Alexia Valéry

ORCID: 0000-0003-1155-6023
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About
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Research Areas
  • Electron and X-Ray Spectroscopy Techniques
  • Advanced Electron Microscopy Techniques and Applications
  • Semiconductor materials and interfaces
  • Surface and Thin Film Phenomena
  • Silicon Nanostructures and Photoluminescence
  • Thin-Film Transistor Technologies
  • Advanced Materials Characterization Techniques
  • Force Microscopy Techniques and Applications
  • Phase-change materials and chalcogenides
  • Silicon and Solar Cell Technologies
  • Chalcogenide Semiconductor Thin Films
  • Advanced Battery Materials and Technologies
  • Advancements in Battery Materials
  • Semiconductor materials and devices
  • Advanced Battery Technologies Research
  • Integrated Circuits and Semiconductor Failure Analysis
  • Silicon Carbide Semiconductor Technologies
  • Nanowire Synthesis and Applications
  • Electromagnetic Scattering and Analysis
  • Photonic and Optical Devices
  • Microstructure and mechanical properties
  • Advanced Memory and Neural Computing
  • Non-Destructive Testing Techniques
  • Aluminum Alloy Microstructure Properties
  • Sparse and Compressive Sensing Techniques

STMicroelectronics (France)
2015-2024

STMicroelectronics (Czechia)
2022

Centre National de la Recherche Scientifique
2016-2017

Science et Ingénierie des Matériaux et Procédés
2015-2017

Université Grenoble Alpes
2013-2017

IBM Research - Almaden
2013

Institut polytechnique de Grenoble
2013

Li-air batteries have generated enormous interest as potential high specific energy alternatives to existing storage devices. However, suffer from poor rechargeability caused by the instability of organic electrolytes and carbon cathodes. To understand address this rechargeability, it is essential elucidate efficiency in which O2 converted Li2O2 (the desired discharge product) during oxidized back charge. In Letter, we combine many quantitative techniques, including a newly developed...

10.1021/jz401659f article EN The Journal of Physical Chemistry Letters 2013-08-20

Summary The diffraction patterns acquired with a transmission electron microscope (TEM) contain Bragg reflections related to all the crystals superimposed in thin foil and crossed by beam. Regarding TEM‐based orientation phase characterisation techniques, nondissociation of these signals is usually considered as main limitation for indexation patterns. A new method identify information distinct but overlapped grains presented. It consists subtracting signature dominant crystal before...

10.1111/jmi.12599 article EN Journal of Microscopy 2017-07-04

This paper discusses the effect of back-end line (BEOL) process on cell performance for a Phase-Change Memory embedded in 28nm FD-SOI platform (ePCM). The impact BEOL is first shown by describing microscopic evolution active Ge-rich GST alloy during process. Ge clustering has been proven to occur fabrication process, impacting pristine resistance and after forming performance. Two different processes are then benchmarked terms key An optimized identified, an extensive electrical...

10.1109/essderc53440.2021.9631807 article EN 2021-09-13

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: nm thick amorphous layers deposited thermal oxide, followed by solid phase crystallization anneal. Rib waveguides fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM SIMS) used assess the origin losses. Optimal deposition annealing...

10.1364/oe.26.005983 article EN cc-by Optics Express 2018-02-27

The effect of back-end line (BEOL) process on cell performance and reliability Phase-Change Memory embedded in a 28nm FD-SOI platform (ePCM) is discussed. microscopic evolution the Ge-rich GST alloy during focus first part paper. A new metric for quantification active material modifications introduced to better follow its with sequence. Ge clustering has been shown occur fabrication, impacting pristine resistance after forming performance. Two different BEOL processes are then benchmarked...

10.1109/jeds.2022.3162755 article EN cc-by-nc-nd IEEE Journal of the Electron Devices Society 2022-01-01

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on texture microstructure NiPt silicide thin films. The powerful use in plan-view geometry allows here for both a mapping grain orientation intra-grain even if these crystalline grains become very small. With this unique combination local large-scale probes, we find that formation n p doped substrates using annealing...

10.1063/1.4985279 article EN publisher-specific-oa Journal of Applied Physics 2017-06-12

One of the most promising Embedded Phase Change Memory (ePCM) integration scheme is wall architecture, which relies on dedicated Heater element to thermally switch device. A good control this a key factor satisfy performance requirements automotive market. In paper, optimization TiSiN system in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.019\mu \mathrm{m}^{2}\text{ePCM}$</tex> cell realized with 28nm FDSOI technology extensively reported....

10.1109/iedm19574.2021.9720669 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2021-12-11

10.7567/ssdm.2016.ps-1-11 article EN Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2016-09-28

Abstract not Available.

10.1149/ma2013-02/6/391 article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2013-10-27

Abstract Dopants imaging using scanning capacitance microscopy (SCM) and spreading resistance are used for identifying doped areas within a device, the latter being analyzed either in top view or side view. This paper presents sample preparation workflow based on focused ion beam (FIB) use. A discussion is then conducted to assess advantages of method factors monitor vigilantly. Dealing with FIB machining, any geometry can be achieved, as it transmission electron (TEM) preparation:...

10.31399/asm.cp.istfa2018p0209 article EN Proceedings - International Symposium for Testing and Failure Analysis 2018-11-01

Emitter resistivity should be optimized to increase the electrical performances of bipolar transistors. A non-selective Si:As deposition at temperature higher than 600 °C is currently used fabricate such emitters: poly grows on dielectrics whereas monocrystalline Si. fully material would needed reduce emitter resistivity, however. Therefore, a new process performed 550 has been developed with Si 2 H 6 as precursor. mono-crystallinity achieved by coupling amorphous and solid phase epitaxy...

10.1149/10904.0159ecst article EN ECS Transactions 2022-09-30

In this paper, epitaxial growths or depositions were performed, in 300 mm RP-CVD chambers, on two types of templates: N-type Si substrates poly-Si/oxide/ P-type substrates. SiH 4 +HCl+H 2 and Cl +HCl+GeH +H chemistries used to deposit SiGe layers between 675-750°C 10-20 Torr such wafers. Monocrystalline polycrystalline growth kinetics similar for intrinsic SiGe. Meanwhile, boron incorporation different mono-Si:B, mono-SiGe:B, poly-Si:B poly-SiGe:B layers. While the impact B atoms is well...

10.1149/10904.0217ecst article EN ECS Transactions 2022-09-30

Reduced Pressure Chemical Vapor Deposition (RP-CVD) Epitaxy bellow 600 °C is studied for 3D sequential integration [1] where cyclic deposition needed. Another approach can be useful with Si epitaxy at temperature : the of amorphous on dielectric during non-selective combined solid phase regrowth (SPER) to extend monocrystalline area. Indeed, using above epitaxy, a polycrystalline film formed dielectric. This technique has been used in heterojunction bipolar transistor base [2] and also...

10.1149/ma2022-02321198mtgabs article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2022-10-09

Monocrystalline SiGe alloys can be used instead of monocrystalline Si in order to increase the performances devices such as heterojunction bipolar transistors (HBTs) [1]. The epitaxial growth blanket, layers on with a dichlorosilane + germane hydrochloric acid chemistry was extensively investigated literature [2,3]. Similarly, switch from polycrystalline favorable, for instance, Complementary-MOS (C-MOS) [4,5]. However, blanket by Reduced-Pressure Vapor Deposition (RP-CVD) and has not been...

10.1149/ma2022-02321214mtgabs article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2022-10-09
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