A5045699875- Electron and X-Ray Spectroscopy Techniques
- Advanced Electron Microscopy Techniques and Applications
- Semiconductor materials and interfaces
- Surface and Thin Film Phenomena
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Advanced Materials Characterization Techniques
- Force Microscopy Techniques and Applications
- Phase-change materials and chalcogenides
- Silicon and Solar Cell Technologies
- Chalcogenide Semiconductor Thin Films
- Advanced Battery Materials and Technologies
- Advancements in Battery Materials
- Semiconductor materials and devices
- Advanced Battery Technologies Research
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
- Electromagnetic Scattering and Analysis
- Photonic and Optical Devices
- Microstructure and mechanical properties
- Advanced Memory and Neural Computing
- Non-Destructive Testing Techniques
- Aluminum Alloy Microstructure Properties
- Sparse and Compressive Sensing Techniques
STMicroelectronics (France)
2015-2024
STMicroelectronics (Czechia)
2022
Centre National de la Recherche Scientifique
2016-2017
Science et Ingénierie des Matériaux et Procédés
2015-2017
Université Grenoble Alpes
2013-2017
IBM Research - Almaden
2013
Institut polytechnique de Grenoble
2013
Li-air batteries have generated enormous interest as potential high specific energy alternatives to existing storage devices. However, suffer from poor rechargeability caused by the instability of organic electrolytes and carbon cathodes. To understand address this rechargeability, it is essential elucidate efficiency in which O2 converted Li2O2 (the desired discharge product) during oxidized back charge. In Letter, we combine many quantitative techniques, including a newly developed...
Summary The diffraction patterns acquired with a transmission electron microscope (TEM) contain Bragg reflections related to all the crystals superimposed in thin foil and crossed by beam. Regarding TEM‐based orientation phase characterisation techniques, nondissociation of these signals is usually considered as main limitation for indexation patterns. A new method identify information distinct but overlapped grains presented. It consists subtracting signature dominant crystal before...
This paper discusses the effect of back-end line (BEOL) process on cell performance for a Phase-Change Memory embedded in 28nm FD-SOI platform (ePCM). The impact BEOL is first shown by describing microscopic evolution active Ge-rich GST alloy during process. Ge clustering has been proven to occur fabrication process, impacting pristine resistance and after forming performance. Two different processes are then benchmarked terms key An optimized identified, an extensive electrical...
Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: nm thick amorphous layers deposited thermal oxide, followed by solid phase crystallization anneal. Rib waveguides fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM SIMS) used assess the origin losses. Optimal deposition annealing...
The effect of back-end line (BEOL) process on cell performance and reliability Phase-Change Memory embedded in a 28nm FD-SOI platform (ePCM) is discussed. microscopic evolution the Ge-rich GST alloy during focus first part paper. A new metric for quantification active material modifications introduced to better follow its with sequence. Ge clustering has been shown occur fabrication, impacting pristine resistance after forming performance. Two different BEOL processes are then benchmarked...
We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on texture microstructure NiPt silicide thin films. The powerful use in plan-view geometry allows here for both a mapping grain orientation intra-grain even if these crystalline grains become very small. With this unique combination local large-scale probes, we find that formation n p doped substrates using annealing...
One of the most promising Embedded Phase Change Memory (ePCM) integration scheme is wall architecture, which relies on dedicated Heater element to thermally switch device. A good control this a key factor satisfy performance requirements automotive market. In paper, optimization TiSiN system in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.019\mu \mathrm{m}^{2}\text{ePCM}$</tex> cell realized with 28nm FDSOI technology extensively reported....
Abstract not Available.
Abstract Dopants imaging using scanning capacitance microscopy (SCM) and spreading resistance are used for identifying doped areas within a device, the latter being analyzed either in top view or side view. This paper presents sample preparation workflow based on focused ion beam (FIB) use. A discussion is then conducted to assess advantages of method factors monitor vigilantly. Dealing with FIB machining, any geometry can be achieved, as it transmission electron (TEM) preparation:...
Emitter resistivity should be optimized to increase the electrical performances of bipolar transistors. A non-selective Si:As deposition at temperature higher than 600 °C is currently used fabricate such emitters: poly grows on dielectrics whereas monocrystalline Si. fully material would needed reduce emitter resistivity, however. Therefore, a new process performed 550 has been developed with Si 2 H 6 as precursor. mono-crystallinity achieved by coupling amorphous and solid phase epitaxy...
In this paper, epitaxial growths or depositions were performed, in 300 mm RP-CVD chambers, on two types of templates: N-type Si substrates poly-Si/oxide/ P-type substrates. SiH 4 +HCl+H 2 and Cl +HCl+GeH +H chemistries used to deposit SiGe layers between 675-750°C 10-20 Torr such wafers. Monocrystalline polycrystalline growth kinetics similar for intrinsic SiGe. Meanwhile, boron incorporation different mono-Si:B, mono-SiGe:B, poly-Si:B poly-SiGe:B layers. While the impact B atoms is well...
Reduced Pressure Chemical Vapor Deposition (RP-CVD) Epitaxy bellow 600 °C is studied for 3D sequential integration [1] where cyclic deposition needed. Another approach can be useful with Si epitaxy at temperature : the of amorphous on dielectric during non-selective combined solid phase regrowth (SPER) to extend monocrystalline area. Indeed, using above epitaxy, a polycrystalline film formed dielectric. This technique has been used in heterojunction bipolar transistor base [2] and also...
Monocrystalline SiGe alloys can be used instead of monocrystalline Si in order to increase the performances devices such as heterojunction bipolar transistors (HBTs) [1]. The epitaxial growth blanket, layers on with a dichlorosilane + germane hydrochloric acid chemistry was extensively investigated literature [2,3]. Similarly, switch from polycrystalline favorable, for instance, Complementary-MOS (C-MOS) [4,5]. However, blanket by Reduced-Pressure Vapor Deposition (RP-CVD) and has not been...