A5073132527- Magnetic properties of thin films
- Magneto-Optical Properties and Applications
- Physics of Superconductivity and Magnetism
- Magnetic and transport properties of perovskites and related materials
- Magnetic Properties and Applications
- Advanced Memory and Neural Computing
- Quantum and electron transport phenomena
- Characterization and Applications of Magnetic Nanoparticles
- ZnO doping and properties
- Theoretical and Computational Physics
- Magnetic Field Sensors Techniques
- Cultural and Sociopolitical Studies
- History and Cultural Heritage
- Ancient Mediterranean Archaeology and History
- Turkish Literature and Culture
- Linguistics and Cultural Studies
- Advanced Condensed Matter Physics
- Ancient Near East History
- Magnetic confinement fusion research
- Surface and Thin Film Phenomena
- Archaeology and Historical Studies
- Magnetic Properties of Alloys
- Nuclear Physics and Applications
- Metallurgy and Cultural Artifacts
- Neural Networks and Applications
Institut de Ciència de Materials de Barcelona
2021-2025
Universitat Autònoma de Barcelona
2025
Massachusetts Institute of Technology
2016-2023
ETH Zurich
2014-2022
Eindhoven University of Technology
2021
Interface (United States)
2021
Tohoku University
2019
Istanbul University
2015-2017
Middle East Technical University
2016
Institut Català de Nanociència i Nanotecnologia
2012-2014
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization reversal pulses ranging from 180~ps to ms Pt/Co/AlOx dots with lateral dimensions of 90~nm. We characterize the probability critical $I_c$ as function pulse length, amplitude, external field. Our data evidence two distinct regimes: short-time intrinsic regime,...
We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, which thermal gradients produced by Joule heating SOT coexist give rise to ac signals with comparable symmetry magnitude. Based on the field-dependence resistance, we develop a consistent method separate measurements. By addressing first ferromagnet/light bilayers negligible coupling, show that in-plane current injection induces...
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and its read-out using tunnelling magnetoresistance (TMR) effect. The device is composed Ta/FeCoB/MgO/FeCoB stack top Ta current line. bottom FeCoB layer can be switched reproducibly injection pulses with density 5 × 1011 A/m2 in presence an in-plane bias field, leading to full-scale change TMR signal. Our work demonstrates proof concept memory cell.
We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed steps up to 300 degrees C and characterized using x-ray absorption spectroscopy, transmission electron microscopy, resistivity, Hall effect measurements. By performing adiabatic harmonic voltage measurements, we show that transverse (field-like) longitudinal (antidamping-like) are composed constant magnetization-dependent contributions, both...
With recent developments in the field of spintronics, ferromagnetic insulator (FMI) thin films have emerged as an important component spintronic devices. Ferrimagnetic yttrium iron garnet particular is excellent with low Gilbert damping and a Curie temperature well above room temperature, has been incorporated into heterostructures that exhibit plethora phenomena including spin pumping, Seebeck, proximity effects. However, it challenge to develop high quality sub‐10 nm thickness FMI...
Rare-earth iron garnet thin films with perpendicular magnetic anisotropy (PMA) have recently attracted a great deal of attention for spintronic applications. Thulium (TmIG) has been successfully grown and TmIG/Pt heterostructures characterized. However, TmIG is not the only rare-earth that can be PMA. We report growth, magnetic, properties epitaxial terbium (TbIG) europium (EuIG) Reciprocal space mapping shows are lattice matched to substrate without strain relaxation, even up 56 nm thick....
Recent studies evidenced the emergence of asymmetric electron transport in layered conductors owing to interplay between electrical conductivity, magnetization, and spin Hall or Rashba-Edelstein effects. Here, we investigate unidirectional magnetoresistance (UMR) caused by current-induced accumulation Co/Pt CoCr/Pt bilayers. We identify three competing mechanisms underpinning resistance asymmetry, namely, interface bulk spin-dependent scattering electron-magnon scattering. Our measurements...
As spin-transfer-torque magnetic random-access memory finally enters mass production, there is great interest in enhancing performance using write schemes based on spin-orbit torque (SOT), which afford speed, reliability, and CMOS compatibility. A major issue, though, finding materials for heterostructures that yield large SOT, perpendicular anisotropy, low resistivity. So far, only platinum fulfills all of these requirements. The authors find that, despite its relatively atomic number,...
We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM) bilayers in linear and nonlinear (current-dependent) regimes compared it with amplitude spin-orbit torques thermally induced electric fields. Our experiments reveal that heavy NM/Co (NM = Ta, W, Pt) is phenomenologically similar to spin Hall (SMR) YIG/Pt, but has a much larger anisotropy, order 0.5%, which increases atomic number NM. This SMR-like behavior absent light Ti, Cu), present standard AMR expected...
Magnetic domain walls (DWs) are the finite boundaries that separate regions of uniform magnetization in a magnetic material. They constitute key research topic condensed matter physics due to their intriguing and relevance technological applications. A multitude spintronic concepts for memory, logic, data processing applications have been proposed, relying on precise control DWs via fields electric currents. Intensive into has also spurred interest chiral interactions, topology, relativistic...
Current-induced torques originating from earth-abundant 3d elements offer a promising avenue for low-cost and sustainable spintronic memory logic applications. Recently, orbital currents─transverse angular momentum flow in response to an electric field─have been the spotlight since they allow current-induced torque generation transition metals. Here, we report comprehensive study of spin Cu-based magnetic heterostructures. We show that high efficiencies can be achieved engineered Ni80Fe20/Cu...
We demonstrate magnetization switching of a perpendicularly magnetized MgO/Co/Pt trilayer by application an in-plane current and constant magnetic field small amplitude. Switching occurs due to effective torque generated spin-orbit coupling intrinsic the structure. investigate dependence critical on pulse width, showing that reversal in dc limit is assisted thermal fluctuations.
We report fast and efficient current-induced switching of a perpendicular anisotropy magnetic insulator thulium iron garnet by using spin-orbit torques (SOT) from the Pt overlayer. first show that, with quasi-DC (10 ms) current pulses, SOT-induced can be achieved an external field as low 2 Oe, making TmIG outstanding candidate to realize in heterostructures that produce moderate stray fields without requiring field. then demonstrate deterministic pulses (≤20 ns) amplitude ∼1012 A/m2, similar...
We report on the occurrence of strong interlayer Dzyaloshinskii-Moriya interaction (DMI) between an in-plane magnetized Co layer and a perpendicularly TbFe through Pt spacer. The DMI causes chiral coupling that favors one-handed orthogonal magnetic configurations TbFe, which we reveal Hall effect magnetoresistance measurements. mediated by effective fields either up to 10-15 mT, decrease monotonically with increasing thickness. Ru, Ta, Ti spacers mediate significantly smaller compared Pt,...
We report on a memory device concept based the recently discovered unidirectional spin Hall magnetoresistance (USMR), which can store multiple bits of information in single ferromagnetic heterostructure. show that USMR with possible contribution Joule heating-driven magnetothermal effects ferromagnet/normal metal/ferromagnet (FM/NM/FM) trilayers gives rise to four different 2nd harmonic resistance levels corresponding magnetization states (⇉, ⇄, ⇆, ⇇) system be found. Combined possibility...
We report the structural, magnetic, and interfacial spin transport properties of epitaxial terbium iron garnet (TbIG) ultrathin films deposited by magnetron sputtering. High crystallinity was achieved growing on gadolinium gallium substrates either at high temperatures, or room temperature followed thermal annealing, above 750 °C in both cases. The display large perpendicular magnetic anisotropy (PMA) induced compressive strain, tunable structural through growth conditions substrate lattice...
We studied the effect of inserting 0.5-nm-thick spacer layers (Ti, V, Cr, Mo, W) at Pt/Co interface on spin-orbit torques, Hall effect, magnetoresistance, saturation magnetization, and magnetic anisotropy. find that dampinglike torque decreases substantially for all samples with a layer compared to reference bilayer, consistently opposite sign atomic coupling constant elements relative Pt. The reduction is monotonic number isoelectronic $3d,4d$, $5d$ elements, exception V has stronger than...
Nanometer-thin rare-earth iron garnet films with perpendicular magnetic anisotropy are among the most promising materials for fast and low-energy spintronics applications. Here, authors demonstrate ultrafast control of intrinsically stabilized submicrometer bubble domains in these materials. By employing powerful x-ray imaging techniques both transmission surface sensitivity, by combining this nanosecond electrical pulses femtosecond laser excitation, they deterministically create, image,...
Broadband ferromagnetic resonance is used to investigate magnetization dynamics, damping, interfacial spin transport, and perpendicular magnetic anisotropy (PMA) of (111)-oriented epitaxial thin films the ferrimagnetic insulator Tm3Fe5O12 (TmIG) on substrates Gd3Ga5O12. A PMA field ∼162 mT found at 350 K, in temperature range where spin–orbit torque switching was previously reported [Avci et al., Nat. Mater. 16, 309–314 (2017)]. Landé g-factor 1.56 strongly supports large intrinsic coupling...