A5051190595- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Ferroelectric and Piezoelectric Materials
- Machine Learning in Materials Science
- Supercapacitor Materials and Fabrication
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- MXene and MAX Phase Materials
- Nanomaterials for catalytic reactions
- Electronic and Structural Properties of Oxides
- Metal and Thin Film Mechanics
- Gas Sensing Nanomaterials and Sensors
- Advanced Materials Characterization Techniques
- Advancements in Battery Materials
- 2D Materials and Applications
- Advanced Condensed Matter Physics
- Metallurgy and Material Science
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Photonic Crystals and Applications
- Inorganic Fluorides and Related Compounds
- High-Temperature Coating Behaviors
- Acoustic Wave Resonator Technologies
- Cardiac Structural Anomalies and Repair
Institut des Nanotechnologies de Lyon
2016-2025
École Centrale de Lyon
2019-2025
Université Claude Bernard Lyon 1
2019-2025
Centre National de la Recherche Scientifique
2019-2025
Institut National des Sciences Appliquées de Lyon
2024-2025
École d'Ingénieurs en Chimie et Sciences du Numérique
2024-2025
Swiss Federal Laboratories for Materials Science and Technology
2022-2023
Xi'an Jiaotong University
2021
University of California, Los Angeles
2021
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
2016
The wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/HZO/TiN structures deposited by magnetron sputtering on silicon are compared. maximum remanant polarization higher than 21 μC/cm2 both samples, but strong difference observed in the electrical behavior. For mesa sample, between and initial remanent only 3 μC/cm2, whereas it around 14 non-mesa case. We discuss root causes of these behaviors light GIXRD results.
The crystallization of ferroelectric (Hf,Zr)O2 thin films is achieved by playing on the deposition pressure during reactive magnetron sputtering from a Hf/Zr metallic target. Postdeposition annealing was tried at different temperatures in order to optimize quality samples. Structural characterizations are performed transmission electron microscopy (TEM) and electrical carried out. TEM analyses reveal that samples deposited low working show no orthorhombic phase, thus not ferroelectric,...
For ferroelectric random access memory (FRAM) with HfO2-based materials, the wake-up effect and imprint have to be limited. Here, electrical behavior of different samples is investigated during retention tests on woken-up at room temperature. Retention properties are compared or without alternations voltage pulses opposite signs. First, alternations, oscillates between two values that believed too high for reading operation industrial FRAM memories. This oscillation not sole cause remanent...
This study demonstrates the effectiveness of AFE-PUND, a revisited Positive Up Negative Down (PUND) protocol for characterizing antiferroelectric (AFE) materials, in analyzing $ZrO_2$ films across different thicknesses, revealing key trends. The proposed AFE-PUND method enables isolation switching currents from non-switching contributions, allowing precise extraction remanent polarization and coercive field hysteresis loops. increases with film thickness, reflecting enhanced domain...
This work introduces the AFE-PUND measurement method, an original positive up negative down (PUND) protocol intended to accurately study antiferroelectric (AFE) thin-film behavior. As for its FE counterpart, method isolates switching currents from nonswitching contributions, enabling a precise extraction of saturation polarization and coercive fields hysteresis loop curves. In this paper, was deployed on AFE ZrO2 films varying thicknesses. The results reveal that increases with film...
The room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium oxide, (Hf,Zr)O2, thin solid films is achieved with a single hafnium/zirconium, Hf/Zr, alloy target by reactive magnetron sputtering. After rapid thermal annealing (RTA), crystallization our samples analyzed grazing incidence x-ray diffraction. Changing the pressure inside chamber during leads to grow amorphous or monoclinic phase (m-phase). authors demonstrate that if (Hf,Zr)O2 are crystallized in m-phase after...
Abstract In the past 5 years, transfer of epitaxial oxide thin films has drawn a renewed interest in scientific community. The major challenge this technology is to minimize appearance extended bulk defects such as plastic deformations, cracks, and delamination, which are induced by process new host substrate. work, procedure for where rigid bond final holder obtained via metallic Au/Ag bonding layer presented. Here, SrRuO 3 (SRO) /SrTiO (STO) grown on water‐soluble Sr Al 2 O 6 sacrificial...
Over the last fifteen years, ferroelectric (FE) and antiferroelectric (AFE) ultra-thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. AFE ZrO2, in particular, holds promise nanosupercapacitors, owing to its potential energy storage density (ESD) efficiency (η). This work assesses high-performance Hf1−xZrxO2 thin encapsulated by TiN electrodes that show linear dielectric (LD), FE, behavior. A...
Field effect transistors (FETs) using two-dimensional molybdenum disulfide (MoS2) as the channel material has been considered one of most potential candidates for future complementary metal-oxide-semiconductor technology with low power consumption. However, understanding correlation between device performance and properties, particularly devices scaling-down lengths, is still insufficient. We report in this paper back-gate FETs chemical-vapor-deposition grown transferred MoS2 Zr doped HfO2...
Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. Antiferroelectric $ZrO_2$, in particular, holds promise nanosupercapacitors, owing to its potential energy storage density (ESD) efficiency ($\eta$). This work assesses high-performance $Hf_{1-x}Zr_{x}O_2$ encapsulated by TiN electrodes that show linear dielectric (LD),...
Flexible Electronics In article number 2201458, Jordan Bouaziz, Fabio La Mattina, and colleagues describe the use of water-soluble Sr3Al2O6 oxide to enable fabrication complex membranes a few tens nanometers in size. The transfer these other substrates opens possibility exploiting countless properties for realization new electronic devices.