A5059067053- Magnetic properties of thin films
- ZnO doping and properties
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Magnetic Properties and Applications
- Multiferroics and related materials
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Magnetic and transport properties of perovskites and related materials
- Integrated Circuits and Semiconductor Failure Analysis
- Physics of Superconductivity and Magnetism
- Analog and Mixed-Signal Circuit Design
- Electronic and Structural Properties of Oxides
- Advancements in PLL and VCO Technologies
- Low-power high-performance VLSI design
- Semiconductor materials and interfaces
- Quantum, superfluid, helium dynamics
- Magnetic Field Sensors Techniques
- Semiconductor Lasers and Optical Devices
- Graphene research and applications
- Induction Heating and Inverter Technology
- Advancements in Semiconductor Devices and Circuit Design
- Neural Networks and Applications
- Radiation Effects in Electronics
- Surface and Thin Film Phenomena
Korea Institute of Science and Technology
2025
Seoul National University
2015-2022
Korea Advanced Institute of Science and Technology
2014-2018
The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability the manipulation of magnetization direction via in-plane current. This implies existence an inverse effect, which conductivity such should depend orientation. In this work, we report a systematic study magnetoresistance (MR) W/CoFeB/MgO and its correlation with current-induced torque magnetization. We observe that MR is independent angle...
Physical unclonable function (PUFs) utilize inherent random physical variations of solid-state devices and are a core ingredient hardware security primitives. PUFs promise more robust information than that provided by the conventional software-based approaches. While silicon- memristor-based advancing, their reliability scalability require further improvements. These currently limited output fluctuations associated additional peripherals. Here, highly reliable spintronic exploit field-free...
Current-induced magnetization switching through spin–orbit torque (SOT) enables low-energy and high-speed of magnetic memory (MRAM), positioning SOT-MRAM as a promising candidate for next-generation technology. As energy consumption in data computation has become major challenge the 21st century, significant efforts have been dedicated to developing energy-efficient devices. To optimize efficiency, achieving high spin Hall angle (SHA) regarded essential, SHA indicates efficient current...
The electric-field control of magnetic anisotropy is particular interest because it allows the manipulation magnetization direction in spintronic devices with high performance and low power consumption. In this work, we investigate effect an electric field on Ta/Pt/CoFeB/MgO structures, whose easy axis canted from z-axis, forming a cone state. When applied to sample, its constants change, thus modulating It demonstrated that angle controlled between 22° 32° by bias 4 MV/cm can persist even...
In this paper, we report the alleviation of Fermi-level pinning on metal/n-germanium (Ge) contact by insertion multiple layers single-layer graphene (SLG) at metal/n-Ge interface. A decrease in Schottky barrier height with an increase number inserted SLG was observed, which supports contention that originates from metal-induced gap states The modulation varying (m) can bring about use Ge as next-generation complementary metal-oxide-semiconductor material. Furthermore, be used tunnel for spin...
In this letter, we discuss the mechanism of Schottky barrier height (SBH) modulation TaN/Ge contact by varying nitrogen concentration in TaN. The Fermi level, which is strongly pinned near valence band edge Ge, moves to conduction Ge with higher reactive sputtered This SBH attributed presence an electric dipole induced Ge-N bonds at interface contact. due semiconductor-nitrogen not specific TaN/Ge, but rather a general feature various transition-metal nitride systems on semiconductors.
Spin-orbit torque (SOT) originates from the spin-orbit interaction of non-magnetic heavy metals (HMs), allowing for an electrical manipulation perpendicular magnetization in HM/ferromagnet (FM)/oxide structures. In this paper, we experimentally demonstrate SOT-induced switching two FM bits addressed with a single write line. We fabricate device consisting perpendicularly magnetized Ta/CoFeB/MgO structures common Ta underlayer, which directions could be concurrently controlled by injecting...
We study the perpendicular magnetic anisotropy (PMA) of CoFeB/MgO bilayers in contact with W, Ta, IrMn and Ti which has been suggested as spin-orbit-torque-related underlayers. The saturation magnetization CoFeB depends on underlayer materials due to formation a dead-layer, affecting PMA strength each film. x-ray circular dichroism measurement reveals that interfacial intermixing suppresses only orbital moment Fe, while simultaneously both in-plane moments Co.
We report the working principle of a spin-torque oscillator, which frequency is efficiently controlled by manipulating magnetostrictive anisotropy. To justify scheme, we simulate conventional magnetic-tunnel junction-based oscillator fabricated on piezoelectric material. By applying mechanical stress to free layer using material, oscillation can be ensure broad tuning range without significant reduction dynamic resistance variation. Such controllability, appears in absence an external...
Abstract We investigate the temperature dependence of spin Hall magnetoresistance (SMR) in a W/CoFeB bilayer. The SMR is found to increase with decreasing temperature. An analysis based on theory suggests that angle W and/or polarization CoFeB can be origin SMR. also find diffusion length and resistivity do not significantly vary temperature, which indicates necessity further study electron transport mechanism films reveal effect W.
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation June-Young Park, Seung-heon Chris Baek, Seung-Young Younghun Jo, Byong-Guk Park; Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts. Appl. Phys. Lett. 2 November 2015; 107 (18): 182407. https://doi.org/10.1063/1.4935090 Download citation file: Ris (Zotero) Reference...
This paper presents a field-programmable mixed-signal IC named CHIMERA, for low-cost and rapid prototyping of systems. The proposed implements analog functions with time-domain configurable blocks (TCABs). A single TCAB can be programmed to various circuits, including time-to-digital converter, digitally-controlled oscillator, delay cell, digital pulse-width modulator, phase interpolator. TCABs convey process information using the frequency, pulse width, delay, or pulses sequences, rather...
Abstract The sputter-deposited fcc-MgO (001)[100]/bcc-Co 40 Fe B 20 (001)[110] spin-tunnel contact (STC) was successfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 Å) Mg insertion at interface between n-Ge and MgO plays an important role in spin injection into Ge. significantly amplified accumulation observed this STC as a result of structural modification. three-terminal Hanle signal 2.7 times larger than without insertion. Our study confirms...
A field-programmable mixed-signal IC for fast-prototyping and low-cost production of system is presented. The contains time-domain configurable analog blocks (TCABs) that can be programmed into a time-to-digital converter (TDC), digitally controlled oscillator (DCO), delay element, digital pulse-width modulator (DPWM), or phase interpolator (PI). prototype fabricated in 65-nm CMOS demonstrates its versatile programmability with the successful operations as 1-GHz PLL 12.3-ps <sub...
The accurate characterization of highly leaky dielectrics has been a serious challenge in MOSFET and capacitor studies. We have shown that time domain reflectometry (TDR) can be used to measure the capacitance ultrathin SiO2 MOS capacitors even at leakage current density as high ~3000 A/cm2, which is approximately 103 times higher than limit conventional impedance analyzer. extremely short interaction TDR C–V method makes measurement more immune current. Since does not require special...
The spin-orbit interaction in heavy metal/ferromagnet/oxide structures has been extensively investigated because it can be employed manipulation of the magnetization direction by in-plane current. This implies existence an inverse effect, which conductivity such should depend on orientation. In this work, we report a systematic study magnetoresistance (MR) W/CoFeB/MgO and its correlation to current-induced torque magnetization. We observe that MR is independent angle between current...
This paper presents the design of a low-power, low area 256-radix 16-bit crossbar switch employing 2D Hyper-X network topology. The realizes high radix 256 by hierarchically combining set 4-radix sub-switches and applies three modifications to basic topology in order mitigate adverse scaling power consumption propagation delay with increasing radix. For instance, restricting directions which signals can be routed, ports connected, replacing column-wise routes diagonal routes, fanout each...
A mechanism for large range frequency tuning in in-plane spin torque oscillator is suggested and supported by the macrospin simulation. With magnetostrictive anisotropy controlled stress induced from PZT, center of shifts 2-5 GHz range.