Hae Yeon Lee

ORCID: 0000-0003-2712-0726
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About
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Research Areas
  • 2D Materials and Applications
  • Graphene research and applications
  • Magnetic properties of thin films
  • Magnetic and transport properties of perovskites and related materials
  • Quantum and electron transport phenomena
  • Perovskite Materials and Applications
  • ZnO doping and properties
  • Nanowire Synthesis and Applications
  • Magnetic Properties of Alloys
  • Topological Materials and Phenomena
  • MXene and MAX Phase Materials
  • Quantum Dots Synthesis And Properties
  • Metal and Thin Film Mechanics
  • Plasmonic and Surface Plasmon Research
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Electron Microscopy Techniques and Applications
  • Advancements in Battery Materials
  • Advanced biosensing and bioanalysis techniques
  • Luminescence and Fluorescent Materials
  • Force Microscopy Techniques and Applications
  • Diamond and Carbon-based Materials Research
  • Ga2O3 and related materials
  • Carbon Nanotubes in Composites
  • Copper Interconnects and Reliability
  • Multiferroics and related materials

Columbia University
2024-2025

Massachusetts Institute of Technology
2020-2023

Seoul National University
2010-2022

Korea Advanced Institute of Science and Technology
2015-2016

Abstract The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control electric and thermal conductivities, which may further remove obstacles for this technology be realized. thermoelectricity FM/non-magnet (NM) heterostructures using an optical heating source is studied as function NM number multilayers. It observed that the overall signal those structures contributed by spin Seebeck effect anomalous Nernst (ANE)...

10.1038/srep10249 article EN cc-by Scientific Reports 2015-05-28

Control of materials properties has been the driving force modern technologies. So far, have modulated by their composition, structure, and size. Here, using cathodoluminescence in a scanning transmission electron microscope, we show that optical stacked, >100 nm thick hexagonal boron nitride (hBN) films can be continuously tuned relative twist angles. Due to formation moiré superlattice between two interface layers twisted films, new sub-band gap is formed with decreasing magnitude as...

10.1021/acs.nanolett.0c04924 article EN Nano Letters 2021-02-16

Structural, electronic, and chemical nanoscale modifications of transition metal dichalcogenide monolayers alter their optical properties. A key missing element for complete control is a direct spatial correlation response to due the large gap in resolution between spectroscopy nanometer-resolved techniques. Here, we bridge this by obtaining properties using electron at cryogenic temperatures, specifically energy loss absorption cathodoluminescence emission, which are then directly...

10.1021/acs.nanolett.1c02600 article EN Nano Letters 2021-12-08

Understanding structure at the interface between two-dimensional (2D) materials and 3D metals is crucial for designing novel 2D/3D heterostructures improving performance of many 2D material devices. Here, we quantify discuss morphology in several systems. We first deposit facetted Au nanoislands on graphene transition metal dichalcogenides, using measurements equilibrium island shape to determine values 2D/Au energies examining role surface reconstructions, chemical identity, defects grown...

10.1021/acs.nanolett.2c01682 article EN Nano Letters 2022-07-19

Extraordinary optoelectronic properties of van der Waals (vdW) heterostructures can be tuned via strain caused by mechanical deformation. Here, we demonstrate strong and localized luminescence in the ultraviolet region from interface bubbles between stacked multilayers hexagonal boron nitride (hBN). Compared to monolayers, formed stacking vdW show distinct behavior. We use this behavior elucidate radius- thickness-dependent bubble geometry resulting across bubble, which establish bending...

10.1038/s41467-022-32708-z article EN cc-by Nature Communications 2022-08-25

The defect emission from h-BN at 1.55 eV is interesting as it enables optical readout of spins. It necessary to identify the nature relevant point defects for its controlled introduction. However, challenging engineer in without changing local atomic structure. Here, we controllably introduce boron vacancies using an ultrahigh spatial resolution and low-energy He+ ion beam. By optimizing irradiation conditions, control quantity location spatially along depth achieve a robust...

10.1021/acs.nanolett.3c03113 article EN Nano Letters 2023-11-06

We demonstrate a technique for the fabrication of p-type transistors based on monolayer molybdenum telluride (MoTe2). In device structure, hexagonal boron nitride (hBN) protects channel from oxidation and acts as tunnel barrier Pd contacts. P-doping is achieved through charge transfer oxidized WSe2. The contacts show low resistance Ohmic behavior down to cryogenic temperatures. resulting FET mobility highest reported date MoTe2. This architecture can be utilized electronic optoelectronic...

10.1021/acs.jpcc.4c08418 article EN The Journal of Physical Chemistry C 2025-01-23

Abstract The combination of imaging with electrochemical quantification in liquid cell transmission electron microscopy (TEM) provides opportunities for visualizing material processes good spatial and temporal resolution a way that is inaccessible bench‐top experiments. electrode used TEM determines the reliability consistency measurements also influences when on electrode. Here, arising from use 2D materials electrochemistry are explored. Through modeling, it demonstrated graphene...

10.1002/adfm.202104628 article EN Advanced Functional Materials 2021-08-08

Establishing reliable electrical contacts to atomically thin materials is a prerequisite for both fundamental studies and applications yet remains challenge. In particular, the development of contact techniques air-sensitive monolayers has lagged behind, despite their unique properties significant potential applications. Here, we present robust method create device layers encapsulated within hexagonal boron nitride (hBN). This uses plasma etching metal deposition 'vias' in hBN with graphene...

10.1021/acsnano.4c03736 article EN ACS Nano 2024-06-19

The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control electric and thermal conductivities, which may further remove obstacles for this technology be realized. thermoelectricity FM/non-magnet (NM) heterostructures using an optical heating source is studied as function NM number multilayers. It observed that the overall signal those structures contributed by spin Seebeck effect anomalous Nernst (ANE) enhanced...

10.48550/arxiv.1504.00642 preprint EN other-oa arXiv (Cornell University) 2015-01-01

Understanding structure at the interface between two-dimensional (2D) materials and 3D metals is crucial for designing novel 2D/3D heterostructures improving performance of many 2D material devices. Here, we quantify discuss morphology in several systems. We first deposit facetted Au nanoislands on graphene transition metal dichalcogenides, using measurements equilibrium island shape to determine values 2D/Au energies examining role surface reconstructions, chemical identity, defects grown...

10.48550/arxiv.2201.02142 preprint EN cc-by arXiv (Cornell University) 2022-01-01

We introduce three-dimensional (3D) interdigitated electrode array (IDA), which is a pair of IDAs on the ceiling and bottom in microfluidic channel. The comprise Indium tin oxide (ITO) microband electrodes that are alternatively biased. ITO based IDA can be easily precisely patterned using conventional etching process to integrated single microchannel very small volume liquid sample enough fill. Correspondingly requiring extremely amount sample, proposed strategy offers great opportunity for...

10.1149/ma2022-01532199mtgabs article EN Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) 2022-07-07

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10.1017/s1431927621000751 article EN Microscopy and Microanalysis 2021-07-30

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10.1017/s1431927621001069 article EN Microscopy and Microanalysis 2021-07-30
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