The emerging wide varieties of the van der Waals (vdW) magnets with atomically thin and smooth interfaces hold great promise for next-generation spintronic devices. However, due to lower Curie temperature vdW ferromagnets than room temperature, electrically manipulating its magnetization at has not been realized. In this work, it is demonstrated that perpendicular ferromagnet Fe3 GaTe2 can be effectively switched in /Pt bilayer by spin-orbit torques (SOTs) a relatively low current density...

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the semiconductor InSe spacer with ferromagnetic metal Fe3 GeTe2 spin injection detection electrodes, are reported. Two distinct transport behaviors observed: tunneling metallic, which assigned to formation pinhole-free tunnel barrier at /InSe interface pinholes...

We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced spin-orbit torque. The devices were operated without an external magnetic field and controlled by voltages as low 10 V applied across the PMN-PT substrate, which is much lower compared to previous reports (500 V). deterministic smaller voltage was realized from...

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics, as well large anomalous Hall effect chiral anomaly fermions, have attracted extensive interest. However, all-electrical control such systems at room temperature, crucial step toward practical application, has not been reported. Here, using small writing current density around 5 × 106 A·cm-2, we realize current-induced deterministic switching non-collinear...

Topologically protected magnetic "whirls" such as skyrmions in antiferromagnetic materials have recently attracted extensive interest due to their nontrivial band topology and potential application spintronics. However, room-temperature natural metallic with merit of probable convenient electrical manipulation not been reported. Here, are realized a non-collinear antiferromagnet, Mn3 Sn, capped Pt overlayer. The evolution spin textures from coplanar inverted triangular structures Bloch-type...

Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin van der Waals (vdW) materials MTJs is expected to boost their figure merit, the tunneling magnetoresistance (TMR), while relaxing lattice-matching requirements from epitaxial growth supporting high-quality integration dissimilar atomically-sharp...

Kagome antiferromagnetic semimetals such as Mn3Sn have attracted extensive attention for their potential application in spintronics. Realizing high manipulation of kagome spin states at room temperature can reveal rich emergent phenomena resulting from the quantum interactions between topology, spin, and correlation. Here, we achieved tunable textures through symmetry design by controlling alternate heavy-metal Pt thicknesses. The various topological were predicted with theoretical...

We systematically investigated the manipulation of antiferromagnetic interfacial states through current-induced spin-orbit torques (SOT) in $\mathrm{Pt}/\mathrm{Co}/{\mathrm{Ir}}_{25}{\mathrm{Mn}}_{75}(\mathrm{Ir}\text{\ensuremath{-}}\mathrm{Mn})$ system with varying Ir-Mn or Co thickness. The high tunability states, that spins gradually switched from upward to downward vice versa by SOT, was achieved for samples ${t}_{\mathrm{IrMn}}\ensuremath{\ge}4\mathrm{nm}$, whereas switching ability...

ABSTRACT Versatile memory is strongly desired for end users, to protect their information in the era. In particular, bit-level switchable that can be switched from rewritable read-only function would allow users prevent important data being tampered with. However, no such has been reported. We demonstrate converted into by applying a sufficiently large current pulse U-shaped domain-wall memory, which comprises an asymmetric Pt/Co/Ru/AlOx heterostructure with strong Dzyaloshinskii-Moriya...

Abstract Spin orbit torque (SOT) devices with the advantages of high speed, low power consumption, and stability have wide application prospects in field spintronics. The SOT‐based crossbar array device is an important extension SOT devices, but it not reported so far. Here, all electrical magnetization switching Hall crossings based on realized. Through analyzing current distribution micromagnetic simulations, found that this field‐free comes from asymmetric density gradient at...

We present a hybrid rotational spin torque ferromagnetic resonance (ST-FMR) platform that integrates radio frequency (RF) and direct current (DC). By combining the conductive slip ring technology with conventional ST-FMR system, 360° rotations can be achieved while applying DC up to 600 V/10 A RF sources 40 GHz. The system demonstrates angular stability less than 1% variation in resistance 2% S-parameters. Furthermore, based on platform, heating temperature measurements were through ports,...

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application neuromorphic computing. In this work, we demonstrate plasticity Co/Gd multilayers where binary states induced by spin–orbit toque can be tuned into a multistate one as decreasing domain nucleation barrier. Therefore, perpendicular magnetic anisotropy of and in-plane field. Moreover, used demonstrating spike timing-dependent sigmoid-like activation behavior. This work...

Electrical control of spins in magnetic materials and devices is one the most important research topics spintronics. We briefly describe recent progress electrical manipulations magnetization reversal domain wall motion.This review consists three parts:basic concepts,magnetization manipulation by current voltage methods,and future prospects field.The basic concepts,including generation spin current,the interaction between localized magnetization,and dynamic...

We present an alternative mechanism to control domain wall motion, whose directions are manipulated by the amplitude of electrical current rather than its sign when modulating exchange stiffness A while maintaining Dzyaloshinskii-Moriya interaction constant D. To confirm this mechanism, we observe type motion and demonstrate linear magnetic switching without hysteresis effect via adjusting a $\mathrm{Ta}/\mathrm{Pt}/\mathrm{Co}/\mathrm{Ta}$ multilayer device with ion implantations. further...

The electronic orders in kagome materials have emerged as a fertile platform for studying exotic quantum states, and their intertwining with the unique lattice geometry remains elusive. While various unconventional charge broken symmetry is observed, influence of on magnetic order has so far not been directly observed. Here, using high-resolution force microscopy, it is, first time, observed new form noncollinear spin textures ferromagnet zero field. Under sixfold rotational lattice, are...

Spin–orbit torque (SOT)-induced deterministic control of the magnetization in ferromagnets with perpendicular magnetic anisotropy (PMA) is key to next-generation spintronic applications. However, tunability SOT-induced switching still requires further exploration. Here, we investigated angle-dependent interlayer exchange coupling on all-electric a Co/Pt/Co trilayer, where two Co layers exhibit PMA and in-plane anisotropy, respectively. After pre-magnetizing layer, was achieved through...

Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic devices. However, due to lower Curie temperature vdW 2D ferromagnets than room temperature, electrically manipulating its magnetization at has not been realized. In this work, we demonstrate perpendicular ferromagnet Fe3GaTe2 can be effectively switched in Fe3GaTe2/Pt bilayer by spin-orbit torques (SOTs) a relatively low...

Non-collinear antiferromagnets with a D019 hexagonal structure have attracted tremendous attention for their potential applications in topological spintronics. Exploring the relationship between spin texture and electronic band is crucial understanding physical nature of these chiral antiferromagnets. Here, we systematically investigated variation non-collinear antiferromagnet Mn3Sn film using magnetic circular dichroism (MCD) spectroscopy. The evolution Mn from coplanar inverted triangular...

Spin–orbit torque (SOT) efficiencies are systematically investigated in [Pt ( t Pt )/Ru (1− )] 10 /Pt (0.8 nm)/Co multilayer systems with perpendicular magnetic anisotropy and in‐plane anisotropy. A high SOT efficiency is achieved by the optimized Pt‐based structures. The maximum damping‐like ξ DL of 0.31 found multilayers relatively low resistivity (58.8 μΩ cm), which three times larger than that pure layer also significantly n Ru 1− alloy same composition. Considering interface...

Heavy metal (HM) multilayers with opposite spin-Hall angle have attracted extensive attentions due to their rich physical properties and controversial reported results. Here, we systematically investigated the spin-orbit torque (SOT) efficiency in $\mathrm{Ta}(1)/{[\mathrm{Pt}({t}_{\mathrm{Pt}})/\mathrm{Ta}(1\ensuremath{-}{t}_{\mathrm{Pt}})]}_{5}/\mathrm{Pt}(1.3)/\mathrm{Co}$ using harmonic Hall voltage response methods. We observed that SOT of Pt/Ta multilayer can be continuously tuned...

Rapid electron transport triggers many novel physical phenomena and becomes a critical point for high-speed electronics. Two-dimensional gas (2DEG) has drawn great attention due to its high mobility, this been observed in different materials, such as semiconductor, oxide interfaces, 2D materials. In paper, we report, the first time, existence electrical manipulation of 2DEG Schottky quantum well, which was formed titanium thin films. We take asymmetry interface scattering effect into...