A5057033374- Semiconductor materials and devices
- Phase-change materials and chalcogenides
- Copper Interconnects and Reliability
- Chalcogenide Semiconductor Thin Films
- Advancements in Semiconductor Devices and Circuit Design
- Metal and Thin Film Mechanics
- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- Advanced Memory and Neural Computing
- Liquid Crystal Research Advancements
- Medical Imaging Techniques and Applications
- Advanced Surface Polishing Techniques
- Nuclear Physics and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Transition Metal Oxide Nanomaterials
- Radiation Detection and Scintillator Technologies
- Semiconductor materials and interfaces
- Nonlinear Optical Materials Studies
- Ferroelectric and Negative Capacitance Devices
- Molecular Junctions and Nanostructures
- Silicon and Solar Cell Technologies
- Advanced X-ray and CT Imaging
- Carbon Nanotubes in Composites
- Thin-Film Transistor Technologies
Smiths Detection (France)
2017-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2011-2023
CEA LETI
2012-2023
Université Grenoble Alpes
2011-2023
CEA Grenoble
2010-2022
Institut polytechnique de Grenoble
2008-2021
IBM (United States)
2015
Centre National de la Recherche Scientifique
2009-2014
Université Joseph Fourier
2014
Laboratoire National des Champs Magnétiques Intenses
2014
Fluorescence is increasingly used for in vivo imaging and has provided remarkable results. Yet this technique presents several limitations, especially due to tissue autofluorescence under external illumination weak penetration of low wavelength excitation light. We have developed an alternative optical by using persistent luminescent nanoparticles suitable small animal imaging. These can be excited before injection, their distribution followed real-time more than 1 h without the need any...
In this letter, we present a study on the electrical behavior of phase-change memories (PCMs) based GeTe active material. PCMs show, first, extremely rapid SET operation (yielding gain more than one decade in energy per bit with respect to standard GST PCMs), second, robust cycling, up 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> , 30-ns and RESET stress time, third, better retention at high temperature PCMs. These results,...
In this contribution, two main challenges for wafer-to wafer 3D integration are investigated: bonding quality (including wafer-to-wafer alignment) and thermal management. The process considered in study is direct SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /SiO hydrophilic bonding. It shown that, after optimization, lower than 1.5μm misalignment was achieved without significant defects. a second part, modeling done to estimate...
Carbon-doped GeTe is a promising material for use in phase change memories since the addition of C increases stability amorphous phase. By combining x-ray total scattering experiments and ab initio molecular dynamics, we show that carbon deeply modifies structure through long chains tetrahedral triangular units centered on carbon. A clear signature these appearance an additional interatomic distance, around 3.3 Å measured pair distribution function. Besides, first Ge-Ge Ge-Te distances are...
Effects of Ge2Sb2Te5 and GeTe oxidation on their phase-change properties were studied by optical measurements Parallel Angle Resolved X-ray Photoelectron Spectroscopy (PARXPS). The influence oxygen the active material was depicted in order to explain variations properties. surface analysis evidenced a two-steps involving formation germanium antimony oxides then tellurium oxide. A smooth sputtering allowed physically distinguishing different sample overlayer gave information about mechanisms....
In this paper, we investigate the impact of Ge-enrichment coupled to N- or C-doping in Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> based materials on low-resistance state (LRS SET) performance combined with high-resistance (HRS RESET) high-temperature data retention (HTDR) Phase-Change Memories (PCM). These innovative have been integrated state-of-the-art memory cell...
The 3D sequential integration, of active devices requires to limit the thermal budget top tier processing low temperature (LT) (i.e. TTOP=500 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C) in order ensure stability bottom devices. Here we present breakthrough six areas that were previously considered as potential showstoppers for integration from either a manufacturability, reliability, performance or cost point view. Our...
In this paper, we examine the problem of drift low-resistance state (LRS) in phase change memories based on C or N doped and undoped Ge-rich Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> . A novel procedure, named R-SET technique, is proposed to boost SET speed these innovative materials by overcoming decrease crystallization caused enrichment. The technique allows, at same...
An advanced CMOS process has been proposed which include key features: 75 nm gate length damascene metal gate, high-k dielectrics with 1.35 EOT. Detailed characterisation (TEM, C-V, split charge pumping, LF noise, low and high temperature transport) demonstrate the quality of dielectric interface. Low Ioff current make technology attractive for standby power applications.
The commercialization of Phase-Change Memories (PCM), based on the well-known GST compound, have been recently started, tailored for consumer applications. Despite other excellent performances (i.e. low-power, scalability,...), data retention is assured up to 85°C, still limited automotive market segment. Alternative active material able comply with stringent requirements applications should possibly exhibit higher crystallization temperature (T <sub...
In this work, for the first time at our knowledge, improvement of chalcogenide-based CBRAM performance and reliability by Sb doping GeS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> electrolyte is presented. An original analysis, based on in-depth physico-chemical characterization, device electrical measurements, empirical model principle calculations, shown. We argue that optimized ~10% in allows to achieve SET speed 30ns 2.2V (i.e....
In microelectronics technologies, patterning of sub-100nm width ridges capped with a titanium nitride mask can lead to undulations the detrimental performances. This phenomenon is observed highly compressive residual stress into (&gt;2GPa), dielectrics low elastic properties (E&lt;2Gpa) and high dielectric ridge heights (&gt;230nm). Experiments simulations show that originate from buckling which allows release strain energy initially stored in mask. Simulations predict material...
This paper presents several key technologies developed for high density 3D integration by circuit stacking, i.e. with an inter-strata connection pitch lower than 10μm. Direct bonding technology, die-to-wafer self-assembly, wafer thinning process and copper TSV are discussed. 2μm to 5μm large chains presented a resistance <200mΩ. Substrate noise due is also considered TCAD SPICE simulations in order define preliminary design rules.
This work presents a thorough comparative assessment of undoped GST and GeTe active phase-change (PC) materials for application to embedded memory devices (in particular consumer automotive products). The material screening qualification is performed through optical reflectivity 4-probes resistivity measurements. Electrical performances are then investigated tests lance-cell analytical PC cells. Reset current densities comparable, while data-retention at high- temperature significantly...
In situ annealing Raman scattering is used to evidence germanium postcrystallization in the crystalline phase of Ge-rich phase-change GeTe thin films. Both reflectivity and show that crystallization temperature as-deposited amorphous increases with increasing Ge content going from Tc=180 °C (Ge0.5Te0.5) 360 for Ge0.76Te0.24. The crystallized adopts rhombohedral α-GeTe structure, whatever starting composition. For we observe a second characteristic around 375 °C, which signs precipitated...
In this work, we present an experimental and theoretical analysis of scaled (down to 10nm) Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /CuTeGe based CBRAM. We focus on the understanding physical mechanisms responsible for failure high low resistance states at temperature. Using a numerical model combined with ab-initio calculations, elucidate 1 <sup...
We report FDSOI devices with a 20nm gate length (L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</inf> ) and 5nm spacer, featuring 20% tensile strained Silicon-on-Insulator (sSOI) channel NFET 35% [Ge] partially compressive SiGe-on-Insulator (SGOI) PFET. This work represents the first demonstration of strain reversal sSOI by SiGe in short devices. At V xmlns:xlink="http://www.w3.org/1999/xlink">dd</inf> 0.75V, competitive effective current...
A three-dimensional (3D) wafer-to-wafer integration technology has been developed using face-to-face dielectric wafer bonding, followed by thinning and backside interconnect formation. The key technologies required for this include: reliable defect free direct precise alignment, thinning, deep inter-strata via (ISV) formation, patterning alignment across strata. Electrical measurements indicate continuity of ISV chains all but the smallest vias.
Bioluminescence imaging (BLI) allows detection of biological functions in genetically modified cells, bacteria, or animals expressing a luciferase (i.e., firefly, Renilla, aequorin). Given the high sensitivity and minimal toxicity BLI, vivo studies on molecular events can be performed noninvasively living rodents. To date, bioluminescence has required long exposure times that are incompatible with dynamic signaling pathways nonanaesthetised freely moving animals. Here we develop an system...
UTBB FDSOI technology is a faster, cooler and simpler addressing the performance/energy consumption trade-off. In this paper we present main front-end-of-the-line knobs to scale down promising 10nm node.
In this paper, a detailed investigation of the electrical performances Phase-Change Memory test devices integrating carbon-doped Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb Te xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> (named GST-C) is reported. PCM with 5% carbon atomic content yields more than 50% current reduction compared to reference GST devices, programming window widely superior two orders magnitude and cycling...