A5057331399- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Advanced Memory and Neural Computing
- Liquid Crystal Research Advancements
- Semiconductor materials and devices
- Transition Metal Oxide Nanomaterials
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Nonlinear Optical Materials Research
- Advanced Data Storage Technologies
- Parallel Computing and Optimization Techniques
- Adsorption, diffusion, and thermodynamic properties of materials
- Ferroelectric and Negative Capacitance Devices
- Gas Sensing Nanomaterials and Sensors
- Photonic and Optical Devices
- Low-power high-performance VLSI design
- Silicon and Solar Cell Technologies
- Silicone and Siloxane Chemistry
- Advanced Photocatalysis Techniques
- Electrostatic Discharge in Electronics
- Solid-state spectroscopy and crystallography
- Electronic and Structural Properties of Oxides
STMicroelectronics (Czechia)
2017-2024
STMicroelectronics (Italy)
2013-2023
Politecnico di Milano
2023
STMicroelectronics (France)
2010-2021
STMicroelectronics (Switzerland)
2008-2015
Institut de Microélectronique, Electromagnétisme et Photonique
2012
CEA Grenoble
2010-2011
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2010-2011
Université Grenoble Alpes
2010-2011
Institut polytechnique de Grenoble
2010-2011
In this letter, we present a study on the electrical behavior of phase-change memories (PCMs) based GeTe active material. PCMs show, first, extremely rapid SET operation (yielding gain more than one decade in energy per bit with respect to standard GST PCMs), second, robust cycling, up 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> , 30-ns and RESET stress time, third, better retention at high temperature PCMs. These results,...
Phase change memory (PCM) is the most mature among novel concepts. Embedded PCM technology can be a real breakthrough for process cost saving and performances. Nevertheless, specific applications some improvement in high temperature data retention characteristics needed. In this paper, we present an optimized Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Sb xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> Te...
Emerging memories (EMs) have been intensively explored for embedded non-volatile memory (eNVM) applications because of their advantages over conventional eNVMs. There has limited production microcontrollers with EM (eEMs) but the eEMs market not taken off yet. The disruptive innovation undertaken by advanced digital CMOS technologies now provides a compelling motivation radical change, giving great opportunity success. Phase change (PCM) proven, in stand-alone memories, to be most mature...
For the first time we propose a 28nm FDSOI e-NVM solution for automotive micro-controller applications using Phase Change Memory (PCM) based on chalcogenide ternary material. A complete array organization is described exploiting body biasing capability of Fully Depleted Silicon On Insulator (FDSOI) transistors. Leveraging triple gate oxide integration with high-k metal (HKMG) stack, true 5V transistor high analog performance has been demonstrated. Reliable PCM 0,036um <sup...
A 90 nm embedded PCM technology is presented. For the first time storage element has been integrated in a 6-ML advanced CMOS platform, exploiting LV n-mos device as cell selector. Very good working window and intrinsic reliability both for selector MOS have proven. The full integration of 4 Mb ePCM macrocell with very few additional masks minimal process tuning confirms this viable solution floating gate non-volatile memory replacement applications.
In this paper, we investigate the impact of Ge-enrichment coupled to N- or C-doping in Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> based materials on low-resistance state (LRS SET) performance combined with high-resistance (HRS RESET) high-temperature data retention (HTDR) Phase-Change Memories (PCM). These innovative have been integrated state-of-the-art memory cell...
To satisfy the growing market demand for embedded nonvolatile memory, alternative solutions to Flash technology are currently under investigation. Among these, phase change memory (PCM) is attracting strong interest due low cost of integration with CMOS front-end and good scalability. Embedded PCM, however, must feature high reliability during both packaging functional stages. This paper studies PCM based on Ge-rich GeSbTe, providing evidence resistance drift decay in reset set states....
In this paper we present an enhancement of our 28nm FDSOI-PCM solution using Bipolar Junction Transistor (BJT) selector co-integrated with triple gate oxide devices scheme (logic/1,8V/5V) for advanced automotive microcontroller designs. Leveraging FDSOI substrate, innovative Super-STI (SSTI) has been developed enabling 0,019um <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> PCM cell. It is the densest eNVM cell reported so far, based on...
The commercialization of Phase-Change Memories (PCM), based on the well-known GST compound, have been recently started, tailored for consumer applications. Despite other excellent performances (i.e. low-power, scalability,...), data retention is assured up to 85°C, still limited automotive market segment. Alternative active material able comply with stringent requirements applications should possibly exhibit higher crystallization temperature (T <sub...
For the first time, we present a Phase Change Memory (PCM) device with an optimized Ge-rich GeSbTe (GST) alloy integrated on 12Mb test vehicle. We confirm that PCM can guarantee high data retention in extended temperature range and provide understanding of thermal stability two programmed states. show how elemental distribution reaches equilibrium at core storage element after electrical activation cell, which relates to strong opposition against crystallization RESET state. also highlight...
In this paper, a detailed investigation of the electrical performances Phase-Change Memory test devices integrating carbon-doped Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> (named GST-C) is reported. PCM with 5% carbon atomic content yields more than 50% current reduction compared to reference GST devices, programming window widely superior two orders magnitude and cycling...
In this paper we investigate the impact of N- doping in optimized Ge-rich Ge2Sb2Te5 materials on device programming and storing performance. We integrate these alloys state-of-the-art Phase- Change Memory (PCM) cells analyze efficiency SET operation N-doped undoped memory cells, comparing voltage based with current programming. This aspect is extensively investigated through electrical characterization, physico-chemical analysis electro-thermal simulations. The thermal stability devices...
This paper investigates material and electrical properties of a new chalcogenide alloy for Phase-Change Memories (PCM): Carbon-doped GeTe (named GeTeC). First, several physico-chemical, optical analyses have been performed on full-sheet depositions in order to understand the intrinsic GeTeC phase-change behavior, characterize structure composition amorphous crystalline states. Then, with two different Carbon doping (4% 10%) has integrated pillar-type analytical PCM cells. Physico-chemical...
In this work, a comprehensive study of Ge-rich Phase Change Memory set and reset state retention realized by coupling electrical physical characterizations is presented. The presence amorphous residuals inside the active region PCM devices is, for first time, demonstrated through High Resolution Scanning Transmission Electron Microscopy. role such formations was studied means character-ization supported modeling analysis. By comparing low high resistive behavior physics has been analytically...
Phase change memory (PCM) is one of the most attractive solutions for embedded applications, thanks to low cost integration with CMOS front-end and good scaling behavior. Embedded PCM (ePCM) must feature high-temperature stability during operation solder bonding [1]. This work addresses reliability based on Ge-rich GeSbTe [2]. We evidence resistance drift decay in set state first time, which attributed grain-boundary relaxation grain growth. A unified model presented, capable predicting...
In this paper we present a study of Phase-Change non-volatile Memory (PCM) devices integrating carbon-doped GeTe as chalcogenide material. Carbon-doped GeTe, named GeTeC, remarkably lowers the RESET current and features very good data retention properties well. particular, PCM with 10% carbon inclusions (named GeTeC10%) yields about 30% reduction respect to pure GST. Furthermore, our GeTeC10% memory cells are expected guarantee 10-years-lifetime-temperature 127°C, which is one highest ever...
This paper discusses the effect of back-end line (BEOL) process on cell performance for a Phase-Change Memory embedded in 28nm FD-SOI platform (ePCM). The impact BEOL is first shown by describing microscopic evolution active Ge-rich GST alloy during process. Ge clustering has been proven to occur fabrication process, impacting pristine resistance and after forming performance. Two different processes are then benchmarked terms key An optimized identified, an extensive electrical...
A flexible program circuit for chalcogenide non-volatile memories was developed within a 4Mb ePCM (embedded phase change memory) implemented in 90 nm CMOS technology. The proposed architecture ensures adaptability with respect to process variations and is fully compatible single pulse approach or multiple algorithm multi-level operation. In the former write throughput of 2 MB/s achieved.
Quenching-time characterization is the way to measure speed of chalcogenide material transform from amorphous (RESET) state crystalline (SET) one after application a proper programming pulse. It here proposed study impact process and conditions on cell performances, highlighting possible composition variation, modifications physical dimension PCM active volume (the dome).
The reliability of optimized Ge-rich GST "Wall" Phase Change Memory (PCM) devices is investigated at high operating temperatures. Endurance more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cycles ensured up to 175 °C. A cell thermal resistance 45% higher wrt standard demonstrated, granting reduced crosstalk. Increased temperatures show have a limited impact on the programming speed. Finally, specific sequences are proposed...