A5091727858- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Copper Interconnects and Reliability
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Transition Metal Oxide Nanomaterials
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- Force Microscopy Techniques and Applications
- Neuroscience and Neural Engineering
- Perovskite Materials and Applications
- Luminescence Properties of Advanced Materials
- High voltage insulation and dielectric phenomena
- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- GaN-based semiconductor devices and materials
- Diamond and Carbon-based Materials Research
- Power Transformer Diagnostics and Insulation
- Silicon and Solar Cell Technologies
- Neural dynamics and brain function
- Electrochemical Analysis and Applications
CEA Grenoble
2013-2024
CEA LETI
2005-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2005-2024
Institut polytechnique de Grenoble
2013-2024
Université Grenoble Alpes
2018-2024
STMicroelectronics (France)
2011-2021
STMicroelectronics (India)
2011-2021
Centre National de la Recherche Scientifique
1991-2021
Direction de la Recherche Technologique
2021
Centre d’Élaboration de Matériaux et d’Études Structurales
2021
The statistics of electrical breakdown field (Ebd) HfO2 and SiO2 thin films has been evaluated over multiple length scales using macroscopic testing standardized metal-oxide-semiconductor (TiN∕SiO2∕Si) metal-insulator-metal (TiN∕HfO2∕TiN) capacitors (10−2mm2–10μm2 area) on a full 200mm wafer along with conductive-atomic-force microscopy. It is shown that Ebd follows the same Weibull distribution when data are scaled area. This overall scaling suggests defect density ∼1015cm−2 ∼40MV∕cm for...
Amorphous Ta2O5 films were deposited by low pressure chemical vapor deposition (LPCVD) and plasma enhanced (PECVD) at temperatures below 450 °C. These used to fabricate metal–oxide–metal (MOM) structures with titanium nitride (TiN) electrodes. The electrical properties of the MOM capacitance investigated means current–voltage capacitance–voltage characteristics in 100 Hz–1 MHz frequency range. It is shown that conduction mechanism changed from Schottky emission, for LPCVD material,...
A back-end integrated Resistive Random Access Memory (ReRAM) (TiN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ti/TiN) in advanced 28nm CMOS process is evaluated. Significant operating margins and high performances identified at device level (read margin, low power set/reset, endurance retention) are demonstrated to be significantly reduced on larger statistics, i.e. characterized within 1kbit arrays. The High Resistance State...
For the first time, we present a Phase Change Memory (PCM) device with an optimized Ge-rich GeSbTe (GST) alloy integrated on 12Mb test vehicle. We confirm that PCM can guarantee high data retention in extended temperature range and provide understanding of thermal stability two programmed states. show how elemental distribution reaches equilibrium at core storage element after electrical activation cell, which relates to strong opposition against crystallization RESET state. also highlight...
The electrical properties of polycrystalline aluminum nitride (AlN) films grown by reactive dc magnetron sputtering are investigated in the transient and steady-state regimes through metal-insulator-metal (MIM) structures with molybdenum (Mo) as metal electrodes. Measurements current-time, current-voltage, current-temperature characteristics performed on AlN MIM structures. extracted dielectric constant is 9.9. current observed to follow empirical Curie–Von Schweidler law its dependence...
This article deals with the resistance switching mechanism observed in HfO2 based resistive memories. The current voltages cycles are recorded for temperatures ranging from 4 to 300 K. main result is that nearly temperature independent considered domain. on state conductance remains proportional compliance current. experimental results discussed help of a phenomenological model which compared whole data set. In framework this approach one found mainly caused by electromigration force and...
An analytical model for the electric field and temperature dependence of nonlinear dielectric susceptibility amorphous oxides is developed compared with experimental measurements on metal-insulator-metal capacitors. Using model, capacitance variations applied field, as well temperature, are tied to an increase in system entropy due thermal expansion lattice. In addition, our explains CV-curve sign reversal (slope versus voltage curve) that frequently seen metal oxide SiO2
This letter deals with the electrical and wideband frequency characterizations of metal-insulator-metal capacitors integrating medium-¿ material, ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . In particular, this focuses on effect voltage linearity these material. The dependence voltage-capacitance coefficient (VCC) ¿ is, for first time, studied from 1 kHz to GHz. Intrinsic or extrinsic material origin VCC are discussed.
A dielectric breakdown model based on the phenomenological description of nucleation and growth filaments is proposed. This involves different characteristic times according to interfacial or bulk nature processes. The resulting time distribution presents Weibull bimodal shape relative values those times. In particular, variation in slope with thickness observable when process larger. Bimodal shapes are characteristics same range surface scaling distributions influences apparent slopes....
Yttrium oxide-based metal–insulator–metal (MIM) capacitors were investigated. The dielectric films grown on Si/TiSi2/TiN substrates using a low thermal budget metalorganic chemical vapor deposition process (T⩽350 °C). Low-temperature (450 °C) or high-temperature (700 postdeposition annealings carried out in different atmospheres (O2 argon). X-ray diffraction, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry used to determine the structural microstructural changes films....
This study aims to characterize the oxide based Resistive Random Access Memory memory cell at nanoscale. stacks were characterized by conductive atomic force microscopy (C-AFM) under vacuum. The AFM tips served as top electrode. effect of different tip materials, polarities, bottom electrodes, and compliance currents on resistive switching is described compared with results obtained for devices micrometric scale. experimental are then interpreted a filament model. An interpretation in terms...
In this paper we investigate the impact of N- doping in optimized Ge-rich Ge2Sb2Te5 materials on device programming and storing performance. We integrate these alloys state-of-the-art Phase- Change Memory (PCM) cells analyze efficiency SET operation N-doped undoped memory cells, comparing voltage based with current programming. This aspect is extensively investigated through electrical characterization, physico-chemical analysis electro-thermal simulations. The thermal stability devices...
We investigate the effects of thickness reduction and specific postannealing treatments in order to improve electrical properties yttrium oxide-based metal-insulator-metal (MIM) capacitors. The films were grown on Si∕TiSi2∕TiN substrates at 350°C by a low temperature process (pulsed liquid injection plasma-enhanced metal organic chemical vapor deposition). Although leads an increase capacitance density, other characteristics (the voltage linearity, leakage currents, breakdown) are seriously...
This paper deals with the electrical and wideband frequency characterizations of metal-insulator-metal (MIM) capacitors integrating medium-k material ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . First, in situ properties are characterized a range from dc up to 5 GHz by using microstrip waveguide method. The loss tangent permittivity extracted frequencies GHz. We then investigate evolution parameters, such as capacitance density,...
In order to simulate the electro-thermal characteristics of our devices and reproduce phase change mechanisms PCM material during set reset operations, we have developped a finite element solver coupled with Phase Field Method. Retention simulations for full GST layers are first presented. Then simulations, low high current, starting from partially amorphized domain The different cristallized domains current highlighted by TEM images reveal impact on crystallization mechanisms. Phase-Field...
The ternary alloy of germanium, antimony, and tellurium (GST) is widely used as a material for phase-change memories. In particular, the stoichiometric compound Ge2Sb2Te5 exhibits rapid congruent crystallization. To increase temperature at which spontaneous crystallization erases stored information, alloys that are enriched in germanium have been investigated. Their accompanied by segregation eventually nucleation new, germanium-rich phase. order to model redistribution components time...
This paper presents the fabrication, together with morphological and electrical characterizations of complementary resistive switches using nanodamascene process. The as-fabricated devices are fully embedded in an insulating oxide, opening way for further process steps such as three-dimensional monolithic integration. Complementary performance is consistent random access memories fabricated characterized same procedure that showed R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...