Huan Wei

ORCID: 0000-0003-0861-7702
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Research Areas
  • Organic Electronics and Photovoltaics
  • Perovskite Materials and Applications
  • Conducting polymers and applications
  • 2D Materials and Applications
  • ZnO doping and properties
  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Memory and Neural Computing
  • Organic Light-Emitting Diodes Research
  • Thin-Film Transistor Technologies
  • Power Systems and Renewable Energy
  • Quantum Dots Synthesis And Properties
  • Organic and Molecular Conductors Research
  • Electrochemical sensors and biosensors
  • Advanced Thermoelectric Materials and Devices
  • Molecular Junctions and Nanostructures
  • Supercapacitor Materials and Fabrication
  • High-Voltage Power Transmission Systems
  • Micro and Nano Robotics
  • Analytical Chemistry and Sensors
  • Electrochemical Analysis and Applications
  • Photoreceptor and optogenetics research
  • Advanced Algorithms and Applications
  • Graphene research and applications
  • Transition Metal Oxide Nanomaterials
  • Polymer Surface Interaction Studies

Hunan University
2008-2025

Changsha University
2023-2024

Hong Kong Baptist University
2024

Shenzhen University
2023-2024

Southwest University
2016

Northwest Normal University
2014

Beijing Polytechnic
1999

Beijing University of Technology
1999

Abstract Two narrow‐bandgap block conjugated polymers with a (D1–A1)–(D2–A2) backbone architecture, namely PBDB‐T‐ b ‐PIDIC2T and ‐PTY6, are designed synthesized for single‐component organic solar cells (SCOSCs). Both contain same donor polymer, PBDB‐T, but different polymerized nonfullerene molecule acceptors. Compared to all previously reported materials SCOSCs, ‐PTY6 exhibit narrower bandgap better light harvesting. When incorporated into the short‐circuit current density ( J sc ) is...

10.1002/adma.202101295 article EN Advanced Materials 2021-06-27

Abstract The electron transport layer (ETL) is a critical component in achieving high device performance and stability organic solar cells. Conjugated polyelectrolytes (CPEs) have become an attractive alternative due to film‐forming properties ease of preparation. However, p‐type CPEs generally exhibit poor charge mobility conductivity, incorporation electron‐withdrawing units forming alternated D‐A conjugated backbone can make up for these deficiencies. Herein, the ratio withdrawing...

10.1002/adfm.202303603 article EN Advanced Functional Materials 2023-05-13

Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for facial recognition systems. While neuromorphic systems offer integrated sensing-memory-processing functions, they still struggle with efficient antispoofing techniques. Here we introduce a system incorporating multidimensional deep ultraviolet (DUV) optoelectronic synapses to address these challenges. To overcome the complexity and high cost of producing DUV using traditional wide-bandgap...

10.1021/acs.nanolett.4c01356 article EN Nano Letters 2024-05-23

Solution-processed metal halide perovskites hold immense potential for the advancement of next-generation field-effect transistors (FETs). However, instability perovskite-based has impeded their progress and practical applications. Here, ambient-stable high-performance FETs based on 2D Dion-Jacobson phase tin perovskite BDASnI4 , which high film quality excellent electrical properties, are reported. The channels established by engineering crystallization process via employment ammonium salt...

10.1002/adma.202305648 article EN Advanced Materials 2023-08-22

Quantum-dot light-emitting diodes (QLEDs) are solution-processed electroluminescence devices with great potential as energy-saving, large-area, and low-cost display lighting technologies. Ideally, the organic hole-transport layers (HTLs) in QLEDs should simultaneously deliver efficient hole injection transport, effective electron blocking, robust electrochemical stability. However, it is still challenging for a single HTL to fulfill all these stringent criteria. Here, we demonstrate general...

10.1126/sciadv.ado0614 article EN cc-by-nc Science Advances 2024-08-16

Doping has been extensively studied as an effective means of modulating the electrical properties two-dimensional (2D) semiconductors. However, precise methods for p- and n-type doping in specific regions remain underdeveloped, hindering high-performance devices integrated circuits. We present a novel technique, template-assisted dry transfer (TADTD), which enables control over regions, patterns, polarities, levels 2D Utilizing photolithography, TADTD allows creation patterned dopant films...

10.1021/acs.nanolett.4c06220 article EN Nano Letters 2025-02-17

Abstract Doping is a powerful technique for tuning the electrical properties of organic semiconductors (OSCs). Although numerous studies are performed on OSC doping, thus far only few n‐type dopants have been developed. Herein, two low‐cost nucleophilic bases reported, namely 1,5,7‐Triazabicyclo [4.4.0] dec‐5‐ene (TBD) and 1,5‐Diazabicyclo [4.3.0] non‐5‐ene (DBN) n‐doping OSCs. The found to significantly enhance conductivity In particular, compared classic n‐dopant...

10.1002/adfm.202102768 article EN Advanced Functional Materials 2021-05-21

Doping is an important technique for semiconductor materials and devices, yet effective controllable doping of organic-inorganic halide perovskites still a challenge. Here, we demonstrate facile way to dope two-dimensional Sn-based perovskite (PEA)

10.1016/j.isci.2022.104109 article EN cc-by iScience 2022-03-17

Doping is a powerful technique for engineering the electrical properties of organic semiconductors (OSCs), yet efficient n-doping OSCs remains central challenge. Herein, discovery two superbase dopants, namely P2-t-Bu and P4-t-Bu as ultra-efficient n-dopants reported. Typical n-type such N2200 PC61 BM are shown to experience significant increase conductivity upon doping by dopants. In particular, optimized P2-t-Bu-doped reaches record-high value 2.64 S cm-1 . The polaron generation...

10.1002/adma.202300084 article EN Advanced Materials 2023-03-17

Transparent field-effect transistors (FETs) are attacking intensive interest for constructing fancy "invisible" electronic products. Presently, the main technology realizing transparent FETs is based on metal oxide semiconductors, which have wide-bandgap but generally demand sputtering technique or high-temperature (>350 °C) solution process fabrication. Herein, a general device fabrication strategy halide perovskite (MHP) shown, by successfully obtained using low-temperature (<150 process....

10.1002/advs.202300133 article EN cc-by Advanced Science 2023-01-26

Molecular doping is an effective approach to tune the charge density and optimize electrical performance of conjugated polymers.However, introduction dopants, on other hand, may disturb polymer microstructure disrupt transport path, often leading a decrease carrier mobility deterioration conductivity doped films.Here we show that dopant-induced disorder can be overcome by rational engineering polymer-dopant interactions, resulting in remarkable enhancement conductivity.Benchmark...

10.1016/j.mtadv.2023.100360 article EN cc-by-nc-nd Materials Today Advances 2023-03-16

Abstract Doping plays a crucial role in modulating and enhancing the performance of organic semiconductor (OSC) devices. In this study, critical dopants is underscored shaping morphology structure OSC films, which turn profoundly influences their properties. Two dopants, trityl tetrakis(pentafluorophenyl) (TrTPFB) N , ‐dimethylanilinium tetrakis(pentafluorophenyl)borate (DMA‐TPFB), are examined for doping effects on poly(3‐hexylthiophene) (P3HT) PBBT‐2T host OSCs. It found that although...

10.1002/smtd.202400084 article EN Small Methods 2024-05-13

Abstract Unipolar p‐ and n‐type organic field‐effect transistors (OFETs) are essential for constructing circuits complementary designs crucial high‐performance electronics. Traditionally, fabricating these requires separate p‐type semiconductors (OSCs), which complicates the process due to intricate patterning, protection of first OSC layer, considerable material wastage. In this work, an innovative approach is introduced, inspired by silicon transistor fabrication obtain unipolar OFETs,...

10.1002/adfm.202413880 article EN Advanced Functional Materials 2024-09-20

Abstract Fluorine (F) and chlorine (Cl) substitution in organic semiconductors has been found to be effective for enhancing the performance of photovoltaics. However, effect these substitutions on charge transport properties remains elusive. A series naphthalene diamide (NDI)‐based copolymers: N2200, corresponding fluorinated N2200 (F‐N2200), chlorinated (Cl‐N2200) are employed fabricate field‐effect transistors. Gate‐dependent temperature‐dependent mobility measured analyzed reveal...

10.1002/aelm.201901241 article EN Advanced Electronic Materials 2020-03-06

Ruddlesden–Popper (RP) tin halide perovskites (THPs), exemplified by PEA2SnI4, are promising two-dimensional semiconductors for optoelectronic applications, yet their field-effect transistors (FETs) often suffer from high operating voltages and stability issues. Addressing these challenges, we developed a novel approach integrating ion gel dielectrics composed of PVDF-HFP [EMIM+][TFSI–] with achieving FETs record-low as low 2 V. Additionally, substituting PEA+ BA+ in BA2SnI4 FETs, achieve...

10.1021/acsami.4c19269 article EN ACS Applied Materials & Interfaces 2025-02-05

Abstract Doping plays a crucial role in tuning the electrical properties of organic semiconductors (OSCs), yet n‐doping presents more challenges than p‐doping. A significant limitation is poor miscibility between n‐dopants and OSCs, which hinders practical application high‐performance devices. Herein, novel n‐dopant, 2,8,9‐Trimethyl‐2,5,8,9‐tetraaza‐1‐phosphabicyclo‐[3.3.3]undecane (TMP) introduced, exhibits exceptional with OSCs while maintaining excellent doping performance comparable to...

10.1002/adfm.202500631 article EN Advanced Functional Materials 2025-04-07

Abstract Solid‐state organic electrochemical transistors (SS‐OECTs) are promising candidates for next‐generation wearable and bioelectronic applications due to their high transconductance low‐voltage operation. However, conventional SS‐OECTs rely on ion gels with ionic liquid concentrations, which compromise mechanical robustness scalability. This study addresses these limitations by developing thin‐film OECTs (TF‐OECTs) using solid electrolytes significantly reduced concentrations...

10.1002/smtd.202500322 article EN Small Methods 2025-05-13

Abstract Conventional UV/DUV phototransistors, which rely on wide‐bandgap semiconductor channels, encounter issues with material availability, processing complexity, and performance tunability. Perovskite‐gated phototransistors (PGPTs) are introduced that decouple photoresponse charge transport by using metal halide perovskites (MHPs) as dielectric layers non‐wide‐bandgap semiconductors channels. This design offers flexibility, simplified processing, enhanced performance. Using the 2D...

10.1002/adma.202500477 article EN Advanced Materials 2025-05-30

Narrow bandgap (NBG) block copolymers are promising materials to realize single-material organic solar cells (SMOSCs) that combine high performance with minimized fabrication procedures.

10.1039/d2ta02307e article EN Journal of Materials Chemistry A 2022-01-01

Abstract Ladder‐like aromatic diketones (LADK), which possess a coplanar π‐extended geometry, high electron deficiency as well various attractive optoelectronic properties, are demonstrated the promising candidates in building small‐molecule organic electron‐transporting materials, yet reports on direct integration of these structural motifs into n‐type polymers rarely accessed. Herein, it is that possibility realizing unipolar characteristics such acceptor system by developing two novel...

10.1002/adfm.202210846 article EN Advanced Functional Materials 2022-11-27

2D lead halide perovskites (LHPs) are highly attractive for fabrication of thin-film transistors (TFTs) due to their promising charge transport properties, mitigated ion migration effect, and high stability. However, thus far there have been no reports LHP TFTs that can operate well at room temperature. Herein, we report a simple device strategy TFTs. successfully obtained via low-temperature solution process, they show mobility approaching 10−2 cm2 V−1 s−1 an on/off ratio about 104 with...

10.1016/j.xcrp.2022.101217 article EN cc-by-nc-nd Cell Reports Physical Science 2023-01-01

In this paper; an imidazolium ionic liquid (IL) is used to functionalize multi-walled carbon nanotubes (MWNTs) by covalent bonding on the MWNT surface. The functionalization not only provides a hydrophilic surface for ion accessibility but also prevents aggregation of MWNTs. IL-functionalized MWNTs were then applied electrochemical determination dihydroxybenzene isomers hydroquinone (HQ); catechol (CC); and resorcinol (RC), exhibiting excellent recognition ability towards three compounds....

10.3390/molecules21050617 article EN cc-by Molecules 2016-05-14

Abstract The development of techniques for tuning/controlling the properties electronic devices such as field‐effect transistors (FETs) is important optimization device performance or realization custom‐designed functions. Here, a simple method tuning 2D perovskite ((PEA) 2 SnI 4 ) FETs by transferring organic semiconductor PDVT‐10 films onto (PEA) to form van der Waals heterojunctions (vdWHs) presented. By varying electrical with doping technique, can be effectively tuned in terms on‐state...

10.1002/aelm.202200148 article EN Advanced Electronic Materials 2022-04-19
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