A5046636159- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Optical Network Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Photonic Communication Systems
- Advanced Optical Network Technologies
- Solid State Laser Technologies
- Advanced Optical Sensing Technologies
- Laser Design and Applications
Oclaro (Japan)
2013-2019
Socionext (Japan)
2003-2011
A 1.3-μm directly modulated distributed feedback laser was newly developed by adopting an asymmetric corrugation pitch grating structure and InGaAlAs multiquantum well active layer with both a high optical confinement factor differential gain. low threshold current large saturation in light-current characteristics at temperature were obtained 3-dB bandwidth relaxation oscillation frequency electro-optical also achieved over wide range. As result, clear back-to-back eye openings for 26-Gbaud...
A novel travelling-wave electroabsorption optical modulator, electrically matched for 50 Ω loads of driving circuit drivers, was developed. The scattering parameter electric reflection (S11) from this modulator is less than −20 dB at 20 GHz. It can thus enable a 40 Gbit/s, 2 km SMF transmission with 0.3 penalty 1.3 µm wavelength.
Uncooled 10-Gbit/s, 80- km SMF transmission was demonstrated for the first time using a 1.55-μm InGaAlAs EA/DFB laser. A power penalty below 2-dB achieved over wide temperature range from 15°C to 95°C.
We have developed a high-speed electroabsorption modulator integrated distributed feedback (EA/DFB) lasers. Transmission performance over 10km was investigated under 25Gbps and 43Gbps modulation. In addition, the feasibility of wide temperature range operation also investigated. An uncooled EA/DFB laser can contribute to realization low-power-consumption, small-footprint cost-effective transceiver module. this study, we used temperature-tolerant InGaAlAs materials in an EA modulator. A...
Uncooled 10-Gbps, 1.55-μm InGaAlAs EA/DFB laser has been realized. Error free 80-km transmission was demonstrated up to 95 °C. A power penalty below 2-dB with over 9.8-dB dynamic extinction ratio achieved wide temperature range.
Four newly developed directly modulated DFB lasers operating in the 1.3-μm CWDM wavelength range demonstrated 106-Gb/s PAM4 operation for transmission over 2-km SMF at temperatures of 25, 50 and 70 °C. Eye diagrams DMLs were clearly opened after 500-m transmission, even °C, their TDECQ values equal or lower than 3.4 dB BTB configuration up to The results dispersion penalties less +0.8 from 25 These indicate that four can realize a cost-effective transceiver with low power consumption 400GbE beyond.
A 1.3-mum-range EA/DFB laser demonstrated 43-Gbps 10-km transmission for the first time. The achieved clearly opened eye diagrams with dynamic extinction ratio of over 7-dB wide temperature range.
High speed InP lasers have been developed for 400Gbit/s interconnections. Electro-absorption modulator integrated DFB were demonstrated 106-Gbit/s PAM4 with 0.9 Vpp from 20 to 85°C. eye-openings obtained using directly modulated 25 80°C.
A 1.3-μm-range uncooled electroabsorption/distributed-feedback (EA/DFB) laser was demonstrated. Incorporating an InGaAlAs multiple quantum well (MQW) modulator, a low-capacitance structure, and butt-joint integration, this successfully demonstrated 43-Gb/s 10-km transmission for the first time. The developed achieved clearly opened eye diagrams with dynamic extinction ratio of over 7 dB wide temperature range (25 °C to 85 °C).
The 106-Gb/s PAM4 operation of four DMLs in the 1.3-μm CWDM range demonstrated < 2.0 dB TDECQ after 5-km transmission. Clear eye openings and BER below KP4-FEC limit (2.2 × 10 −4 ) were achieved even 10-km
Get PDF Email Share with Facebook Tweet This Post on reddit LinkedIn Add to CiteULike Mendeley BibSonomy Citation Copy Text H. Yamamoto, M. Hirai, O. Kagaya, K. Nogawa, Naoe, N. Sasada, Okayasu, S. Makino, Shinoda, T. Kitatani, and Tanaka, "Compact Low Power Consumption 1.55-μm Electro-Absorption modulator integrated DFB-LD TOSA for 10-Gbit/s 40-km Transmission," in Optical Fiber Communication Conference National Optic Engineers Conference, OSA Technical Digest (CD) (Optica Publishing Group,...
We have developed a high-speed electroabsorption modulator integrated distributed feedback (EA/DFB) lasers. To realize the high-speed, small-footprint, low-power-consumption and cost-effective semiconductor light source, we investigated several key technologies. Newly 1.3 mum range 25 Gbps 43 EA/DFB laser showed good transmission performance over 10 km single mode fiber. These devices are suitable for next generation, high speed network systems, 100 40 Ethernet.
A 53.2 Gbit/s NRZ operation was achieved over a wide temperature range (WTR) of 20-80°C using direct modulation 1.3-μm InGaAlAs-MQW DFB lasers. Moreover, clear eye openings were successfully demonstrated after 2-km SMF transmission from 20 to 80°C for 400G datacenter applications.
Clear eye-openings were obtained for 53-Gbaud PAM4 (106-Gb/s) operation from 25°C to 80°C the first time by using a newly developed 1.3-μm directly modulated DFB laser. Open eyes successfully demonstrated after 10-km SMF transmission.
DOI: 10.1049/ic:20070289 ISBN: 978-3-8007-3042-1 Location: Berlin, Germany Conference date: 16-20 Sept. 2007 Format: PDF A modulated output-power more than +3.7 dBm, a dynamic extinction-ratio over 9.3 dB, and power- penalty below 1.8 dB were achieved for 10.7-Gbit/s, 40-km transmission wide temperature range from 10°C to 85°C. (2 pages) Inspec keywords: distributed feedback lasers; optical fibre communication; quantum well electro-optical modulation; integrated optics; electroabsorption;...
Four directly modulated DFB lasers with 1.3-μm CWDM range demonstrated 106-Gb/s PAM4 operation for transmission over 2-km SMF. Dispersion penalties of the were less than 0.8 dB after up to 70ºC.
4 ch × 25.8 Gbit/s WDM transmission over 40 km single mode fiber was demonstrated. Minimum receiver sensitivity each lane after less than −26.0 dBm, proving the transceiver will meet IEEE 100GBASE-ER4 specifications.
New uncooled 1,550-nm InGaAlAs electroabsorption-modulators and their laser-integration technologies were developed for 10/40-Gbit/s small-form-factor modules. For the first time, 10-Gbit/s 40-km SMF transmission 40-Gbit/s operation achieved up to 85/spl deg/C.
We have developed the uncooled electroabsorption modulator integrated distributed feedback (EA/DFB) lasers for small-footprint and low-power-consumption transceiver modulus. In this study, we used temperature-tolerant InGaAlAs materials in EA modulator. investigated 10.7-Gbps, 40-km transmission performances over wide temperature range. The dynamic extinction ratio was 9.9 dB 13.3 at 10oC 85oC. modulated output power more than +3.7 dBm even long-term reliability also under APC condition...
We report on the operation of a 25.8 Gbit/s DML TOSA over wide temperature range (WTR) with extremely high eye-mask margin for Ethernet applications. The is comprised co-axial TO-CAN package an LC-type receptacle optical connector and FPC electrical interface. By combining bandwidth InGaAlAs WTR-DFB chip novel design, mask margins exceeding 30% at case -- 5 degC to 75 achieved. This enables small form factor modules, such as SFP+, operate up 70 degC.
Uncooled InP-Mach-Zehnder modulator monolithically integrated with SOA was demonstrated for 10.7 Gbit/s 1600 ps/nm transmission at C-band wavelengths. Output power obtained over +3.2 dBm 0-85°C +2 optical input by using SOA.