TiN films with different preferred crystalline orientations have been prepared by a new cathodic arc evaporation technique - filtered deposition (FAD). The evolution of the orientation in was investigated systematically. Three kinds orientation, i.e. (200), (111), and (220) were achieved continuously one procedure varying film thickness substrate bias which determines bombarding energy deposited energetic particles. At initial stage growth, (200) is dominant at lower bias. When becomes...

Recent advances in the study of exchange couplings magnetic films are introduced. To provide a comprehensive understanding coupling, we have designed different bilayers, trilayers and multilayers, such as anisotropic hard-/soft-magnetic multilayer films, ferromagnetic/antiferromagnetic/ferromagnetic trilayers, [Pt/Co]/NiFe/NiO heterostructures, Co/NiO Co/NiO/Fe on an anodic aluminum oxide (AAO) template. The exchange-coupling interaction between soft- hard-magnetic phases, interlayer...

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well large anomalous Hall effect chiral anomaly fermions, have attracted extensive interest. However, all-electrical control such systems at room temperature, crucial step toward practical application, has not been reported. Here, using small writing current density around 5 × 106 A·cm-2, we realize current-induced deterministic switching non-collinear...

Topologically protected magnetic "whirls" such as skyrmions in antiferromagnetic materials have recently attracted extensive interest due to their nontrivial band topology and potential application spintronics. However, room-temperature natural metallic with merit of probable convenient electrical manipulation not been reported. Here, are realized a non-collinear antiferromagnet, Mn3 Sn, capped Pt overlayer. The evolution spin textures from coplanar inverted triangular structures Bloch-type...

Fe3O4 (magnetite) is one of the most elusive quantum materials and at same time studied transition metal oxide for thin film applications. The theoretically expected half-metallic behavior generates high expectations that it can be used in spintronic devices. Yet, despite tremendous amount work devoted to preparing films, enigmatic first order metal-insulator hall mark magnetite known as Verwey transition, films extremely broad occurs substantially lower temperatures compared quality bulk...

Abstract The control of magnetization by electric current is a rapidly developing area motivated strong synergy between breakthrough basic research discoveries and industrial applications in the fields magnetic recording, field sensors, spintronics, nonvolatile memories. In recent years, discovery spin–orbit torque has opened spectrum opportunities to manipulate efficiently. This article presents review historical background literature focusing on torques (SOTs), highlighting most exciting...

Kagome antiferromagnetic semimetals such as Mn3Sn have attracted extensive attention for their potential application in spintronics. Realizing high manipulation of kagome spin states at room temperature can reveal rich emergent phenomena resulting from the quantum interactions between topology, spin, and correlation. Here, we achieved tunable textures through symmetry design by controlling alternate heavy-metal Pt thicknesses. The various topological were predicted with theoretical...

Contributions of acoustical deformation scattering, ion impurity scattering and grain boundary potential to the conductivity TCO films have been calculated in order deduce intrinsic limit regardless precise details preparation procedure. The results indicate that effective mass charge carriers has a strong dependence on carrier concentration. Based correction, as well concentration ionized centre due developed explain upper mobility or lower resistivity films. Two empirical expressions are...

Abstract Spin–orbit torque (SOT) induced perpendicular magnetization switching in Pt 1‐x Gd x /Co/Al 2 O 3 heterostructure with = 0, 0.02, 0.14, 0.30, and 0.33 is investigated. With in‐plane charge current flowing through the layer, field‐free current‐induced observed for all nonzero due to existence of opposite spin Hall angles (θ SHA ) from alloys. Furthermore, large θ about 0.27 obtained optimal 0.70 0.30 alloy films, which four times larger than that pure Pt. This work suggests a simple...

We systematically investigated the manipulation of antiferromagnetic interfacial states through current-induced spin-orbit torques (SOT) in $\mathrm{Pt}/\mathrm{Co}/{\mathrm{Ir}}_{25}{\mathrm{Mn}}_{75}(\mathrm{Ir}\text{\ensuremath{-}}\mathrm{Mn})$ system with varying Ir-Mn or Co thickness. The high tunability states, that spins gradually switched from upward to downward vice versa by SOT, was achieved for samples ${t}_{\mathrm{IrMn}}\ensuremath{\ge}4\mathrm{nm}$, whereas switching ability...

Abstract Spin‐orbit torque (SOT)‐based magnetization switching is a promising candidate for the innovation and developments of spintronic devices. However, necessity an in‐plane magnetic field to induce deterministic obstacle feasibility in practical applications. Here, it shown that field‐free current‐induced perpendicular magnetized Pt 1− x Mo /Co/Ru heterostructure with = 0, 0.04, 0.07, 0.12, 0.17. Applying charge current through layer, device can achieve high‐efficiency competing spin...

Abstract Spin orbit torque (SOT) devices with the advantages of high speed, low power consumption, and stability have wide application prospects in field spintronics. The SOT‐based crossbar array device is an important extension SOT devices, but it not reported so far. Here, all electrical magnetization switching Hall crossings based on realized. Through analyzing current distribution micromagnetic simulations, found that this field‐free comes from asymmetric density gradient at...

We present a hybrid rotational spin torque ferromagnetic resonance (ST-FMR) platform that integrates radio frequency (RF) and direct current (DC). By combining the conductive slip ring technology with conventional ST-FMR system, 360° rotations can be achieved while applying DC up to 600 V/10 A RF sources 40 GHz. The system demonstrates angular stability less than 1% variation in resistance 2% S-parameters. Furthermore, based on platform, heating temperature measurements were through ports,...

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application neuromorphic computing. In this work, we demonstrate plasticity Co/Gd multilayers where binary states induced by spin–orbit toque can be tuned into a multistate one as decreasing domain nucleation barrier. Therefore, perpendicular magnetic anisotropy of and in-plane field. Moreover, used demonstrating spike timing-dependent sigmoid-like activation behavior. This work...

Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential downscaling and decreasing power consumption. Recently, manipulation bulk properties antiferromagnets has been realized by several different approaches. However, interfacial spin order is an important integral part devices, thus, successful control antiferromagnetic spins urgently desired. Here, we report high controllability in antiferromagnetic--ferromagnetic--heavy-metal...

Exchange bias (EB) and magnetic properties of ferrimagnetic (FI) Fe3O4 antiferromagnetic (AFM) Cr2O3 nanocomposites prepared by mechanical alloying have been investigated. A large EB field 2.2 kOe at 10 K is observed in one the nanocomposites, which may be related to uncompensated pinned AFM spins interface between FI phases nanocomposites. The varies with strength cooling content phase, phenomena are explained terms interfacial exchange interaction two phases.

We investigated field-free current-induced perpendicular magnetization switching in Pt/Co/AlOx/Co/Ta structures by varying the thickness of an insulating spacer layer. A spin–orbit torque is realized through antiferromagnetic interlayer exchange coupling (IEC) between bottom and top Co layers or premagnetizing Significant variations magnetic electrical properties are ascribed to dependent IEC changing layer from 1.0 1.9 nm. When 1.6 nm, we found strongest field about 300 Oe optimal...

Pseudo-1–3 magnetostrictive composites consisting of stabilizer (B, Co)-free, light rare earth (Pr)-containing (Tb0.3Dy0.7)1−xPrxFe1.55 (0 ⩽ x 0.4) particles with a size distribution 10–300 µm embedded and aligned in passive epoxy matrix using 0.5 volume fraction are fabricated. The quasistatic magnetomechanical properties the investigated compared their monolithic alloys, as function Pr content x. show similar qualitative trends alloys for all (Tb0.3Dy0.7)0.75Pr0.25Fe1.55 composite alloy...

Non-collinear antiferromagnets with a D019 hexagonal structure have attracted tremendous attention for their potential applications in topological spintronics. Exploring the relationship between spin texture and electronic band is crucial understanding physical nature of these chiral antiferromagnets. Here, we systematically investigated variation non-collinear antiferromagnet Mn3Sn film using magnetic circular dichroism (MCD) spectroscopy. The evolution Mn from coplanar inverted triangular...