A5075277290- Physics of Superconductivity and Magnetism
- Electronic and Structural Properties of Oxides
- Quantum and electron transport phenomena
- Topological Materials and Phenomena
- Nanowire Synthesis and Applications
- Carbon Nanotubes in Composites
- Semiconductor Quantum Structures and Devices
- Advanced Malware Detection Techniques
- Network Security and Intrusion Detection
- Surface and Thin Film Phenomena
- Internet Traffic Analysis and Secure E-voting
- Semiconductor materials and devices
- Photonic Crystal and Fiber Optics
- Advancements in Semiconductor Devices and Circuit Design
- Stochastic processes and financial applications
- Graphene research and applications
- Gyrotron and Vacuum Electronics Research
- Terahertz technology and applications
- Magnetic and transport properties of perovskites and related materials
- Molecular Junctions and Nanostructures
- Distributed and Parallel Computing Systems
- Energy and Environment Impacts
- Additive Manufacturing and 3D Printing Technologies
- Advancements in Photolithography Techniques
- Photonic and Optical Devices
Old Dominion University
2013-2024
Dominion University College
2013-2024
University of Copenhagen
2018-2023
Danish National Metrology Institute
2022-2023
Microsoft (Denmark)
2019-2022
DHI
2022
William & Mary
2022
Bangladesh University of Business and Technology
2019
Aalto University
2017-2018
Lund University
2018
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to information applications has been challenging. Here, we study the of selective area growth by molecular beam epitaxy InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and strong enhancement field effect mobility. We show possess...
In floating catalyst chemical vapor deposition (FC-CVD), tuning chirality distribution and obtaining narrow of single-walled carbon nanotubes (SWCNTs) is challenging. Herein, by introducing various amount CO2 in FC-CVD using CO as a source, we have succeeded directly synthesizing SWCNT films with tunable well colors. particular, 0.25 0.37 volume percent CO2, the display green brown colors, respectively. We ascribed colors to suitable diameter SWCNTs. Additionally, optimizing reactor...
Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing the design of heterostructures with complex material combinations and geometries. In this work we report epitaxy freestanding vapor–liquid–solid grown in-plane selective area semiconductor–ferromagnetic insulator–superconductor (InAs/EuS/Al) nanowire heterostructures. We study crystal matching wurtzite zinc-blende InAs/rock-salt EuS interfaces well rock-salt EuS/face-centered cubic Al...
Hybrid semiconductor-superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low dimensionality crystal structure flexibility facilitate unique heterostructure growth efficient material optimization, crucial prerequisites accurately constructing complex multicomponent quantum materials. Here, we present an extensive study Sn on InSb, InAsSb, InAs demonstrate how drives formation either semimetallic...
In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl2 adsorption and removal the modified low energy Ar plasma exposure a standard reactive ion system. The feasibility reproducibility process are demonstrated patterning films ALE photoresist as an etch mask. deemed to be useful for fabrication nanoscale structures high electron mobility transistors expected adoptable other materials.
Gate-tunable junctions are key elements in quantum devices based on hybrid semiconductor–superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations gatemon and topological qubits. Common all is that junction transparency plays a critical role. In this study, we grow single-crystalline InAs, InSb, InAs1–xSbx semiconductor nanowires with epitaxial Al, Sn, Pb superconductors situ shadowed single-step molecular beam...
We investigate an electron transport blockade regime in which a spin triplet localized the path of current is forbidden from entering spin-singlet superconductor. To stabilize triplet, double quantum dot created electrostatically near superconducting Al lead InAs nanowire. The closest to normal exhibits Coulomb diamonds, and Andreev bound states induced gap. experimental observations compare favorably theoretical model blockade, named so because configuration suppresses reflections. Observed...
Abstract Optimized geometry of single‐walled carbon nanotubes (SWCNTs) is vital to high‐performance transparent conductive films (TCFs). Herein, the SWCNTs, i.e., tube diameter, bundle length, and are successfully tuned by introducing dioxide (CO 2 ) into floating catalyst chemical vapor deposition (FC‐CVD), where monoxide (CO) used as a source ferrocene precursor. Both diameter length increase with an increment CO concentration, yield SWCNTs can be significantly promoted appropriate amount...
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of InAs/EuS analyze the atomic-scale structure characteristics. The Fermi level at interface is found be close InAs conduction band in gap EuS, thus preserving semiconducting properties. Both neutron X-ray reflectivity measurements show that overall...
The current investigation explores the surface effects of quasiatomic layer etching (Q-ALE) silicon (Si), focusing on interplay process parameters, such as Ar+ ion energy, and their impact etch rate, roughness, material damage. Using a chlorine-based reactive tool at varying radio frequency bias voltages, energy distribution characteristics were systematically analyzed. Experimental results demonstrate existence an ALE window 50–70 eV peak achieving etch-per-cycle ∼0.12 nm with minimum...
Transparent and conductive films (TCFs) are of great technological importance. Their high transmittance, electrical conductivity, mechanical strength make single-walled carbon nanotubes (SWCNTs) a good candidate for the raw material TCFs. Despite ballistic transport in individual SWCNTs, conductivity SWCNT networks is limited by low efficiency charge tunneling between tube elements. Here, we demonstrate that nanotube network sheet resistance at optical transmittance decreased more than 50%...
Abstract By studying the time‐dependent axial and radial growth of InSb nanowires (NWs), conditions for synthesis single‐crystalline nanocrosses (NCs) by molecular beam epitaxy are mapped. Low‐temperature electrical measurements NC devices with local gate control on individual terminals exhibit quantized conductance used to probe spatial distribution conducting channels. Tuning a situation where junction is connected few‐channel quantum point contacts in connecting NW terminals, it shown...
Carbon nanotube is being considered as a prospective alternative for the existing Silicon technology in present days. The advancement of technology, at present, has slowed down considerably because its various material issues and scaling limitations so, carbon nanotubes have gained attention researchers around world over. In this literature, effect change dielectric constant gate on performance field transistor (CNTFET) with non-ballistic conduction extensively investigated. It found study...
Carbon nanotube is being considered as a prospective alternative for the existing Silicon technology in present days. The advancement of technology, at present, has slowed down considerably because its various material issues and scaling limitations so, carbon nanotubes have gained attention researchers around world over. In this literature, effect gate oxide thickness on performance field transistor (CNTFET) with non-ballistic conduction extensively investigated. It found study that...
In this paper, a genetic algorithm-based optimization is used to simultaneously minimize two competing objectives guiding the operation of Jefferson Lab's Continuous Electron Beam Accelerator Facility linacs: cavity heat load and radio frequency trip rates. The results represent significant improvement standard linac energy management tool thereby could lead more efficient configuration. This study also serves as proof principle how algorithm can be for optimizing other linac-based machines.
Nanoimprint lithography (NIL) has the potential for low-cost and high-throughput nanoscale fabrication. However, NIL quality resolution are usually limited by shape size of nanoimprint stamp features. Atomic layer etching (ALE) can provide a damage-free pattern transfer with ultimate etch control features all length scales, down to atomic scale, feature geometries, which is required good high-resolution Here, we present an ALE process preparation. This based on chemical adsorption monoatomic...
As a result of this reported research, simulation model to analyse the behaviour carbon nanotube field effect transistors (CNTFETs) under non‐ballistic conditions is explained and gate dielectric on performance CNTFETs has been explored in detail. For first time, thorough study combined conducted output device analysed. It observed that material with high constant leads higher on‐state current off state ratio. In addition, transconductance, total capacitance, charging energy, subthreshold...
We present a report on hybrid InSb–Pb nanowires that combine high spin–orbit coupling with critical field and large superconducting gap. Material characterization indicates the Pb layer of crystal quality nanowire side facets. Hard induced gaps gate-tunable supercurrent are observed in nanowires. These results showcase promising potential this material combination for diverse range applications quantum transport devices.
Bangladesh has seen a proliferation of Solar Home System (SHS) in Off-grid areas as substitute for grid electricity. Along with the demand, supply low quality SHS components is increasing resulting decreased efficiency and adverse effect on country's economy. In this case standard testing methods can help us verify markets thus increase reliability whole system. This paper discusses about qualification procedure, its necessity prospective. Here we present procedures used to determine whether...
As the number of IoT devices has increased rapidly, botnets have exploited vulnerabilities devices. However, it is still challenging to detect initial intrusion on prior massive attacks. Recent studies utilized power side-channel in-formation identify this behavior but lack accurate models in real-time for ubiquitous botnet detection. We propose first online detection system called DeepAuditor multiple via auditing. To de-velop system, we a lightweight auditing device Power Auditor. also...
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for design and interpretation experiments based on hybrid quantum devices. In this letter, gate-dependent surface accumulation layer half-shell InAsSb/Al studied by means Andreev interference a parallel magnetic field. Both uniform devices featuring short Josephson junction fabricated shadow lithography, exhibit periodic modulation switching current. The period...
Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study novel physics and development new technologies. Understanding origin energy spectrum such is therefore crucial goal. Here, we Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices gate-tunable supercurrents at low temperatures multiple Andreev reflections (MARs) finite voltage bias. Under microwave irradiation, photon-assisted tunneling (PAT) MARs produces...