telecommunications and data-centre interconnects1-5. However, optical systems microwave synthesizers6, gyroscopes7 atomic clocks8, photonic still considered inferior solutions despite their advantages size, weight, power consumption cost. Such high-precision highly coherent favour ultralow-noise laser sources to be with other components a compact robustly aligned format-that is, on single chip-for replace bulk optics...
Abstract The past decade has witnessed major advances in the development and system-level applications of photonic integrated microcombs, that are coherent, broadband optical frequency combs with repetition rates millimeter-wave to terahertz domain. Most these based on harnessing dissipative Kerr solitons (DKS) microresonators anomalous group velocity dispersion (GVD). However, microcombs can also be generated normal GVD using localized structures referred as dark pulses, switching waves or...
Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in field photonics, whereby low-noise signals generated by down-conversion ultrastable optical references using a frequency comb
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 photonic areas, with innovations nonlinear photonics, optical sensing, etc. However, the lack an laser high performance prohibits large-scale integration waveguides into complex circuits (PICs). Here, we demonstrate novel III-V/Si/Si3N4 structure to enable efficient electrically pumped...
This paper presents recent results on widely-tunable narrow-linewidth semiconductor lasers using a ring-resonator based mirror as the extended cavity. Two generations of heterogeneous Si/InP photonic platform are presented. The first-generation lasers, with total footprint smaller than 0.81 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , showed an intrinsic linewidth ~2 kHz over 40 nm wavelength tuning range across C+L bands....
Abstract Significant improvements in III–V/Si epitaxy have pushed quantum dots (QDs) to the forefront of Si photonics. For efficient, scalable, and multifunctional integrated systems be developed, a commercially viable solution must found allow efficient coupling QD laser output waveguides. In this work, design, fabrication, characterization such platform are detailed. Record‐setting evanescent distributed feedback lasers on with 3 dB modulation bandwidth 13 GHz, threshold current 4 mA,...
Lasers with hertz linewidths at time scales of seconds are critical for metrology, timekeeping, and manipulation quantum systems. Such frequency stability relies on bulk-optic lasers reference cavities, where increased size is leveraged to reduce noise but the trade-off cost, hand assembly, limited applications. Alternatively, planar waveguide-based enjoy complementary metal-oxide semiconductor scalability yet fundamentally from achieving by stochastic thermal sensitivity. In this work, we...
Normal group velocity dispersion (GVD) microcombs offer high comb line power and pumping efficiency compared to bright pulse microcombs. The recent demonstration of normal GVD using CMOS foundry-produced microresonators is an important step toward scalable production. However, the chromatic devices large impairs generation broadband Here, we report development a microresonator in which reduced due coupled-ring resonator configuration. Operating turnkey self-injection locking mode, integrated...
High- Q microresonators are indispensable components of photonic integrated circuits and offer several useful operational modes. However, these modes cannot be reconfigured after fabrication because they fixed by the resonator’s physical geometry. In this work, we propose a Moiré speedup dispersion tuning method that enables microresonator device to operate in any three Electrical Vernier coupled rings switches operating modality Brillouin laser, bright microcomb, dark microcomb operation on...
We demonstrate a CMOS-foundry-based <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">S</mml:mi> </mml:mrow> <mml:msub> mathvariant="normal">i</mml:mi> <mml:mn>3</mml:mn> </mml:msub> mathvariant="normal">N</mml:mi> <mml:mn>4</mml:mn> </mml:math> photonic platform at blue and violet wavelengths that exhibits record-high intrinsic Qs of around 6 M 453 nm <mml:mo><</mml:mo> <mml:mn>1</mml:mn> <mml:mspace...
Visible, high-coherence optical sources are important to a wide range of applications spanning spectroscopy precision timing. Integration these on semiconductor chip is necessary step if the systems that use devices be made compact, portable, and low power. Here, by self-injection-locking 1560 nm distributed feedback laser high-Q silicon-nitride resonator, 780 second-harmonic signal generated via photogalvanic-induced second-order nonlinearity. A record-low frequency noise floor 4Hz 2 /Hz...
Heterogeneously integrated lasers in the O-band are a key component realizing low-power optical interconnects for data centers and high-performance computing. Quantum-dot-based materials have been particularly appealing light generation due to their ultralow lasing thresholds, small linewidth enhancement factor, low sensitivity reflections. Here, we present widely tunable quantum-dot heterogeneously on silicon-on-insulator substrate. The tuning mechanism is based Vernier dual-ring geometry,...
This paper describes the design, fabrication, and record performance of a new class ultra-wideband wavelength tuning, ultra-low noise semiconductor laser, Integrated Coherent Tunable Laser (ICTL). The ICTL device is designed for, fabricated in, CMOS foundry based Silicon Photonics platform, utilizing heterogeneous integration III-V material to create integrated gain section laser–enabling high-volume mass-market manufacturing at low cost with high reliability. incorporates three or more loss...
Continuously tunable lasers with a narrow linewidth are at the core of large number coherent optical systems. Integration these devices on single chip will enable applications that require minimal size, weight, power, and cost. In this work, we demonstrate 3 nm-continuously laser operating around 1550 nm intrinsic 5.7 kHz. The device is fully integrated silicon-on-insulator platform gain provided by bonded III-V layer. attained an extended cavity consists Vernier ring-based mirror passive...
High-Q Si ring resonators play an important role in the development of widely tunable heterogeneously integrated lasers. However, while a high Q-factor (Q > 1 million) is for laser cavity, parasitic high-power density resonator can deteriorate performance at power levels due to nonlinear loss. Here, we experimentally show that this detrimental effect happen moderate (a few milliwatts) where typical lasers work. We further compare different resonators, including extended and Si3N4 provide...
Next-generation communications, radar, and navigation systems will extend exploit the higher bandwidth of millimeter-wave domain for increased communication data rates as well radar with sensitivity spatial resolution. However, realizing these advantages require generation signals low phase noise in simple compact form-factors. Photonic integration addresses this challenge provides a path toward simplified portable, low-noise mm-wave generation. We leverage advances by heterodyning two...
The unique benefits of Fabry–Pérot resonators as frequency-stable reference cavities and an efficient interface between atoms photons make them indispensable resource for emerging photonic technologies. To bring these performance to next-generation communications, computation, time-keeping systems, it will be necessary develop strategies integrate compact with integrated circuits. In this paper, we demonstrate a novel reflection cancellation circuit that utilizes numerically optimized...